Resist underlayer film formation composition and method for forming resist pattern using the same

Patent metadata

Field	Value
Publication number	US-2016238936-A1
Application number	US-201415023823-A
Country	US
Kind code	A1
Filing date	Sep 22, 2014
Priority date	Sep 27, 2013
Publication date	Aug 18, 2016
Grant date	—

Abstract

A novel resist underlayer film formation composition for lithography includes: a polymer having a structure of Formula (1) at a terminal of a polymer chain; a cross-linking agent; a compound promoting a cross-linking reaction; and an organic solvent:

(where R 1 , R 2 , and R 3 are each independently a hydrogen atom, a linear or branched C 1-13 alkyl group, a halogeno group, or a hydroxy group; at least one of R 1 , R 2 , and R 3 is the alkyl group; Ar is a benzene ring, a naphthalene ring, or an anthracene ring; two carbonyl groups are bonded to respective two adjacent carbon atoms of Ar; and X is a linear or branched C 1-6 alkyl group optionally having a C 1-3 alkoxy group as a substituent).

First claim

1 . A resist underlayer film formation composition for lithography comprising:
a polymer having a structure of Formula (1) at a terminal of a polymer chain; a cross-linking agent; a compound promoting a cross-linking reaction; and an organic solvent:

(where R 1 , R 2 , and R 3 are each independently a hydrogen atom, a linear or branched C 1-13 alkyl group, a halogeno group, or a hydroxy group; at least one of R 1 , R 2 , and R 3 is the alkyl group; Ar is a benzene ring, a naphthalene ring, or an anthracene ring; two carbonyl groups are bonded to respective two adjacent carbon atoms of Ar; and X is a linear or branched C 1-6 alkyl group optionally having a C 1-3 alkoxy group as a substituent).

2 . The resist underlayer film formation composition for lithography according to claim 1 , wherein the polymer is a reaction product of material monomers containing a compound of Formula (1a) and a compound of Formula (1b):

(where R 1 , R 2 , R 3 , Ar, and X mean the same as those of Formula (1)).

3 . The resist underlayer film formation composition for lithography according to claim 1 , wherein the polymer has structural units of Formula (2) and Formula (3):

(where Q 1 and Q 2 are each independently a divalent group having a linear or branched C 1-13 hydrocarbon group, a divalent group having an alicyclic hydrocarbon group, a divalent group having an aromatic ring, or a divalent group having a heterocycle including 1 to 3 nitrogen atoms; and the hydrocarbon group, the alicyclic hydrocarbon group, the aromatic ring, and the heterocycle optionally have at least one substituent).

4 . The resist underlayer film formation composition for lithography according to claim 3 , wherein the structural unit of Formula (2) is represented by Formula (2′):

(where Q 3 is a linear or branched C 1-13 hydrocarbon group, a divalent group having an alicyclic hydrocarbon group, or a divalent group having an aromatic ring; the hydrocarbon group, the alicyclic hydrocarbon group, and the aromatic ring optionally have at least one substituent; and two v are each independently 0 or 1).

5 . The resist underlayer film formation composition for lithography according to claim 3 , wherein the structural unit of Formula (3) is represented by Formula (3′):

(where Q 4 is a linear or branched C 1-13 hydrocarbon group, an alicyclic hydrocarbon group, or an aromatic ring; the hydrocarbon group, the alicyclic hydrocarbon group, and the aromatic ring optionally have at least one substituent; the hydrocarbon group optionally has one or two sulfur atoms and optionally has a double bond in a main chain of the hydrocarbon group; and two w are each independently 0 or 1).

6 . The resist underlayer film formation composition for lithography according to claim 3 , wherein the polymer is represented by Formula (4):

(where R 1 , R 2 , R 3 , Ar, and X mean the same as those of Formula (1); and Y is a polymer chain having the structural units of Formula (2) and Formula (3)).

7 . The resist underlayer film formation composition for lithography according to claim 1 , wherein the polymer has a weight-average molecular weight of 1,000 to 100,000.

8 . The resist underlayer film formation composition for lithography according to claim 1 , wherein the organic solvent is one solvent or a combination of two or more solvents selected from the group consisting of propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, 1-ethoxy-2-propanol, ethyl lactate, butyl lactate, and cyclohexanone.

9 . The resist underlayer film formation composition for lithography according to claim 1 , further comprising an acid generator.

10 . A method for forming a resist pattern, the method comprising steps of:
applying the resist underlayer film formation composition for lithography as claimed in claim 1 onto a semiconductor substrate and baking the composition to form a resist underlayer film having a thickness of 1 nm to 20 nm; forming a resist film on the resist underlayer film; exposing the semiconductor substrate coated with the resist underlayer film and the resist film to radiation selected from the group consisting of a KrF excimer laser, an ArF excimer laser, extreme-ultraviolet rays, and electron beams; and developing the substrate with an alkaline liquid developer after the exposure.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Nishita Tokio
• Ohnishi Ryuji
• Fujitani Noriaki
• Sakamoto Rikimaru

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• G03F7/11 Primary

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F7/091

  characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title

• C08G59/308

  containing halogen atoms · CPC title