Group 13 selenide nanoparticles
US-9359202-B2 · Jun 7, 2016 · US
US2016233373A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016233373-A1 |
| Application number | US-201615099282-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 14, 2016 |
| Priority date | Jul 9, 2012 |
| Publication date | Aug 11, 2016 |
| Grant date | — |
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A method of preparing Group XIII selenide nanoparticles comprises reacting a Group XIII ion source with a selenol compound. The nanoparticles have an M x Se y Semiconductor core (where M is In or Ga) and an organic capping ligand attached to the core via a carbon-selenium bond. The selenol provides a source of selenium for incorporation into the semiconductor core and also provides the organic capping ligand. The nanoparticles are particularly suitable for solution-based methods of preparing semiconductor films.
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What is claimed is: 1 . A method of forming a semiconductor film, the method comprising: co-depositing CuSe nanoparticles and Group 13 selenide nanoparticles on a substrate; and, heating the substrate to a temperature sufficient to melt the CuSe nanoparticles and the Group 13 selenide nanoparticles; wherein the Group 13 selenide nanoparticles comprise a Group 13 selenide semiconductor and an organic capping ligand bound to the nanoparticle by a carbon-selenium covalent bond and, wherein the temperature is sufficient to remove the organic capping ligand. 2 . The method of claim 1 wherein the organic capping ligand is an alkyl, alkenyl, alkynyl, or aryl group. 3 . The method of claim 1 wherein the semiconductor film is substantially free of sulfur. 4 . The method of claim 1 wherein the Group 13 selenide nanoparticles are prepared by a method comprising: reacting a Group 13 ion precursor with a selenol compound. 5 . The method of claim 4 wherein the Group 13 ion precursor is a chloride, acetate, or acetylacetonate of a Group 13 element. 6 . The method of claim 4 wherein the Group 13 ion precursor is selected from the group consisting of InCl 3 , In(OAc) 3 , In(acac) 3 , GaCl 3 , Ga(OAc) 3 and Ga(acac) 3 . 7 . The method of claim 4 wherein the selenol compound is an alkyl, alkenyl, alkynyl, or aryl selenol. 8 . The method of claim 4 wherein the selenol compound contains 4 to 14 carbon atoms. 9 . The method of claim 4 wherein the selenol compound is octane selenol. 10 . The method of claim 4 further comprising adding a second selenium compound to the Group 13 ion precursor. 11 . The method of claim 10 wherein the second selenium compound is a trioctylphosphine selenide. 12 . The method of claim 4 wherein the selenide nanoparticles have diameters less than about 200 nm. 13 . The method of claim 4 wherein the selenide nanoparticles have diameters of about 2 to about 100 nm. 14 . The method of claim 4 wherein the selenide nanoparticles have diameters less than about 10 nm.
Nanoparticles · CPC title
being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title
using solutions · CPC title
Quantum dots · CPC title
comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS] · CPC title
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