Nanocrystals containing CdTe core with CdS and ZnS coatings
US-9202867-B2 · Dec 1, 2015 · US
US9359202B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9359202-B2 |
| Application number | US-201313935942-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 5, 2013 |
| Priority date | Jul 9, 2012 |
| Publication date | Jun 7, 2016 |
| Grant date | Jun 7, 2016 |
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A method of preparing Group XIII selenide nanoparticles comprises reacting a Group XIII ion source with a selenol compound. The nanoparticles have an M x Se y semiconductor core (where M is In or Ga) and an organic capping ligand attached to the core via a carbon-selenium bond. The selenol provides a source of selenium for incorporation into the semiconductor core and also provides the organic capping ligand. The nanoparticles are particularly suitable for solution-based methods of preparing semiconductor films.
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What is claimed is: 1. A method of producing Group 13 selenide nanoparticles, the method comprising: reacting a Group 13 ion precursor with a selenol compound. 2. The method of claim 1 , wherein the Group 13 ion precursor is a chloride, acetate, or acetylacetonate of a Group 13 element. 3. The method of claim 1 , wherein the Group 13 ion precursor is selected from the group consisting of InCl 3 , In(OAc) 3 , In(acac) 3 , GaCl 3 , Ga(OAc) 3 and Ga(acac) 3 . 4. The method of claim 1 , wherein the selenol is an alkyl, alkenyl, alkynyl, or aryl selenol. 5. The method of claim 1 , wherein the selenol contains 4 to 14 carbon atoms. 6. The method of claim 1 , wherein the selenol compound is octane selenol. 7. The method of claim 1 , further comprising adding a second selenium compound to the Group 13 ion precursor. 8. The method of claim 7 , wherein the second selenium source is a trioctylphosphine selenide. 9. The method of claim 1 , wherein the nanoparticles have diameters below about 200 nm. 10. The method of claim 1 , wherein the nanoparticles have diameters of about 2 to about 100 nm. 11. The method of claim 1 , wherein the nanoparticles have diameters less than about 10 nm. 12. Group 13 selenide nanoparticles prepared by a method comprising: reacting a Group 13 ion precursor with a selenol compound. 13. A composition comprising: a nanoparticle comprising a core and an organic capping ligand, wherein the core comprises a Group 13 selenide semiconductor and wherein the organic capping ligand is bound to the nanoparticle by a carbon-selenium covalent bond. 14. The nanoparticle of claim 13 , wherein the organic capping ligand is an alkyl, alkenyl, alkynyl, or aryl group. 15. The nanoparticle of claim 13 , wherein the organic capping ligand contains 8 to 12 carbon atoms. 16. A method of forming a semiconductor film, the method comprising: co-depositing CuSe nanoparticles and Group 13 selenide nanoparticles on a substrate, and heating the substrate to a temperature sufficient to melt the CuSe nanoparticles and the Group 13 selenide nanoparticles; wherein the Group 13 selenide nanoparticles comprise a Group 13 selenide semiconductor and an organic capping ligand bound to the nanoparticle by a carbon-selenium covalent bond and wherein the temperature is sufficient to remove the organic capping ligand. 17. The method of claim 16 , wherein the organic capping ligand is an alkyl, alkenyl, alkynyl, or aryl group. 18. The method of claim 16 , wherein the semiconductor film is substantially free of sulfur.
Nanoparticles · CPC title
being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title
using solutions · CPC title
Quantum dots · CPC title
comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS] · CPC title
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