Semiconductor device

Patent metadata

Field	Value
Publication number	US-2016233171-A1
Application number	US-201514985379-A
Country	US
Kind code	A1
Filing date	Dec 30, 2015
Priority date	Feb 6, 2015
Publication date	Aug 11, 2016
Grant date	—

Abstract

Provided is a semiconductor device including an interconnection structure provided on a cell region of a substrate to include a first line and a second line sequentially stacked on the substrate, and a defect detection structure provided on a peripheral region of the substrate to include first and second defect detection lines provided at the same levels as those of the first and second lines, respectively.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a substrate including a cell region and a peripheral region; an interconnection structure on the cell region to include a first line and a second line sequentially stacked on the substrate; and a defect detection structure on the peripheral region to include a first defect detection line and a second defect detection line provided at the same levels as those of the first and second lines, respectively.

2 . The device of claim 1 , wherein the interconnection structure further comprises a first contact plug on the cell region to electrically connect the first and second lines to each other.

3 . The device of claim 2 , wherein the defect detection structure further comprises a second contact plug provided at the same level as that of the first contact plug, on the peripheral region, to electrically connect the first and second defect detection lines to each other.

4 . The device of claim 1 , wherein the interconnection structure further comprises a third line on the cell region and between the first and second lines.

5 . The device of claim 4 , wherein the interconnection structure further comprises a first contact plug electrically connecting the first and third lines to each other and a second contact plug electrically connecting the second and third lines to each other, and
the defect detection structure further comprises a third contact plug electrically connecting the first and second defect detection lines to each other.

6 . The device of claim 4 , wherein the defect detection structure further comprises a third defect detection line provided on the peripheral region and positioned at substantially the same level as that of the third line.

7 . The device of claim 6 , wherein the interconnection structure further comprises a first contact plug electrically connecting the first and third lines to each other and a second contact plug electrically connecting the second and third lines to each other, and
the defect detection structure further comprises a third contact plug electrically connecting the first and third defect detection lines to each other and a fourth contact plug electrically connecting the second and third defect detection lines to each other.

8 . The device of claim 1 , wherein, when viewed in plan view, the second defect detection line is shaped like an open rectangular ring having end portions separated from each other, and the defect detection structure further comprises detection pads electrically connected to the end portions of the second defect detection line.

9 . The device of claim 8 , wherein the first defect detection line has a shape corresponding to that of the second defect detection line.

10 . The device of claim 8 , wherein the first defect detection line comprises first patterns horizontally separated from each other.

11 . The device of claim 10 , wherein the defect detection structure further comprises a third defect detection line between the first and second defect detection lines, and
the third defect detection line comprises second patterns which are horizontally separated from each other and are disposed to cross the first patterns.

12 . The device of claim 11 , wherein the defect detection structure further comprises two first contact plugs, which are connected in common to a corresponding one of the first patterns but are respectively connected to different ones of the second patterns.

13 . The device of claim 11 , wherein the defect detection structure further comprises a plurality of second contact plugs, each electrically connecting a corresponding one of the second patterns to the second defect detection line.

14 . The device of claim 1 , wherein, when viewed in plan view, the second defect detection line comprises patterns horizontally separated from each other to enclose the interconnection structure, and
the defect detection structure further comprises detection pads electrically connected to end portions of each of the patterns.

15 . The device of claim 1 , wherein the first and second lines, the first and second defect detection lines, and the first and second contact plugs comprises at least one of polysilicon, tungsten, and copper.

16 . A semiconductor device, comprising:
a substrate including a cell region and a peripheral region; an interconnection structure including a first line, a first contact plug, a second line, a second contact plug, and a third line sequentially stacked on the cell region of the substrate; and a defect detection structure including a first defect detection line, a third contact plug, a second defect detection line, a fourth contact plug, and a third defect detection line sequentially stacked on the peripheral region of the substrate, wherein the first defect detection line comprises a plurality of first patterns, the second defect detection line comprises a plurality of second patterns crossing the first patterns, and the third contact plug connects the first and second patterns electrically to each other.

17 . The device of claim 16 , wherein a pair of third contact plugs are provided on each of the first pattern and are electrically and respectively connected to different ones of the second patterns.

18 . The device of claim 16 , wherein the first line is positioned at substantially the same level as that of the first defect detection line.

19 . The device of claim 16 , wherein the second line is positioned at substantially the same level as that of the second defect detection line.

20 . The device of claim 16 , wherein, when viewed in plan view, the second defect detection line is shaped like an open rectangular ring having end portions separated from each other, and the defect detection structure further comprises detection pads electrically connected to the end portions of the second defect detection line.

Assignees

• Samsung Electronics Co Ltd

Inventors

• KIM Sundae
• Cho Yun-Rae
• Baek Namgyu
• Lee Seokhyun

Classifications

• H10P74/277 Primary

  Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/43

  Layouts of interconnections · CPC title

• H10W20/42

  Vias, e.g. via plugs · CPC title