Etching method, etching apparatus, and storage medium

Patent metadata

Field	Value
Publication number	US-2016233106-A1
Application number	US-201415024084-A
Country	US
Kind code	A1
Filing date	Sep 19, 2014
Priority date	Sep 27, 2013
Publication date	Aug 11, 2016
Grant date	—

Abstract

[Problem] To perform precise etching treatment on a wafer by maintaining in a given range the concentration of leached components in an etching solution leaching from a wafer, without completely replacing the etching solution.
[Solution] This etching method comprises a plurality of etching steps, and an interval step between each of the etching steps. Each etching step contains a first partial replacement pattern wherein only a first set amount of the etching solution supplied for the etching treatment is discharged, and only a second set amount of fresh etching solution is supplied. The interval step contains a second partial replacement pattern wherein only a third set amount of the etching solution supplied for the etching treatment is discharged, and only a fourth set amount of the fresh etching solution is supplied.

First claim

1 . An etching method comprising:
an etching step of performing an etching processing using an etching liquid on a workpiece accommodated in an etching processing unit; and an interval step between the etching step on the workpiece and a next etching step on another workpiece, wherein the etching step includes a first partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a first set amount, and supplying a new etching liquid into the etching processing unit by a second set amount, and the interval step includes a second partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a third set amount, and supplying a new etching liquid into the etching processing unit by a fourth set amount.

2 . The etching method of claim 1 , wherein the first partial replacement pattern of the etching step includes continuously discharging the etching liquid in the etching processing unit provided for the etching processing by the first set amount, and continuously supplying a new etching liquid by the second set amount.

3 . The etching method of claim 1 , wherein the first partial replacement pattern of the etching step includes intermittently discharging the etching liquid in the etching processing unit provided for the etching processing by the first set amount, and intermittently supplying a new etching liquid by the second set amount.

4 . The etching method of claim 1 , wherein the second partial replacement pattern of the interval step includes continuously discharging the etching liquid in the etching processing unit provided for the etching processing by the third set amount, and continuously supplying a new etching liquid by the fourth set amount.

5 . The etching method of claim 1 , wherein the second partial replacement pattern of the interval step includes intermittently discharging the etching liquid in the etching processing unit provided for the etching processing by the third set amount, and intermittently supplying a new etching liquid by the fourth set amount.

6 . The etching method of claim 1 , wherein the second partial replacement pattern of the interval step includes the third set amount and the fourth amount which are set such that a concentration of an elution component in the etching liquid eluted from the workpiece provided for the etching processing at the time of the start of the etching step immediately after the interval step, is returned to a predetermined value.

7 . The etching method of claim 1 , wherein the first partial replacement pattern of the etching step includes the first set value and the second set value which are set such that a concentration of the etching liquid of the etching processing unit becomes constant, and the second partial replacement pattern of the interval step includes the third set value and the fourth set value which are set such that a concentration of the etching liquid of the etching processing unit becomes constant.

8 . An etching apparatus for performing an etching processing on a workpiece, the device comprising:
an etching processing unit configured to accommodate the workpiece and perform the etching processing with an etching liquid; a discharge unit configured to discharge the etching liquid provided for the etching processing in the etching processing unit; a supply unit configured to supply a new etching liquid to the etching processing unit; and a controller configured to control driving of the etching processing unit, the discharge unit, and the supply unit to thereby perform an etching method, wherein the etching method performed by the controller includes: an etching step of performing an etching processing using an etching liquid on a workpiece accommodated in an etching processing unit; and an interval step between the etching step on the workpiece and a next etching step on another workpiece, the etching step includes a first partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a first set amount, and supplying a new etching liquid into the etching processing unit by a second set amount, and the interval step includes a second partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a third set amount, and supplying a new etching liquid into the etching processing unit by a fourth set amount.

9 . The etching apparatus of claim 8 , wherein the first partial replacement pattern of the etching step includes continuously discharging the etching liquid in the etching processing unit provided for the etching processing by the first set amount, and continuously supplying a new etching liquid by the second set amount.

10 . The etching apparatus of claim 8 , wherein the first partial replacement pattern of the etching step includes intermittently discharging the etching liquid in the etching processing unit provided for the etching processing by the first set amount, and intermittently supplying a new etching liquid by the second set amount.

11 . The etching apparatus of claim 8 , wherein the second partial replacement pattern of the interval step includes continuously discharging the etching liquid in the etching processing unit provided for the etching processing by the third set amount, and continuously supplying a new etching liquid by the fourth set amount.

12 . The etching apparatus of claim 8 , wherein the second partial replacement pattern of the interval step includes intermittently discharging the etching liquid in the etching processing unit provided for the etching processing by the third set amount, and intermittently supplying a new etching liquid by the fourth set amount.

13 . The etching apparatus of claim 8 , wherein the second partial replacement pattern of the interval step includes the third set amount and the fourth amount which are set such that a concentration of an elution component in the etching liquid eluted from the workpiece provided for the etching processing at the time of the start of the etching step immediately after the interval step, is returned to a predetermined value.

14 . The etching apparatus of claim 8 , wherein the first partial replacement pattern of the etching step includes the first set value and the second set value which are set such that a concentration of the etching liquid of the etching processing unit becomes constant, and the second partial replacement pattern of the interval step includes the third set value and the fourth set value which are set such that a concentration of the etching liquid of the etching processing unit becomes constant.

15 . A non-transitory computer-readable storage medium that stores a computer program for performing an etching method,
wherein the etching method includes: an etching step of performing an etching processing using an etching liquid on a workpiece accommodated in an etching processing unit; and an interval step between the etching step on the workpiece and a next etching step on another workpiece, the etching step includes a first partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a first set amount, and supplying a new etching liquid into the etching processing unit by a second set amount, and the interval step includes a second partial replacement pattern including discharging the etching liquid in the etching processing unit provided for th

Assignees

• Tokyo Electron Ltd

Inventors

• Furukawa Takahiro
• FUTAMATA Yusuke
• Sato Hideaki
• Hara Hiromi
• KAWAZU Takahiro
• Shiokawa Toshiyuki
• Satoh Takami

Classifications

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H10P50/642 Primary

  Chemical etching · CPC title

• H01L21/67086

  Electricity · mapped topic

• H01L21/30604 Primary

  Electricity · mapped topic