Creep resistant reflective structure in mems display

Patent metadata

Field	Value
Publication number	US-2016232858-A1
Application number	US-201514619991-A
Country	US
Kind code	A1
Filing date	Feb 11, 2015
Priority date	Feb 11, 2015
Publication date	Aug 11, 2016
Grant date	—

Abstract

This disclosure provides devices, systems, and methods for improving creep resistance and mechanical strength of a MEMS display device. The MEMS display device can include a movable reflective structure connected and supported by a support structure. The movable reflective structure can include at least a transition metal layer sandwiched between two aluminum or aluminum alloy layers. The aluminum or aluminum alloy layers can be doped with the transition metal upon annealing. The transition metal layer between the aluminum or aluminum alloy layers can control the mechanical, optical, and electrical properties of the MEMS display device.

First claim

What is claimed is:

1 . A microelectromechanical systems (MEMS) display device, comprising:
a substrate; a movable reflective structure over the substrate, wherein the movable reflective structure includes an annealed thin film stack, the annealed thin film stack including:
a first layer including aluminum or aluminum alloy,
a second layer including aluminum or aluminum alloy and over the first layer,
a third layer between the first layer and the second layer and in contact with at least one of the first layer and the second layer, the third layer including a transition metal, the transition metal including at least one of: zirconium, scandium, ruthenium, titanium, tantalum, molybdenum, and chromium; and
one or more support structures over the substrate and connected to the movable reflective structure to support the movable reflective structure.

2 . The device of claim 1 , wherein one or both of the first layer and the second layer is doped with about 0.1 atomic % to about 10 atomic % of the transition metal.

3 . The device of claim 1 , wherein a stress of the movable reflective structure is less than about 200 MPa.

4 . The device of claim 1 , wherein the third layer has a thickness of less than about 5 nm, and the first layer and the second layer each have a thickness of equal to or greater than about 20 nm.

5 . The device of claim 1 , wherein a thickness of the third layer is about 10% or less than a total thickness of the thin film stack.

6 . The device of claim 1 , wherein a reflectance of the movable reflective structure is greater than about 80%.

7 . The device of claim 1 , wherein each of the first layer and the second layer is doped to include between about 1 atomic % and about 20 atomic % of one or both of oxygen and nitrogen.

8 . The device of claim 1 , wherein the third layer is in contact with both the first layer and the second layer.

9 . The device of claim 1 , wherein the first layer and the second layer are substantially identical in composition and thickness.

10 . The device of claim 9 , wherein the thin film stack further includes:
a fourth layer below the first layer, the fourth layer being substantially identical in composition and thickness with the third layer.

11 . The device of claim 10 , wherein the thin film stack further includes:
a fifth layer below the fourth layer, the fifth layer being substantially identical in composition and thickness with the first layer and the second layer.

12 . The device of claim 1 , further comprising:
a stationary electrode between the substrate and movable reflective structure, the stationary electrode and the movable reflective structure defining a gap therebetween, the movable reflective structure configured to move across the gap towards the stationary electrode by electrostatic force.

13 . The device of claim 1 , wherein the MEMS display device forms a display, the MEMS display device further comprising:
a processor that is configured to communicate with the display, the processor being configured to process image data; and a memory device that is configured to communicate with the processor.

14 . The device of claim 13 , further comprising:
a driver circuit configured to send at least one signal to the display; and a controller configured to send at least a portion of the image data to the driver circuit.

15 . The device of claim 13 , further comprising:
an image source module configured to send the image data to the processor, wherein the image source module comprises at least one of a receiver, transceiver, and transmitter.

16 . The device of claim 13 , further comprising:
an input device configured to receive input data and to communicate the input data to the processor.

17 . A method of manufacturing a MEMS display device, the method comprising:
providing a substrate; forming a support structure over the substrate; forming a movable reflective structure over the substrate and connected to the support structure, wherein the movable reflective structure includes:
a first layer including aluminum or aluminum alloy;
a second layer including aluminum or aluminum alloy and over the first layer;
a third layer between the first layer and the second layer and in contact with at least one of the first layer and the second layer, the third layer including a transition metal, the transition metal including at least one of: zirconium, scandium, ruthenium, titanium, tantalum, molybdenum, and chromium; and
annealing the movable reflective structure.

18 . The method of claim 17 , wherein forming the movable reflective structure includes:
depositing the first layer over the substrate; depositing the third layer on the first layer; and depositing the second layer on the third layer.

19 . The method of claim 18 , wherein depositing the first layer includes doping the first layer with one or both of oxygen and nitrogen, and wherein depositing the second layer includes doping the second layer with one or both of oxygen and nitrogen.

20 . The method of claim 18 , further comprising:
depositing a fourth layer between the substrate and the first layer, wherein the fourth layer is substantially identical in thickness and composition with the third layer.

21 . The method of claim 20 , further comprising:
depositing a fifth layer between the substrate and the fourth layer, wherein the fifth layer is substantially identical in thickness and composition with the first layer and the second layer.

22 . The method of claim 17 , wherein annealing the movable reflective structure includes doping the first layer and the second layer with the transition metal.

Assignees

• Qualcomm Mems Technologies Inc

Inventors

• Pan Yaoling
• Pushparaj Victor Louis Arockiaraj
• Hong John
• Chan Edward

Classifications

• C23C14/0042

  Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements · CPC title

• G02B26/02

  for controlling the intensity of light {(G02B26/004 takes precedence)} · CPC title

• G09G3/3466 Primary

  based on interferometric effect · CPC title

• G02B5/0875 Primary

  the reflecting layers comprising two or more metallic layers · CPC title

• B81B2203/0163

  Spring holders · CPC title