Bonding method for three-layer substrate

Patent metadata

Field	Value
Publication number	US-2016229169-A1
Application number	US-201615015693-A
Country	US
Kind code	A1
Filing date	Feb 4, 2016
Priority date	Feb 9, 2015
Publication date	Aug 11, 2016
Grant date	—

Abstract

To facilitate the anodic bonding of individual layers without precipitation of movable ions in a three-layer structure interposing a glass substrate such as a silicon-glass-silicon structure, an anodic bonding condition for a sensor chip and a glass substrate in a secondary anodic bonding process is made weaker than an anodic bonding condition for a silicon tube and the glass substrate in a primary anodic bonding process. The secondary anodic bonding process is completed before movable ions in the glass substrate that have been attracted to a part of the glass substrate close to a cathode in the primary anodic bonding process reach a bonded surface between the glass substrate and the silicon tube in the secondary anodic bonding process.

First claim

1 . A bonding method for a three-layer substrate, the method comprising:
a primary anodic bonding process for performing anodic bonding between one surface of a glass substrate and a first substrate by connecting the first substrate to an anode and the glass substrate to a cathode; and a secondary anodic bonding process for performing anodic bonding between a second substrate and another surface of the glass substrate by connecting a bonded body of the first substrate and the glass substrate bonded in the primary anodic bonding process to a cathode and the second substrate to an anode, wherein an anodic bonding condition for the second substrate and the glass substrate in the secondary anodic bonding process is weaker than an anodic bonding condition for the first substrate and the glass substrate in the primary anodic bonding process so that the secondary anodic bonding process is completed before movable ions in the glass substrate that have been attracted to a part of the glass substrate close to the cathode in the primary anodic bonding process reach a bonded surface between the glass substrate and the first substrate in the secondary anodic bonding process.

2 . The bonding method for a three-layer substrate according to claim 1 ,
wherein each of the anodic bonding conditions in the primary anodic bonding process and the secondary anodic bonding process includes an applied voltage and a bonding temperature and one of an applied voltage and a bonding temperature in the secondary anodic bonding process is lower than an applied voltage and a bonding temperature in the primary anodic bonding process.

3 . The bonding method for a three-layer substrate according to claim 1 ,
wherein each of the anodic bonding conditions in the primary anodic bonding process and the secondary anodic bonding process includes an applied voltage and a bonding temperature and both an applied voltage and a bonding temperature in the secondary anodic bonding process are lower than an applied voltage and a bonding temperature in the primary anodic bonding process.

Assignees

• Azbil Corp

Inventors

• Yuuki Kouji

Classifications

• B32B2457/00

  Electrical equipment · CPC title

• G01L19/00

  Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges · CPC title

• B32B38/0008 Primary

  Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation (heat treatment B32B38/0036) · CPC title

• B32B2315/08

  Glass · CPC title

• B32B2313/00

  Elements other than metals · CPC title