Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-2016222514-A1
Application number	US-201514751378-A
Country	US
Kind code	A1
Filing date	Jun 26, 2015
Priority date	Feb 2, 2015
Publication date	Aug 4, 2016
Grant date	—

Abstract

A semiconductor manufacturing apparatus according to an embodiment comprises a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate. A first supplier supplies a source gas to a first area in the reaction chamber. A second supplier supplies an oxidation gas to a second area in the reaction chamber. A third supplier supplies a hydrogen gas to a third area between the first area and the second area in the reaction chamber. A stage moves the semiconductor substrate to any one of the first to third areas.

First claim

1 . A semiconductor manufacturing apparatus comprising:
a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate; a first supplier supplying a source gas to a first area in the reaction chamber; a second supplier supplying an oxidation gas to a second area in the reaction chamber; a third supplier supplying a hydrogen gas to a third area between the first area and the second area in the reaction chamber; and a stage moving the semiconductor substrate to any one of the first to third areas.

2 . The apparatus of claim 1 , wherein the stage moves the semiconductor substrate to pass through the third area when the semiconductor substrate is to be moved between the first area and the second area in a forming process of the deposited film.

3 . The apparatus of claim 1 , wherein the third area separates the first area and the second area from each other with hydrogen gas.

4 . The apparatus of claim 2 , wherein the third area separates the first area and the second area from each other with hydrogen gas.

5 . The apparatus of claim 1 , wherein
the stage is capable of rotating around a center of the stage on which a plurality of the semiconductor substrates are mounted, and the stage moves the semiconductor substrate to the first area, the third area, the second area, and the third area in this order while rotating in a forming process of the deposited film.

6 . The apparatus of claim 2 , wherein
the stage is capable of rotating around a center of the stage on which a plurality of the semiconductor substrates are mounted, and the stage moves the semiconductor substrate to the first area, the third area, the second area, and the third area in this order while rotating in a forming process of the deposited film.

7 . The apparatus of claim 3 , wherein
the stage is capable of rotating around a center of the stage on which a plurality of the semiconductor substrates are mounted, and the stage moves the semiconductor substrate to the first area, the third area, the second area, and the third area in this order while rotating in a forming process of the deposited film.

8 . The apparatus of claim 1 , wherein
the stage is circular, the first to third areas are fan-shaped areas on a surface of the stages, respectively, the second area is located on an opposite side of a center of the stage to the first area, and the stage has two third areas which are located at positions between the first area and the second area, respectively.

9 . The apparatus of claim 2 , wherein
the stage is circular, the first to third areas are fan-shaped areas on a surface of the stages, respectively, the second area is located on an opposite side of a center of the stage to the first area, and the stage has two third areas which are located at positions between the first area and the second area, respectively.

10 . The apparatus of claim 3 , wherein
the stage is circular, the first to third areas are fan-shaped areas on a surface of the stages, respectively, the second area is located on an opposite side of a center of the stage to the first area, and the stage has two third areas which are located at positions between the first area and the second area, respectively.

11 . The apparatus of claim 1 , wherein
the stage is capable of rotating around a center of the stage, on which a plurality of the semiconductor substrates mounted, the second supplier is located on an opposite side of the center of the stage to the first supplier, and two third suppliers are provided and are located at positions between the first supplier and the second supplier in a rotation direction of the stage, respectively.

12 . The apparatus of claim 2 , wherein
the stage is capable of rotating around a center of the stage, on which a plurality of the semiconductor substrates mounted, the second supplier is located on an opposite side of the center of the stage to the first supplier, and two third suppliers are provided and are located at positions between the first supplier and the second supplier in a rotation direction of the stage, respectively.

13 . The apparatus of claim 3 , wherein
the stage is capable of rotating around a center of the stage, on which a plurality of the semiconductor substrates mounted, the second supplier is located on an opposite side of the center of the stage to the first supplier, and two third suppliers are provided and are located at positions between the first supplier and the second supplier in a rotation direction of the stage, respectively.

14 . The apparatus of claim 1 , wherein a temperature in the reaction chamber is about 600° C. to about 800° C. and a partial pressure ratio (partial pressure of O 2 /partial pressure of H 2 ) between oxygen and hydrogen in the reaction chamber is equal to or lower than 0.25 or a partial pressure ratio (partial pressure of H 2 O/partial pressure of H 2 ) between water and hydrogen in the reaction chamber is equal to or lower than 1.0 in a forming process of the deposited film.

15 . The apparatus of claim 2 , wherein a temperature in the reaction chamber is about 600° C. to about 800° C. and a partial pressure ratio (partial pressure of O 2 /partial pressure of H 2 ) between oxygen and hydrogen in the reaction chamber is equal to or lower than 0.25 or a partial pressure ratio (partial pressure of H 2 O/partial pressure of H 2 ) between water and hydrogen in the reaction chamber is equal to or lower than 1.0 in a forming process of the deposited film.

16 . The apparatus of claim 3 , wherein a temperature in the reaction chamber is about 600° C. to about 800° C. and a partial pressure ratio (partial pressure of O 2 /partial pressure of H 2 ) between oxygen and hydrogen in the reaction chamber is equal to or lower than 0.25 or a partial pressure ratio (partial pressure of H 2 O/partial pressure of H 2 ) between water and hydrogen in the reaction chamber is equal to or lower than 1.0 in a forming process of the deposited film.

17 . A manufacturing method of semiconductor device using a semiconductor manufacturing apparatus comprising a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate, a first supplier supplying a source gas to a first area in the reaction chamber, a second supplier supplying an oxidation gas to a second area in the reaction chamber, and a third supplier supplying a hydrogen gas to a third area between the first area and the second area in the reaction chamber, the method comprising:
supplying the source gas to the surface of the semiconductor substrate in the first area so that a source adheres to the surface of the semiconductor substrate; moving the semiconductor substrate from the first area to the second area through the third area; oxidizing the source having adhered to the surface of the semiconductor substrate with the oxidation gas to form the deposited film in the second area; and moving the semiconductor substrate from the second area to the first area again through the third area.

18 . The method of claim 17 , wherein the first area and the second area are separated by hydrogen gas in the third area.

19 . The method of claim 17 , wherein a temperature in the reaction chamber is about 600° C. to about 800° C. and a partial pressure ratio (partial pressure of O 2 /partial pressure of H 2 ) between oxygen and hydrogen

Assignees

• Toshiba Kk

Inventors

• Fujii Motoki
• Aiso Fumiki
• Nagano Hajime
• Fujitsuka Ryota

Classifications

• H10P72/7621

  characterised by supporting two or more semiconductor substrates · CPC title

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title