Resist underlayer film-forming composition which contains alicyclic skeleton-containing carbazole resin

Patent metadata

Field	Value
Publication number	US-9343324-B2
Application number	US-201214131011-A
Country	US
Kind code	B2
Filing date	Jul 5, 2012
Priority date	Jul 7, 2011
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

There is provided a resist underlayer film used in lithography process that has a high n value and a low k value, and can effectively reduce reflection of light having a wavelength of 193 nm from the substrate in a three-layer process in which the resist underlayer film is used in combination with a silicon-containing intermediate layer. A resist underlayer film-forming composition used in lithography process including: a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound. The condensed heterocyclic compound is a carbazole compound or a substituted carbazole compound. The bicyclo ring compound is dicyclopentadiene, substituted dicyclopentadiene, tetracyclo[4.4.0.1 2,5 .1 7,10 ]dodeca-3,8-diene, or substituted tetracyclo[4.4.0.1 2,5 .1 7,10 ]dodeca-3,8-diene.

First claim

The invention claimed is:

1. A resist underlayer film-forming composition comprising:
a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound; wherein
the polymer is a polymer containing a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), or a combination of the unit structures of Formulae (1), (2), and (3):

where
R 1 to R 14 are each a substituent of a hydrogen atom and are each independently a halogen group, a nitro group, an amino group, a hydroxy group, or a C 1-10 alkyl group for which the groups are optionally substituted or a C 6-40 aryl group for which the groups are optionally substituted;
each of n 1 , n 2 , n 5 , n 6 , n 9 , n 10 , n 13 , n 14 , and n 15 is an integer of 0 to 3;
each of n 3 , n 4 , n 7 , n 8 , n 11 , and n 12 is an integer of 0 to 4; and
in Formula (3) Ar is a phenyl group or a naphthyl group.

2. The resist underlayer film-forming composition according to claim 1 , further comprising a cross-linking agent.

3. The resist underlayer film-forming composition according to claim 1 , further comprising an acid and/or an acid generator.

4. A resist underlayer film obtained by applying the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate and baking the resist underlayer film-forming composition.

5. A method for forming a resist pattern used in production of a semiconductor, the method comprising:
applying the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate and baking the resist underlayer film-forming composition to form a resist underlayer film,
forming a resist film on the resist underlayer film, and
forming a resist pattern by irradiation with light or electron beams and development.

6. A production method of a semiconductor device, the production method comprising:
forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition as claimed in claim 1 ;
forming a resist film on the underlayer film;
forming a resist pattern in the resist film by irradiation with light or electron beams and development;
etching the underlayer film using the resist pattern; and
fabricating the semiconductor substrate using the underlayer film thus patterned.

7. A production method of a semiconductor device, the production method comprising:
forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition as claimed in claim 1 ;
forming a hard mask on the underlayer film;
further forming a resist film on the hard mask;
forming a resist pattern in the resist film by irradiation with light or electron beams and development;
etching the hard mask using the resist pattern;
etching the underlayer film using the hard mask thus patterned; and
fabricating the semiconductor substrate using the underlayer film thus patterned.

8. The production method according to claim 7 , wherein the hard mask is formed by application of an inorganic substance solution or deposition of an inorganic substance.

Assignees

• Shinjo Tetsuya
• Someya Yasunobu
• Hashimoto Keisuke
• Karasawa Ryo
• Nissan Chemical Ind Ltd

Inventors

• Shinjo Tetsuya
• Someya Yasunobu
• Hashimoto Keisuke
• Karasawa Ryo

Classifications

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/692 Primary

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• G03F7/094

  Multilayer resist systems, e.g. planarising layers · CPC title

• C08F226/06

  by a heterocyclic ring containing nitrogen · CPC title