Method for manufacturing graphene, said graphene, and apparatus for manufacturing same
US-2015368109-A1 · Dec 24, 2015 · US
Method of producing graphene film
US2016221830A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016221830-A1 |
| Application number | US-201615094249-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 8, 2016 |
| Priority date | Oct 25, 2013 |
| Publication date | Aug 4, 2016 |
| Grant date | — |
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Abstract
Official abstract text for this publication.
A method includes forming a first graphene film on a first substrate, applying a support film to the first graphene film, removing the first substrate to form a structure where the first graphene film is supported by the support film, forming a second graphene film on a second substrate, transferring the first graphene film supported by the support film onto the second graphene film formed on the second substrate to form a multilayer graphene film where the first graphene film and the second graphene film are stacked, removing the second substrate to form a structure where the multilayer graphene film is supported by the support film, transferring the multilayer graphene film onto a third substrate, and removing the support film to form a structure where the multilayer graphene film is formed on the third substrate.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method, comprising: forming a first graphene film on a first substrate; applying a support film to the first graphene film; removing the first substrate to form a structure where the first graphene film is supported by the support film; forming a second graphene film on a second substrate; transferring the first graphene film supported by the support film onto the second graphene film formed on the second substrate to form a multilayer graphene film where the first graphene film and the second graphene film are stacked; removing the second substrate to form a structure where the multilayer graphene film is supported by the support film; transferring the multilayer graphene film onto a third substrate; and removing the support film to form a structure where the multilayer graphene film is formed on the third substrate. 2 . The method as claimed in claim 1 , further comprising: before transferring the multilayer graphene film onto the third substrate, repeating a process of forming another graphene film on another substrate, transferring the multilayer graphene film supported by the support film onto the another graphene film formed on the another substrate, and removing the another substrate to form the multilayer graphene film supported by the support film and including three or more stacked graphene films. 3 . The method as claimed in claim 1 , wherein the first substrate is a first catalyst for forming the first graphene film; and the second substrate is a second catalyst for forming the second graphene film. 4 . The method as claimed in claim 1 , wherein a crystal orientation of the first substrate is the same as a crystal orientation of the second substrate; and a crystal orientation of the first graphene film is the same as a crystal orientation of the second graphene film. 5 . The method as claimed in claim 1 , wherein each of the first substrate and the second substrate comprises copper; the first substrate is removed by using ferric chloride; and the second substrate is removed by using ferric chloride.
Assignees
Inventors
Classifications
Transfer laminating · CPC title
- C01B31/0453Primary
Chemistry & Metallurgy · mapped topic
Specific amount of layers or specific thickness · CPC title
Removing layers, or parts of layers, mechanically or chemically · CPC title
- C01B32/186Primary
by chemical vapour deposition [CVD] · CPC title
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Frequently asked questions
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- What does patent US2016221830A1 cover?
- A method includes forming a first graphene film on a first substrate, applying a support film to the first graphene film, removing the first substrate to form a structure where the first graphene film is supported by the support film, forming a second graphene film on a second substrate, transferring the first graphene film supported by the support film onto the second graphene film formed on t…
- Who is the assignee on this patent?
- Fujitsu Ltd
- What technology area does this patent fall under?
- Primary CPC classification C01B31/0453. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Aug 04 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).