Organic light emitting diode and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-2016211485-A1
Application number	US-201414912979-A
Country	US
Kind code	A1
Filing date	Aug 21, 2014
Priority date	Aug 26, 2013
Publication date	Jul 21, 2016
Grant date	—

Abstract

Disclosed are an organic light emitting diode and a method of manufacturing the same, the organic light emitting diode including: a light-transmitting substrate including a first region and a second region separated from the first region; a first lower electrode formed on the first region of the light-transmitting substrate and a second lower electrode formed on the second region thereof; a first organic thin film layer including a first emission material layer, formed on the first lower electrode of the first region, and a second organic thin film layer including a second emission material layer, formed on the second lower electrode of the second region; and a light-transmitting upper electrode formed on the first organic thin film layer and the second organic thin film layer and configured such that portions corresponding to the first region and the second region are connected to each other.

First claim

1 . An organic light emitting diode, comprising:
a light-transmitting substrate including a first region and a second region separated from the first region; a first lower electrode formed on the first region of the light-transmitting substrate and a second lower electrode formed on the second region thereof; a first organic thin film layer including a first emission material layer, formed on the first lower electrode of the first region, and a second organic thin film layer including a second emission material layer, formed on the second lower electrode of the second region; and a light-transmitting upper electrode formed on the first organic thin film layer and the second organic thin film layer and configured such that portions corresponding to the first region and the second region are connected to each other, wherein a functional layer that enables mutual reinforcement and interference of transmitted light is formed on a portion of the upper electrode corresponding to any one of the first region and the second region, and a conductive reflective layer is formed on the functional layer and on a remaining portion of the upper electrode on which the functional layer is not formed, the conductive reflective layer being configured such that portions corresponding to the first region and the second region are connected to each other, whereby the upper electrode and the reflective layer are connected to each other through ohmic contact.

2 . An organic light emitting diode, comprising:
a light-transmitting substrate including a first region, a second region separated from the first region, and a third region separated from the first region and the second region; a first lower electrode formed on the first region of the light-transmitting substrate, a second lower electrode formed on the second region thereof, and a third lower electrode formed on the third region thereof; a first organic thin film layer including a first emission material layer, formed on the first lower electrode of the first region, a second organic thin film layer including a second emission material layer, formed on the second lower electrode of the second region, and a third organic thin film layer including a third emission material layer, formed on the third lower electrode of the third region; and a light-transmitting upper electrode formed on the first organic thin film layer, the second organic thin film layer, and the third organic thin film layer and configured such that portions corresponding to the first region, the second region and the third region are connected to each other, wherein a functional layer that enables mutual reinforcement and interference of transmitted light is formed on a portion of the upper electrode corresponding to any one or two of the first region, the second region and the third region, and a conductive reflective layer is formed on the functional layer and on a remaining portion of the upper electrode on which the functional layer is not formed, the conductive reflective layer being configured such that portions corresponding to the first region, the second region and the third region are connected to each other, whereby the upper electrode and the reflective layer are connected to each other through ohmic contact.

3 . The organic light emitting diode of claim 2 , wherein each of the first emission material layer, the second emission material layer and the third emission material layer is a red, green or blue emission material layer for emitting light in a wavelength range of 380 to 800 nm.

4 . The organic light emitting diode of claim 2 , wherein the functional layer is formed on a portion of the upper electrode corresponding to any one of the first region, the second region and the third region.

5 . The organic light emitting diode of claim 3 , wherein the functional layer is formed on the upper electrode corresponding to a region where the blue emission material layer is formed.

6 . The organic light emitting diode of claim 1 , further comprising an auxiliary electrode formed on an edge of the lower electrode.

7 . The organic light emitting diode of claim 1 , wherein each lower electrode is a conductive transparent electrode and has a thickness of 1 to 1000 nm.

8 . The organic light emitting diode of claim 1 , wherein the upper electrode has a transmittance of 10% or more and a resistance ranging from 0.1 mΩ to 500Ω.

9 . The organic light emitting diode of claim 1 , wherein the upper electrode has a thickness of 1 to 1000 nm, and a material for the upper electrode comprises any one or a combination of two or more selected from among copper, chromium, molybdenum, nickel, aluminum, magnesium, silver, gold, platinum, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), ZnO/Ga 2 O 3 , ZnO/Al 2 O 3 , sodium, a sodium-potassium alloy, cesium, magnesium, lithium, a magnesium-silver alloy, aluminum, aluminum oxide, an aluminum-lithium alloy, indium, a rare earth metal, and mixtures thereof with an organic light-emitting medium material.

10 . The organic light emitting diode of claim 1 , wherein the functional layer has a refractive index of 0.1 to 10 and a thickness of 1 to 1000 nm.

11 . The organic light emitting diode of claim 1 , wherein the functional layer comprises any one or a combination of two or more selected from among an inorganic material, including metal oxide or metal nitride; and an organic material, including a conductive organic material, a polymer compound, a mixture of a conductive organic material and a polymer compound, a hole injection material, a hole transport material, an electron transport material, a host material, and a dopant material.

12 . The organic light emitting diode of claim 1 , wherein mutual reinforcement and interference of light emitted from the organic light emitting diode are controlled by adjusting a thickness of the functional layer or the light-transmitting upper electrode.

13 . The organic light emitting diode of claim 1 , wherein the reflective layer has a reflectance of 20% or more.

14 . The organic light emitting diode of claim 1 , wherein the reflective layer comprises any one or a combination of two or more selected from among aluminum, magnesium, silver, gold, platinum, chromium, cobalt, tungsten, calcium, lithium, and sodium, and has a thickness of 1 to 5000 nm.

15 . The organic light emitting diode of claim 1 , wherein the organic thin film layer comprises at least one selected from among a hole injection layer, a hole transport layer, an electron blocking layer, a layer having both a hole injection function and a hole transport function, an emission material layer, a hole blocking layer, an electron transport layer, and an electron injection layer.

16 . The organic light emitting diode of claim 15 , wherein mutual reinforcement and interference of light are controlled by changing a thickness of at least one selected from among the hole injection layer, the hole transport layer, the electron blocking layer, the layer having both a hole injection function and a hole transport function, the emission material layer, the hole blocking layer, the electron transport layer, and the electron injection layer, which are included in the organic thin film layer.

17 . The organic light emitting diode of claim 15 , wherein the emission material layer comprises a combination of at least one host and at least one dopant.

18 . The organic light emitting diode of claim 1 , further comprising a capping layer disposed between the lower electrode and the substrate or on an outer surface of the

Assignees

• Sfc Co Ltd

Inventors

• Lee Oun-Gyu
• Park Young-Hwan
• Je Jong-Tae

Classifications

• H10K59/878

  comprising reflective means · CPC title

• H10K59/876

  comprising a resonant cavity structure, e.g. Bragg reflector pair · CPC title

• H10K59/871

  Self-supporting sealing arrangements · CPC title

• H10K59/80524

  Transparent cathodes, e.g. comprising thin metal layers · CPC title

• H10K59/80523

  Multilayers, e.g. opaque multilayers · CPC title