Display apparatus
US-2024414942-A1 · Dec 12, 2024 · US
Oxide for semiconductor layer of thin film transistor, thin film transistor and display device
US2016211384A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016211384-A1 |
| Application number | US-201414392369-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 27, 2014 |
| Priority date | Mar 8, 2013 |
| Publication date | Jul 21, 2016 |
| Grant date | — |
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Abstract
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In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×10 15 cm −3 or less, and a mobility satisfies 15 cm2/Vs or more.
First claim
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1 . An oxide for a semiconductor layer used as a semiconductor layer of a thin film transistor, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×1015cm−3 or less, and a mobility satisfies 15 cm2/Vs or more. 2 . The oxide for the semiconductor layer of claim 1 , wherein: when a content (atomic %) of each metal element for the total metal elements in the oxide, except for oxygen, is respectively referred to as [In], [Zn] and [Sn], a following relation is satisfied: 1≦[In], 50≦[Zn]≦95, 1≦[Sn]≦30. 3 . The oxide for the semiconductor layer of claim 1 , wherein: the oxygen partial pressure is 40% by volume or less. 4 . A thin film transistor in which the oxide for the semiconductor layer of claim 3 is provided in the semiconductor layer of the thin film transistor. 5 . A display device in which the thin film transistor of claim 4 is provided. 6 . The oxide for the semiconductor layer of claim 2 , wherein: the oxygen partial pressure is 40% by volume or less.
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Inventors
Classifications
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
Oxides · CPC title
Subject matter not provided for in other groups of this subclass · CPC title
comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title
wherein the TFTs are in active matrices · CPC title
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- What does patent US2016211384A1 cover?
- In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×10 15 cm −3 or less, and a mobility satisfies 15…
- Who is the assignee on this patent?
- Samsung Display Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6755. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jul 21 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).