Wafer inspection with focus volumetric method

Patent metadata

Field	Value
Publication number	US-2016209334-A1
Application number	US-201615001158-A
Country	US
Kind code	A1
Filing date	Jan 19, 2016
Priority date	Jan 21, 2015
Publication date	Jul 21, 2016
Grant date	—

Abstract

Disclosed are methods and apparatus for detecting defects in a semiconductor sample. An inspection tool is used to collect intensity data sets at a plurality of focus settings from each of a plurality of xy positions of the sample. A polynomial equation having a plurality of coefficients is extracted for each of the xy position's collected intensity data sets as a function of focus setting. Each of the coefficients' set of values for the plurality of xy positions is represented with a corresponding coefficient image plane. A target set of coefficient image planes and a reference set of coefficient image planes are then analyzed to detect defects on the sample.

First claim

1 . A method for detecting defects on a semiconductor sample, the method comprising:
using an inspection tool to collect intensity data sets at a plurality of focus settings from each of a plurality of xy positions of the sample; extracting a polynomial equation having a plurality of coefficients for each of the xy position's collected intensity data sets as a function of focus setting; representing each of the coefficients' set of values for the plurality of xy positions with a corresponding coefficient image plane; and analyzing a target set of coefficient image planes and a reference set of coefficient image planes to detect defects on the sample.

2 . The method of claim 1 , wherein intensity data is collected at the plurality of focus settings from a first set of one or more swaths before a next set of one or more swaths, wherein a number of the swaths in the first and next swaths, from which the intensity data is collected, is selected to be less than a thermal expansion time for affecting an actual focus position.

3 . The method of claim 2 , wherein the number of swaths comprises a first and second swath.

4 . The method of claim 3 , further comprising:
collecting real-time xy and z encoder position data from the inspection tool; and prior to extracting the polynomial equation for each of the xy positions' collected intensity data sets, aligning the collected intensity data from each focus setting based on the collected real-time xy position data.

5 . The method of claim 4 , wherein intensity data is collected from the first and second swath of xy positions at the plurality of focus settings before the aligning operation is performed.

6 . The method of claim 2 , further comprising
initiating recording of xy encoder position data into an encoder buffer prior to collect intensity data from a first one of the swaths at a first one of the focus settings, while the inspection tool's stage is turning around to setup for collecting intensity data from a second one of the swaths at the first focus setting, copying the xy encoder position data from the encoder buffer into a system memory for accessing for use in the aligning operation and then initiating recording of xy encoder position data into the encoder buffer prior to collecting intensity data from the second swath; while the inspection tool's stage is turning around to setup for collecting intensity data from the first swath at a second one of the focus settings after collecting intensity data from the second swath, copying the xy encoder position data from the encoder buffer into a system memory for accessing for use in the aligning operation and then initiating recording of xy encoder position data into the encoder buffer prior to collected intensity data from the first swath at the second focus setting; and repeating the operations of initiating recording and copying for subsequent pairs of swaths at each of the focus settings.

7 . The method of claim 1 , wherein analyzing is performed by:
calculating a plurality of difference coefficient image planes having a plurality of difference coefficient values for each coefficient by subtracting each of the target set from each of the reference set; and analyzing the difference coefficient image planes to detect defects.

8 . The method of claim 7 , wherein the difference coefficient image planes are analyzed by plotting an image point for the difference coefficient values at each xy position from the difference coefficient image planes into a scatter plot having an axis for each coefficient and clustering such scatter plot's image points into clusters of defects of interest image points, nuisance image points, or background image points.

9 . The method of claim 7 , wherein the difference coefficient image planes are analyzed by projecting an image point for the difference coefficient values for each xy position from the difference coefficient image planes onto a unit sphere and clustering such projected image points into clusters of defects of interest image points, nuisance image points, or background image points.

10 . The method of claim 7 , further comprising:
generating a plurality of difference images from intensity data sets collected from a target and a reference at each focus plane; combining the difference images to form a fused image across focus; and analyzing the fused image for defect detection.

11 . The method of claim 7 , further comprising:
grouping the coefficients with similar values together so as to form a plurality of different segments, wherein each segment corresponds to different portion of an actual device structure; analyzing the different segments with different stringency for detecting defects based on which type of actual devices correspond to the different segments.

12 . The method of claim 1 , further comprising analyzing a difference between intensity changes as a function of focus setting changes for each xy position in a second target set of intensity data sets and a second reference set of intensity data sets.

13 . The method of claim 1 , wherein the focus settings are comprised of pairs of focus setting, wherein each pair of focus setting is separated by a step value that is within a fraction of the depth of focus of the inspection system.

14 . An inspection system for inspecting a semiconductor sample, comprising:
an illumination optics module for generating and directing an incident beam towards a semiconductor sample at a plurality of focus settings; a collection optics module for collecting intensity data sets at a plurality of focus settings from each of a plurality of xy positions of the sample in response to the incident beam; and a controller that is configured to perform the following operations:
extracting a polynomial equation having a plurality of coefficients for each of the xy position's collected intensity data sets as a function of focus setting;
representing each of the coefficients' set of values for the plurality of xy positions with a corresponding coefficient image plane; and
analyzing a target set of coefficient image planes and a reference set of coefficient image planes to detect defects on the sample.

15 . The inspection system of claim 14 , wherein intensity data is collected at the plurality of focus settings from a first set of one or more swaths before a next set of one or more swaths, wherein a number of the swaths in the first and next swaths, from which the intensity data is collected, is selected to be less than a thermal expansion time for affecting an actual focus position.

16 . The inspection system of claim 15 , wherein the number of swaths comprises a first and second swath.

17 . The inspection system of claim 16 , wherein the controller is further configured for:
collecting real-time xy and z encoder position data from the inspection tool; and prior to extracting the polynomial equation for each of the xy positions' collected intensity data sets, aligning the collected intensity data from each focus setting based on the collected real-time xy position data.

18 . The inspection system of claim 15 , wherein the controller is further configured for:
initiating recording of xy encoder position data into an encoder buffer prior to collect intensity data from a first one of the swaths at a first one of the focus settings, while the inspection tool's stage is turning around to setup for collecting intensity data from a second one of the swaths at the first focus setting, copying the xy encoder position data from the encoder buffer into a s

Assignees

• Kla Tencor Corp

Inventors

• Chen Grace H
• Wells Keith Buckley
• Huber Markus B
• Oh Se Baek

Classifications

• G01N21/8851 Primary

  Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges (G01N21/8806 and G01N21/93 - G01N21/95692 take precedence; optical measurement of dimensions G01B11/00; optical scanning G02B26/10; image transformation G06T3/00; computerised image enhancement G06T5/00; image processing per se for flaw detection G06T7/0002) · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01N2021/8887

  based on image processing techniques · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/235

  comprising optical enhancement of defects or not-directly-visible states · CPC title