Cleaning liquid for lithography and method for forming wiring

Patent metadata

Field	Value
Publication number	US-2016208201-A1
Application number	US-201615084295-A
Country	US
Kind code	A1
Filing date	Mar 29, 2016
Priority date	Jun 11, 2012
Publication date	Jul 21, 2016
Grant date	—

Abstract

A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

First claim

What is claimed is:

1 . A method of cleaning a semiconductor device, comprising cleaning the semiconductor device with a cleaning liquid comprising an alkali or an acid, a solvent, and a silicon compound that generates a silanol group through hydrolysis.

2 . The method of claim 1 , wherein the silicon compound is a alkoxysilane represented by the following formula (1) or a partial hydrolysis condensate thereof:
R 1 4-n Si(OR 2 ) n   (1)
Wherein R1 represents an organic group, R2 represents an alkyl group having 1 to 4 carbon atoms, and n is an integer of 1 to 4.

3 . The method of claim 1 , wherein the amount of the silicon compound is 5% by mass or less.

4 . The method of claim 1 , wherein the alkali includes a quaternary ammonium hydroxide.

5 . The method of claim 4 , wherein the quaternary ammonium hydroxide is a compound represented by the following general formula (2):

Wherein R3 to R6 each independently represents an alkyl, aryl, aralkyl or hydroxyalkyl group having 1 to 16 carbon atoms.

6 . The method of claim 4 , wherein the amount of the quaternary ammonium hydroxide is 0.05 to 10% by mass.

7 . The method of claim 4 , wherein the amount of the quaternary ammonium hydroxide is 0.1 to 5% by mass.

8 . The method of claim 1 , wherein the alkali includes an alkanolamine.

9 . The method of claim 8 , wherein the amount of the alkanolamine is 0.05 to 20% by mass.

10 . The method of claim 8 , wherein the amount of the alkanolamine is 0.1 to 10% by mass.

11 . The method of claim 1 , wherein the alkali includes a combination of a quaternary ammonium hydroxide and an inorganic base.

12 . The method of claim 1 , wherein the acid includes hydrofluoric acid.

13 . The method of claim 1 , wherein the amount of the acid is 1 ppm by mass to 10% by mass.

14 . The method of claim 1 , wherein the amount of the acid is 100 ppm by mass to 5% by mass.

15 . The method of claim 1 , wherein the solvent includes an organic solvent or a combination of an organic solvent and water.

16 . The method of claim 1 , wherein the solvent consists of an organic solvent.

17 . The method of claim 1 , wherein the amount of the solvent is 1 to 99.7% by mass.

18 . The method of claim 1 , wherein the cleaning liquid consists essentially of the alkali or the acid, the solvent, the silicon compound, optionally an anticorrosive agent and optionally a surfactant.

19 . The method of claim 1 , wherein the semiconductor device is a multilayer laminate including a low dielectric constant layer.

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Kumagai Tomoya
• Eto Takahiro

Classifications

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• C11D7/5009

  containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide · CPC title

• C11D7/3209

  Amines or imines with one to four nitrogen atoms; Quaternized amines · CPC title