Method for producing n-type group iii nitride single crystal, n-type group iii nitride single crystal, and crystal substrate
US-2016362815-A1 · Dec 15, 2016 · US
Method for producing gallium nitride crystal
US2016201215A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016201215-A1 |
| Application number | US-201414916055-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 3, 2014 |
| Priority date | Sep 9, 2013 |
| Publication date | Jul 14, 2016 |
| Grant date | — |
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Abstract
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[Object] To provide a production method capable of producing a gallium nitride crystal at a lower pressure. [Solution] Provided is a method for producing a gallium nitride crystal, the method including a step of heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react.
First claim
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1 . A method for producing a gallium nitride crystal, the method comprising a step of heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react. 2 . The method for producing a gallium nitride crystal according to claim 1 , wherein the iron nitride contains at least one of tetrairon mononitride, triiron mononitride, and diiron mononitride. 3 . The method for producing a gallium nitride crystal according to claim 1 , wherein the reaction temperature is equal to or more than 500° C. and equal to or less than 1000° C., and the method further comprises a step of keeping the metal gallium and the iron nitride at a temperature in a range of the reaction temperature after the metal gallium and the iron nitride are heated to the reaction temperature. 4 . The method for producing a gallium nitride crystal according to claim 1 , wherein the metal gallium and the iron nitride are heated using a crucible made of boron nitride as a vessel. 5 . The method for producing a gallium nitride crystal according to claim 1 , wherein a proportion of the number of moles of an iron element in the iron nitride to the total number of moles of the metal gallium and the iron element in the iron nitride is equal to or more than 0.1% and equal to or less than 50%. 6 . The method for producing a gallium nitride crystal according to any one of claim 1 , wherein, when the reaction temperature is denoted by T [° C.], a proportion X [%] of the number of moles of an iron element in the iron nitride to the total number of moles of the metal gallium and the iron element in the iron nitride satisfies Mathematical Formula 1 below: X≦− 1.44×10-2× T+ 14.4 Mathematical Formula 1.
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Classifications
Nitrides · CPC title
being crystalline insulating materials · CPC title
using solutions · CPC title
Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) · CPC title
Micrometer sized, i.e. from 1-100 micrometer · CPC title
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- What does patent US2016201215A1 cover?
- [Object] To provide a production method capable of producing a gallium nitride crystal at a lower pressure. [Solution] Provided is a method for producing a gallium nitride crystal, the method including a step of heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react.
- Who is the assignee on this patent?
- Dexerials Corp
- What technology area does this patent fall under?
- Primary CPC classification C30B9/00. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Jul 14 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).