Substrate Processing Apparatus, Gas Dispersion Unit, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium

Patent metadata

Field	Value
Publication number	US-2016201193-A1
Application number	US-201514669982-A
Country	US
Kind code	A1
Filing date	Mar 26, 2015
Priority date	Jan 9, 2015
Publication date	Jul 14, 2016
Grant date	—

Abstract

Characteristics of a film formed on a substrate and a manufacturing throughput can be improved. A substrate processing apparatus includes a process chamber configured to process a substrate; a substrate placement unit; and a gas dispersion unit, the gas dispersion unit including: a first supply region facing the substrate and including a first gas dispersion hole configured to supply a first gas and a second gas dispersion hole configured to supply a second gas; and a second supply region facing a portion of a surface of the substrate placement unit outer than a portion of the surface of the substrate placement unit occupied by the substrate and including a third gas dispersion hole having a diameter greater than that of the second gas dispersion hole and configured to supply the second gas.

First claim

1 . A substrate processing apparatus comprising:
a process chamber configured to process a substrate; a substrate placement unit comprising: a substrate placement surface occupied by the substrate placed thereon; and an outer circumferential surface outside the substrate placement surface; and a shower head comprising:
a first supply region facing the substrate and including a first gas dispersion hole configured to supply a first gas and a second gas dispersion hole configured to supply a second gas;
a second supply region including a third gas dispersion hole configured to supply the second gas, wherein the third gas dispersion hole faces the outer circumferential surface and has a diameter greater than that of the second gas dispersion hole;
a first buffer space connected to the first gas dispersion hole;
a second buffer space connected to the second gas dispersion hole and the third gas dispersion hole; and
a gas guide having a hole connected to a gas inlet configured to supply the second gas, the gas guide having a conical shape where a diameter thereof increases toward the substrate placed on the substrate placement unit wherein an outer circumference at a lower end of the gas guide is outer than the third gas dispersion hole.

2 . The substrate processing apparatus of claim 1 , wherein the second supply region further includes a fourth gas dispersion hole configured to supply the first gas, wherein the fourth gas dispersion hole has a diameter greater than that of the first gas dispersion hole.

3 . (canceled)

4 . The substrate processing apparatus of claim 2 , wherein the fourth gas dispersion hole is connected to first buffer space.

5 . (canceled)

6 . The substrate processing apparatus of claim 4 , wherein the gas inlet is configured to supply the second gas to a center portion of the second buffer space.

7 . (canceled)

8 . The substrate processing apparatus of claim 4 , further comprising:
a first gas supply unit configured to supply the first gas into the first buffer space; a second gas supply unit configured to supply the second gas into the second buffer space; and a control unit configured to control the first gas supply unit and the second gas supply unit to alternately supply the first gas and the second gas.

9 . The substrate processing apparatus of claim 1 , wherein an adsorbability of the second gas is higher than that of the first gas.

10 . The substrate processing apparatus of claim 1 , wherein the first gas comprises a source gas and the second gas comprises a reactive gas.

11 . A shower head configured to supply a gas into a process chamber and disposed above a substrate placement unit having a substrate placement surface occupied by a substrate placed thereon and an outer circumferential surface outer than the substrate placement surface, the shower head comprising:
a first supply region facing the substrate and including a first gas dispersion hole configured to supply a first gas and a second gas dispersion hole configured to supply a second gas; a second supply region including a third gas dispersion hole configured to supply the second gas, wherein the third gas dispersion hole faces the outer circumferential surface and has a diameter greater than that of the second gas dispersion hole; a first buffer space connected to the first gas dispersion hole; a second buffer space connected to the second gas dispersion hole and the third gas dispersion hole; and a gas guide having a hole connected to a gas inlet configured to supply the second gas, the gas guide having a conical shape where a diameter thereof increases toward the substrate placed on the substrate placement unit wherein an outer circumference at a lower end of the gas guide is outer than the third gas dispersion hole.

12 . The shower head of claim 11 , wherein the second supply region further includes a fourth gas dispersion hole configured to supply the first gas, wherein the fourth gas dispersion hole has diameter greater than that of the first gas dispersion hole.

13 . (canceled)

14 . The shower head of claim 12 , wherein the fourth gas dispersion hole is connected to the first buffer space.

15 . (canceled)

16 . The shower head of claim 14 , wherein the gas inlet is configured to supply the second gas to a center portion of the second buffer space.

17 . The shower head of claim 11 , wherein an adsorbability of the second gas is higher than that of the first gas.

Assignees

• Hitachi Int Electric Inc

Inventors

• Saido Shuhei

Classifications

• C23C16/34 Primary

  Nitrides {(C23C16/303 takes precedence)} · CPC title

• C23C16/458

  characterised by the method used for supporting substrates in the reaction chamber · CPC title

• C23C16/455 Primary

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• C23C16/45574 Primary

  Nozzles for more than one gas · CPC title