Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors

Patent metadata

Field	Value
Publication number	US-2016200943-A1
Application number	US-201414905703-A
Country	US
Kind code	A1
Filing date	Jul 1, 2014
Priority date	Jul 11, 2013
Publication date	Jul 14, 2016
Grant date	—

Abstract

A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

First claim

1 . A chemical-mechanical polishing (CMP) composition comprising:
(A) one or more compounds of formula (1):

wherein the pairs of dashed lines in formula (1) either each represent a double bond or each represent a single bond, wherein
(i) when each pair of dashed lines in formula (1) represents a double bond then one of R 1 and R 2 is hydrogen and the other of R 1 and R 2 is selected from the group consisting of chlorine, bromine, alkyl with three to six carbon atoms, benzoyl and —COOR 3 , wherein R 3 is selected from the group consisting of alkyls with three to six carbon atoms or R 3 is a substituent comprising a structural unit selected from the group consisting of —(CH 2 —CH 2 —O) n —H and —(CH 2 —CH 2 —O) n —CH 3 , wherein n in each case is an integer in the range of from 1 to 15, or R 1 and R 2 are both independently selected from the group consisting of bromine and chlorine, and
(ii) when each pair of dashed lines in formula (1) represents a single bond then R 1 and R 2 are hydrogen, or one of R 1 and R 2 is hydrogen and the other of R 1 and R 2 is selected from the group consisting of chlorine, bromine, alkyl with three to six carbon atoms, benzoyl and —COOR 3 wherein R3 is selected from the group consisting of alkyls with three to six carbon atoms or R 3 is a substituent comprising a structural unit selected from the group consisting of —(CH 2 —CH 2 —O) n —H and —(CH 2 —CH2-O) n —CH 3 , wherein n in each case is an integer in the range of from 1 to 15, or R 1 and R 2 are both independently selected from the group consisting of bromine and chlorine; and
(B) inorganic particles, organic particles, or a composite or mixture thereof wherein the total amount of cations selected from the group consisting of magnesium and calcium is less than 1 ppm based on the total weight of the respective CMP composition.

2 . The chemical-mechanical composition according to claim 1 , wherein (A) the one or at least one of the more than one compounds of formula (1) is selected from the group consisting of:
5-bromo-1H-benzotriazole, 5-tert-butyl-1H-benzotriazole, 5-(benzoyl)-1H-benzotriazole, 5,6-dibromo-1H-benzotriazole, 5-chloro-1H-benzotriazole, 5-sec-butyl-1H-benzotriazole, and 4,5,6,7-tetrahydro-1H-benzotriazole.

3 . The chemical-mechanical polishing (CMP) composition according to claim 1 , wherein the particles of constituent (B) are particles selected from the group consisting of alumina, ceria, copper oxide, iron oxide, nickel oxide, manganese oxide, silica, silicon nitride, silicon carbide, tin oxide, titania, titanium carbide, tungsten oxide, yttrium oxide, zirconia and mixtures and composites thereof.

4 . The chemical-mechanical polishing (CMP) composition according to claim 1 , further comprising
(C) one or more complexing agents selected from the group consisting of inorganic acids and their salts and organic acids and their salts.

5 . The chemical-mechanical polishing (CMP) composition according to claim 1 , further comprising
(D) one or more non-ionic surfactants.

6 . The chemical-mechanical polishing (CMP) composition according to claim 1 , further comprising
(E) one or more alcohols.

7 . The chemical-mechanical polishing (CM P) composition according to claim 1 , further comprising
(F) one or more oxidizing agents.

8 . The chemical-mechanical polishing (CMP) composition according to claim 1 , further comprising
(I) one or more buffers.

9 . The chemical-mechanical polishing (CMP) composition according to claim 1 having a pH value in the range of from 6 to 14.

10 . The chemical-mechanical polishing (CMP) composition according to claim 9 ,
wherein the chemical-mechanical polishing composition is obtainable by mixing (H), which is one or more pH adjusting agents, with the constituents (A), (B) and optionally one, more or all of constituents (C), (D), (E), (F) and (I) of the chemical-mechanical polishing composition.

11 . The chemical-mechanical polishing (CMP) composition according to claim 1 , comprising
(A) a total amount of one or more compounds of formula (1) in a range of from 0.0001% to 1 wt.-% based on the total weight of the respective CMP composition, and/or (B) a total amount of inorganic particles, organic particles, or a composite or mixture thereof in a range of from 0.002 to 10 wt.-% based on the total weight of the respective CMP composition, and/or (C) a total amount of one or more complexing agents selected from the group of organic acids and salts thereof in a range of from 0.001 to 10 wt.-% based on the total weight of the respective CMP composition, and/or (D) a total amount of one or more non-ionic surfactants in a range of from 0.00001 to 10 wt.-% based on the total weight of the respective CMP composition, and/or (E) a total amount of one or more alcohols in a range of from 0.001 to 10 wt.-% based on the total weight of the respective CMP composition, and/or (F) a total amount of one or more oxidizing agents in a range of from 0.01 to 20 wt.-% based on the total weight of the respective CMP composition, and/or (I) a total amount of one or more buffers in a range of from 0.001 to 10 wt.-% based on the total weight of the respective CMP composition.

12 . The chemical-mechanical polishing (CMP) composition according to claim 1 , wherein the CMP composition contains cations selected from the group consisting of magnesium and calcium in a total amount of less than 0.9 ppm based on the total weight of the respective CMP composition.

13 . A process for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence of a chemical mechanical polishing (CMP) composition as defined in claim 1 .

14 . The process according to claim 13 , wherein the substrate comprises a surface region consisting of tantalum or tantalum nitride or of a tantalum alloy and/or a surface region consisting of copper or of a copper alloy.

15 . A method for polishing or inhibiting corrosion comprising contacting an object in need of polishing or subject to corrosion with a compound of formula (1):

wherein the pairs of dashed lines in formula (1) either each represent a double bond or each represent a single bond,
wherein
(i) when each pair of dashed lines in formula (1) represents a double bond then one of R 1 and R 2 is hydrogen and the other of R 1 and R 2 is selected from the group consisting of bromine, alkyl with three to six carbon atoms, benzoyl and —COOR 3 wherein R 3 is selected from the group consisting of alkyls with three to six carbon atoms or R 3 is a substituent comprising a structural unit selected from the group consisting of —(CH 2 —CH 2 —O) n —H and —(CH 2 —CH 2 —O) n —CH 3 , wherein n in each case is an integer in the range of from 1 to 15, or R 1 and R 2 are both independently selected from the group consisting of bromine and chlorine, and
(ii) when each pair of dashed lines in formula (1) represents a single bond then R 1 and R 2 are hydrogen, or one of R and R 2 is hydrogen and the other of R 1 and R 2 is selected from the group consisting of chlorine, bromine, alkyl with three to six carbon atoms, benzoyl and —COOR 3 wherein R 3 is selected from the group consisting of alkyls with three to six carbon atoms or R 3 is a substituent comprising a structural unit selected from the group consisting of —(CH 2 —CH 2 —O

Assignees

• Basf Se

Inventors

• Reichardt Robert
• Kaller Martin
• Lauter Michael
• Li Yuzhuo
• Klipp Andreas

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• C09K3/14

  Anti-slip materials; Abrasives {(products specifically intended for the fabrication of abrasive tools, blocks or papers, or for operations of the kind of sand-blasting and barrelling B24B31/14, B24C1/00; polishing compositions containing abrasive or grinding agents C09G1/02; friction compositions for brakes or clutches F16D69/02; polishing of semi-conductors H10P52/40)} · CPC title