Copolymer for semiconductor lithography, resist composition, and method for manufacturing substrate

Patent metadata

Field	Value
Publication number	US-2016200849-A1
Application number	US-201414912798-A
Country	US
Kind code	A1
Filing date	Sep 3, 2014
Priority date	Sep 3, 2013
Publication date	Jul 14, 2016
Grant date	—

Abstract

A copolymer for lithography having a turbidity Th(80) of 1.0 NTU or more and 4.6 NTU or less and a turbidity Tm(80) of 1.0 NTU or more and 3.8 NTU or less, in which this turbidity Th(80) is a turbidity of a PGMEA solution when n-heptane in an amount to be 80% of (X)h is added to this PGMEA solution where (X)h denotes an amount of n-heptane added to have a turbidity of 10 NTU when n-heptane is added to the PGMEA solution containing this copolymer for lithography at 20 wt % with respect to a total mass of this PGMEA solution; and this turbidity Tm(80) is a turbidity of a PGMEA solution when methanol in an amount to be 80% of (X)m is added to this PGMEA solution where (X)m denotes an amount of methanol added to have a turbidity of 5.0 NTU when methanol is added to this PGMEA solution containing this copolymer for lithography at 20 wt % with respect to a total mass of this PGMEA solution.

First claim

1 . A copolymer for lithography having a turbidity Th(80) of 1.0 NTU or more and 4.6 NTU or less and a turbidity Tm(80) of 1.0 NTU or more and 3.8 NTU or less, wherein
the turbidity Th(80) is a turbidity of a PGMEA solution when n-heptane in an amount to be 80% of (X)h is added to the PGMEA solution where (X)h denotes an amount of n-heptane added to have a turbidity of 10 NTU when n-heptane is added to the PGMEA solution containing the copolymer for lithography at 20 wt % with respect to a total mass of the PGMEA solution; and the turbidity Tm(80) is a turbidity of a PGMEA solution when methanol in an amount to be 80% of (X)m is added to the PGMEA solution where (X)m denotes an amount of methanol added to have a turbidity of 5.0 NTU when methanol is added to the PGMEA solution containing the copolymer for lithography at 20 wt % with respect to a total mass of the PGMEA solution.

2 . The copolymer for lithography according to claim 1 , comprising an acid leaving group.

3 . A copolymer for lithography obtained by polymerizing at least one monomer comprising an acid leaving group and at least one kind of monomer which does not contain acid leaving group,
wherein: N(v1)/Nave of the copolymer for lithography is from 1.01 to 1.09, a turbidity Th(80) is 1.0 NTU or more and 4.7 NTU or less, and a turbidity Tm(80) is 1.0 NTU or more and 3.9 NTU or less; N(v1)/Nave is a numerical value obtained by dividing N(v1) by Nave where a ratio of the number of moles of a constitutional unit containing an acid leaving group with respect to the number of total moles of constitutional units constituting a copolymer contained in a first fraction that is most previously eluted among five fractions of an eluate divided in order of elution so as to have equal volumes, the eluate providing a peak attributed to the copolymer in an elution curve obtained by gel permeation chromatography (GPC), is denoted as N(v 1 ) mol % and a ratio of the number of moles of a constitutional unit containing an acid leaving group with respect to the number of total moles of constitutional units constituting the copolymers contained in all of the five fractions is denoted as N ave mol %; the turbidity Th(80) is a turbidity of a PGMEA solution when n-heptane in an amount to be 80% of (X)h is added to the PGMEA solution where (X)h denotes an amount of n-heptane added to have a turbidity of 10 NTU when n-heptane is added to the PGMEA solution containing the copolymer for lithography at 20 wt % with respect to a total mass of the PGMEA solution; and the turbidity Tm(80) is a turbidity of a PGMEA solution when methanol in an amount to be 80% of (X)m is added to the PGMEA solution where (X)m denotes an amount of methanol added to have a turbidity of 5.0 NTU when methanol is added to the PGMEA solution containing the copolymer for lithography at 20 wt % with respect to a total mass of the PGMEA solution.

4 . The copolymer for lithography according to claim 2 , wherein the acid leaving group is a (meth)acrylic acid ester residue having a tertiary carbon atom at a bonding site with a (meth)acryloyloxy group.

5 . The copolymer for lithography according to claim 2 , wherein a constitutional unit having the acid leaving group is at least one selected from the group consisting of a constitutional unit units represented by Formulas (i) to (iv):

wherein:
R 31 , R 32 , R 33 , and R 34 each independently represent a hydrogen atom or a methyl group;
R 1 , R 4 , and R 5 each independently represent an alkyl group having from 1 to 5 carbon atoms;
R 2 and R 3 each independently represent an alkyl group having from 1 to 3 carbon atoms;
X 1 , X 2 , X 3 , and X 4 each independently represent an alkyl group having from 1 to 6 carbon atoms;
n1, n2, n3, and n4 each independently represent an integer from 0 to 4;
a plurality of X 1 , X 2 , X 3 , or X 4 are present in one constitutional unit in a case in which n1, n2, n3, or n4 is 2 or more, and the plurality of X 1 , X 2 , X 3 , and X 4 may be the same as or different from one another;
R 331 , R 332 , R 333 , and R 334 each independently represent a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms;
Z 1 and Z 2 each independently represent —O—, —S—, —NH—, or an alkylene group having from 1 to 6 carbon atoms;
q represents 0 or 1; and
r represents an integer from 0 to 2.

6 . The copolymer according to claim 2 , further comprising a constitutional unit having a lactone skeleton.

7 . The copolymer for lithography according to claim 2 , further comprising a constitutional unit comprising at least one of —C(CF 3 ) 2 —OH, a hydroxyl group, a cyano group, a methoxy group, a carboxy group, and an amino group.

8 . A resist composition, comprising the copolymer of claim 1 and a compound which generates an acid by irradiation with an actinic ray or radiation.

9 . A method for manufacturing a substrate having a pattern formed thereon, the method comprising:
coating the resist composition according to claim 8 on a substrate to be processed; exposing the substrate to light having a wavelength of 250 nm or less; and developing the substrate with a developing solution.

Assignees

• Mitsubishi Rayon Co

Inventors

• Yasuda Atsushi
• CHUJO Miho

Classifications

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• G03F7/0048

  characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents · CPC title

• C08F2/00

  Processes of polymerisation · CPC title

• G03F7/0382

  the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title