Substrate structure and method for preparing the same
US-2016215394-A1 · Jul 28, 2016 · US
US2016197292A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016197292-A1 |
| Application number | US-201414909941-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 30, 2014 |
| Priority date | Sep 30, 2013 |
| Publication date | Jul 7, 2016 |
| Grant date | — |
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Provided are a substrate for an organic electronic device (OED) and a use thereof. Provided is a substrate for a device having excellent durability by preventing interlayer delamination occurring due to internal stress in a structure in which an organic material and an inorganic material are mixed. In addition, provided is an OED having another required physical property such as excellent light extraction efficiency using the substrate, as well as the excellent durability.
Opening claim text (preview).
What is claimed is: 1 . A substrate for an organic electronic device (OED), comprising: a flexible base film; an inorganic material layer present on the base film; and an elastic layer present on, under, or in the inorganic material layer, and including a material having an elastic modulus at 23° C. of 20 to 400 GPa. 2 . The substrate according to claim 1 , wherein the base film has a haze of 3 to 30%. 3 . The substrate according to claim 1 , wherein the base film has a refractive index with respect to light having a wavelength of 550 nm of 1.7 or more. 4 . The substrate according to claim 1 , wherein the inorganic material layer includes first and second sub layers, each having a thickness of 7 nm or less. 5 . The substrate according to claim 4 , wherein the inorganic material layer has a thickness of 10 to 100 nm. 6 . The substrate according to claim 1 , wherein the inorganic material layer and the base film have a difference in refractive index of 1 or less. 7 . The substrate according to claim 1 , wherein the inorganic material layer does not include a layer having a thickness of more than 7 nm. 8 . The substrate according to claim 4 , wherein the first sub layer and the second sub layer are stacked in contact with each other, and include different oxide layers, nitride layers, or oxynitride layers, respectively. 9 . The substrate according to claim 4 , wherein the first sub layer has a refractive index of 1.4 to 1.9, and the second sub layer has a refractive index of 2.0 to 2.6. 10 . The substrate according to claim 1 , wherein the elastic layer has a refractive index of 1.7 or less. 11 . The substrate according to claim 1 , wherein the elastic layer includes TiO 2 , Si 3 N 4 , MgO, Al 2 O 3 , ZnO, or ZrO 2 . 12 . The substrate according to claim 1 , wherein the elastic layer is an molecular layer deposition (MLD) layer including a metal or non-metal chelate compound and alkylene glycol, or the reaction product. 13 . The substrate according to claim 1 , wherein the elastic layer is an initiated chemical vapor deposition (iCVD) layer including a polymerization unit of a compound represented by Formula 1 or 2: where R 1 , R d , and R e are each independently hydrogen, a hydroxyl group, an epoxy group, an alkoxy group, or a monovalent hydrocarbon group, at least one of R 1 is an alkenyl group, at least one of R d and R e is an alkenyl group, n is a number of 1 to 10, and o is a number of 3 to 10. 14 . An organic electronic device (OED), comprising: the substrate for an OED of claim 1 ; and a device region having a first electrode layer, an organic material layer, and a second electrode layer, which are present on an inorganic material layer of the substrate. 15 . A light source for a display, comprising: the OED of claim 14 . 16 . A lighting device, comprising: the OED of claim 14 . 17 . A method of manufacturing the substrate for an OED of claim 1 , comprising: forming an elastic layer on, under, or in an inorganic material layer formed on a flexible base film. 18 . The method according to claim 17 , wherein the inorganic material layer is formed in a stack structure of first and second sub layers, each having a thickness of 7 nm or less, using atomic layer deposition (ALD). 19 . The method according to claim 17 , wherein the elastic layer is formed by MLD or iCVD.
Deposition of materials, e.g. coating, cvd, or ald · CPC title
specially adapted for making a layer stack of alternating different compositions or gradient compositions · CPC title
Chemical treatment or coating of shaped articles made of macromolecular substances (coating with metallic material C23C; electrolytic deposition of metals C25) · CPC title
Organic PV cells · CPC title
Atomic layer deposition [ALD] · CPC title
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