Photoelectric conversion device and fabrication method therefor

Patent metadata

Field	Value
Publication number	US-2016197281-A1
Application number	US-201615070650-A
Country	US
Kind code	A1
Filing date	Mar 15, 2016
Priority date	Sep 27, 2013
Publication date	Jul 7, 2016
Grant date	—

Abstract

In order to form a photoelectric conversion layer of a photoelectric conversion element, mixed liquid including poly-[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl2′,1′,3′-benzothiadiazle)] as a p-type organic semiconductor material and a fullerene derivative as an n-type organic semiconductor material, which configure a bulk heterojunction are applied and dried. The dried substance is exposed in an atmosphere including vapor of a solvent that dissolves the p-type organic semiconductor material preferentially to the n-type organic semiconductor material.

First claim

What is claimed is:

1 . A fabrication method for a photoelectric conversion device, comprising:
forming a photoelectric conversion layer; wherein the forming a photoelectric conversion layer includes:
applying and drying mixed liquid including poly-[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl2′,1′,3′-benzothiadiazle)] as a p-type organic semiconductor material and a fullerene derivative as an n-type organic semiconductor material, which configure a bulk heterojunction; and
exposing the dried substance in an atmosphere including vapor of a solvent that dissolves the p-type organic semiconductor material preferentially to the n-type organic semiconductor material.

2 . The fabrication method for a photoelectric conversion device according to claim 1 , wherein tetrahydrofuran is used as the solvent.

3 . The fabrication method for a photoelectric conversion device according to claim 1 , wherein the fullerene derivative contains any one material selected from the group consisting of [6,6]-phenyl-C 71 -butyric acid methyl ester, [6,6]-phenyl-C 61 -butyric acid methyl ester and [6,6]-phenyl-C 85 -butyric acid methyl ester.

4 . The fabrication method for a photoelectric conversion device according to claim 1 , wherein, in the forming a photoelectric conversion layer, the n-type organic semiconductor material is at least partially crystallized by exposing the dried substance in the atmosphere including vapor of the solvent.

5 . The fabrication method for a photoelectric conversion device according to claim 1 , wherein, in the forming a photoelectric conversion layer, a photoelectric conversion layer having both of a diffraction peak corresponding to a (111) plane and another diffraction peak corresponding to a (11-1) plane in an X-ray diffraction profile of a simple substance of the n-type organic semiconductor material in an X-ray diffraction profile is formed by exposing the dried substance in the atmosphere including vapor of the solvent.

6 . The fabrication method for a photoelectric conversion device according to claim 1 , wherein, in the forming a photoelectric conversion layer, a photoelectric conversion layer including a region in which a ratio of the p-type organic semiconductor material is lower than an average ratio is formed at the surface side by exposing the dried substance in the atmosphere including vapor of the solvent; and
the fabrication method further comprises forming a negative electrode over the surface of the photoelectric conversion layer after the forming a photoelectric conversion layer.

7 . The fabrication method for a photoelectric conversion device according to claim 1 , further comprising forming a positive electrode and forming a positive electrode side buffer layer before the forming a photoelectric conversion layer; wherein
in the forming a photoelectric conversion layer, a photoelectric conversion layer including a region in which a ratio of the p-type organic semiconductor material is higher than an average ratio at the side of the positive electrode side buffer layer and another region in which the ratio of the p-type organic semiconductor material is lower than the average ratio at the opposite side to the positive electrode side buffer layer is formed on the positive electrode side buffer layer.

8 . A photoelectric conversion device, comprising:
a positive electrode; a negative electrode; and a photoelectric conversion layer that is provided between the positive electrode and the negative electrode, includes a p-type organic semiconductor material and an n-type organic semiconductor material, which configure a bulk heterojunction, includes poly-[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl2′,1′,3′-benzothiadiazle)] as the p-type organic semiconductor material, and includes a fullerene derivative as the n-type organic semiconductor material and in which the n-type organic semiconductor material at least partially forms crystal.

9 . The photoelectric conversion device according to claim 8 , wherein the fullerene derivative includes any one material selected from the group consisting of [6,6]-phenyl-C 71 -butyric acid methyl ester, [6,6]-phenyl-C 61 -butyric acid methyl ester and [6,6]-phenyl-C 85 -butyric acid methyl ester.

10 . The photoelectric conversion device according to claim 8 , wherein the photoelectric conversion layer has, in an X-ray diffraction profile, both of a diffraction peak corresponding to a (111) plane and another diffraction peak corresponding to a (11-1) plane in an X-ray diffraction profile of a simple substance of the n-type organic semiconductor material.

11 . The photoelectric conversion device according to claim 8 , wherein the photoelectric conversion layer includes a region in which a ratio of the p-type organic semiconductor material is lower than an average ratio at the surface side; and
the negative electrode is provided over the surface of the photoelectric conversion layer.

12 . The photoelectric conversion device according to claim 8 , further comprising a positive electrode side buffer layer provided between the photoelectric conversion layer and the positive electrode; wherein
the photoelectric conversion layer includes a region in which a ratio of the p-type organic semiconductor material is higher than an average ratio at the side of the positive electrode side buffer layer and another region in which the ratio of the p-type organic semiconductor material is lower than the average ratio at the side of the negative electrode.

13 . The photoelectric conversion device according to claim 12 , wherein the positive electrode side buffer layer includes a material in which energy of the lowest unoccupied electron orbit is shallower than that of the n-type organic semiconductor material and energy of the highest unoccupied electron orbit is shallower than that of the p-type organic semiconductor material.

14 . The photoelectric conversion device according to claim 8 , further comprising a negative electrode side buffer layer provided between the photoelectric conversion layer and the negative electrode and including a material in which energy of the highest unoccupied electron orbit is deeper than that of the p-type organic semiconductor material and energy of the lowest unoccupied electron orbit is deeper than that of the n-type organic semiconductor material.

15 . The photoelectric conversion device according to claim 8 , further comprising a hole blocking layer provided between the photoelectric conversion layer and the negative electrode and including lithium fluoride or metallic calcium.

Assignees

• Fujitsu Ltd

Inventors

• Momose Satoru
• Yoshikawa Kota
• Doi Shuuichi

Classifications

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10K30/30

  comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains · CPC title

• H10K85/113

  Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene · CPC title

• H10K71/441 Primary

  in the presence of solvent vapors, e.g. solvent vapour annealing · CPC title

• H01L51/0047

  Electricity · mapped topic