Lighting emitting device with aligned-bonding and the manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2016197230-A1
Application number	US-201615007687-A
Country	US
Kind code	A1
Filing date	Jan 27, 2016
Priority date	Mar 5, 2012
Publication date	Jul 7, 2016
Grant date	—

Abstract

A method of manufacturing a light-emitting device comprises the steps of: providing a semiconductor light-emitting stack having a first connecting surface and a first alignment pattern; providing a substrate having a second connecting surface and a second alignment pattern; detecting the position of the first alignment pattern and the position of the second alignment pattern; and moving at least one of the substrate and the semiconductor light-emitting stack to make the first alignment pattern be aligned with the second alignment pattern.

First claim

What is claimed is:

1 . A method of manufacturing a light-emitting device, comprising the steps of:
providing a semiconductor light-emitting stack having a first connecting surface and a first alignment pattern; providing a substrate having a second connecting surface and a second alignment pattern; detecting the position of the first alignment pattern and the position of the second alignment pattern; and moving at least one of the substrate and the semiconductor light-emitting stack to make the first alignment pattern be aligned with the second alignment pattern.

2 . A method of manufacturing a light-emitting device according to claim 1 , wherein the step of moving at least one of the substrate and the semiconductor light-emitting stacked layer is to make the first alignment pattern be overlapped with and the second alignment pattern.

3 . A method of manufacturing a light-emitting device according to claim 1 , further comprises a step of bonding the semiconductor light-emitting stack and the substrate together under a temperature over 200° C.

4 . A method of manufacturing a light-emitting device according to claim 3 , wherein a bonding force for bonding the semiconductor light-emitting stack and the substrate together is not over 1164 Kg/cm2.

5 . A method of manufacturing a light-emitting device according to claim 1 , wherein the step of moving at least one of the substrate and the semiconductor light-emitting stack comprises moving linearly or rotating the substrate and the semiconductor light-emitting stack.

6 . A method of manufacturing a light-emitting device according to claim 1 , further comprising a step of catching a first image of the first alignment pattern and a second image of the second alignment pattern.

7 . A method of manufacturing a light-emitting device according to claim 6 , further comprising a step of comparing the first image and the second image.

8 . A method of manufacturing a light-emitting device according to claim 1 , wherein a first virtual vertical axis passing through the center of the first alignment pattern, a second virtual vertical axis passing through the center of the second alignment pattern, and an offset distance between the first virtual vertical axis and the second virtual vertical axis is smaller than 20 μm after the first alignment pattern being aligned with the second alignment pattern.

9 . A method of manufacturing a light-emitting device according to claim 1 , further comprising a step of providing a chamber, and the semiconductor light-emitting stack and the substrate are in the chamber.

10 . A method of manufacturing a light-emitting device according to claim 9 , further comprising providing an image deriving unit in the chamber for catching a first image of the first alignment pattern and a second image of the second alignment pattern.

11 . A method of manufacturing a light-emitting device according to claim 10 , further comprising a step of moving the image deriving unit out of the chamber after the first alignment pattern being aligned with the second alignment pattern.

12 . A method of manufacturing a light-emitting device according to claim 10 , wherein the image deriving unit is in the chamber after the first alignment pattern being aligned with the second alignment pattern.

13 . A method of manufacturing a light-emitting device according to claim 9 , further comprising a step of heating chamber over 200° C. after the first alignment pattern being aligned with the second alignment pattern.

14 . A method of manufacturing a light-emitting device according to claim 13 , further comprising a step of bonding the semiconductor light-emitting stack and the substrate together by a bonding force not over 1164 Kg/cm2.

Assignees

• Epistar Corp

Inventors

• Hsu Chia-Liang
• Chen Yi-Ming
• Chiu Hsin-Chih

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/53

  using optical controlling means · CPC title

• H10P72/50

  for positioning, orientation or alignment · CPC title

• B65G47/24

  orientating the articles · CPC title