Electrically programmable fuse structure and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-2016196946-A1
Application number	US-201514965674-A
Country	US
Kind code	A1
Filing date	Dec 10, 2015
Priority date	Jan 6, 2015
Publication date	Jul 7, 2016
Grant date	—

Abstract

A method for fabricating an electrically programmable fuse structure is provided. The method includes providing a substrate. The method also includes forming an anode and a cathode on the substrate. Further, the method includes forming a fuse between the anode and the cathode and having an anode-connecting-end connecting with the anode and a cathode-connecting-end connecting with the cathode over the substrate. Further, the method also includes forming a compressive stress region in the cathode-connecting-end, wherein the anode-connecting-end has a tensile stress region.

First claim

What is claimed is:

1 . A method for fabricating an electrically programmable fuse structure, comprising:
providing a substrate; forming an anode and a cathode on the substrate; forming a fuse between the anode and the cathode and having an anode-connecting-end connecting with the anode and a cathode-connecting-end connecting with the cathode over the substrate; and forming a compressive stress region in the cathode-connecting-end, wherein the anode-connecting-end has a tensile stress region.

2 . The method according to claim 1 , wherein:
the anode-connecting-end is lightly doped with one of phosphorous ions, arsenic ions and boron ions to form the tensile stress region in the anode-connecting-end.

3 . The method according to claim 2 , wherein:
a doping concentration of the compressive stress region is greater than a doping concentration of the tensile stress region.

4 . The method according to claim 3 , wherein:
a doping concentration difference between the compressive stress region and the tensile stress region is in a range of approximately 1E15 atom/cm 2 ˜1E17 atom/cm 2 .

5 . The method according to claim 1 , wherein forming the fuse further comprises:
forming a first material layer on the substrate; and forming a second material layer on first material layer, wherein the first material layer and the second material form the fuse.

6 . The method according to claim 5 , wherein:
the first material layer is a polysilicon layer; and the second material layer is a meal silicide layer.

7 . The method according to claim 6 , wherein:
the tensile stress region is formed in the metal silicide layer in the anode-connecting-end; and the compressive stress region is formed in the metal silicide layer in the cathode-connecting-end.

8 . The method according to claim 1 , wherein the compressive stress region is formed in the cathode connecting end by:
heavily doping the cathode-connecting-end.

9 . The method according to claim 8 , wherein:
the cathode-connecting-end is heavily doped by an ion implantation process to form the compressive region.

10 . The method according to claim 9 , wherein:
doping ions of the ion implantation process include one of tin ions, lead ions, arsenic ions, phosphorous ions, antimony ions, bismuth ions, sulfur ions, selenium ions, tellurium ions, polonium ions, bromide ions, and iodine ions.

11 . The method according to claim 1 , wherein forming the compressive stress region in the cathode-connecting-end further comprises:
forming a first mask layer exposing the cathode-connecting-end on the cathode, the anode and the fuse; and heavily doping the cathode-connecting-end using the first mask layer as a mask to form the tensile stress region in the cathode-connecting-end.

12 . The method according to claim 1 , further comprising:
forming a plurality of the first conductive vias and a plurality of second conductive vias on the cathode and the anode, respectively.

13 . An electrically programmable fuse structure, comprising:
a substrate having a surface; an anode formed on the surface of the substrate; a cathode formed on the surface of substrate; and a fuse formed on the surface of the substrate and having an anode-connecting-end having a tensile stress region and connecting with the anode, and a cathode-connecting-end having a compressive stress region and connecting with the cathode.

14 . The electrically programmable fuse structure according to claim 13 , wherein:
the cathode-connecting-end is doped to form the compressive stress region.

15 . The electrically programmable fuse structure according to claim 14 , wherein:
the cathode-connecting-end is doped with one of tin ions, lead ions, arsenic ions, phosphorous ions, antimony ions, bismuth ions, sulfur ions, selenium ions, tellurium ions, polonium ions, bromide ions, and iodine ions.

16 . The electrically programmable fuse structure according to claim 13 , wherein:
the anode-connecting-end of the fuse has an intrinsic tensile stress.

17 . The electrically programmable fuse structure according to claim 13 , wherein:
the anode-connecting-end of the fuse is doped to form the tensile stress region.

18 . The electrically programmable fuse structure according to claim 13 , wherein:
the cathode and the anode have one of a tapered shape and a rectangular shape.

19 . The electrically programmable fuse structure according to claim 13 , wherein the fuse further comprises:
a poly silicon layer; and a metal silicide layer, wherein the metal silicide layer of the cathode-connecting-end has the compressive stress; and the metal silicide layer of the anode-connecting-end has the tensile stress.

20 . The electrically programmable fuse structure according to claim 13 , wherein:
the anode, the cathode and the fuse are formed from a same material layer.

Assignees

• Semiconductor Mfg Int Shanghai

Inventors

• Gan Zhenghao

Classifications

• H10W20/493

  Fuses, i.e. interconnections changeable from conductive to non-conductive · CPC title

• H01H85/055 Primary

  Fusible members · CPC title

• C25D5/00 Primary

  Electroplating characterised by the process; Pretreatment or after-treatment of workpieces · CPC title

• C23C14/48

  Ion implantation · CPC title

• C23C14/34

  Sputtering · CPC title