Semiconductor power module and power conversion apparatus using the same

Patent metadata

Field	Value
Publication number	US-2016190915-A1
Application number	US-201514757466-A
Country	US
Kind code	A1
Filing date	Dec 23, 2015
Priority date	Dec 24, 2014
Publication date	Jun 30, 2016
Grant date	—

Abstract

A semiconductor power module with which it is possible to suppress the influence of noise given from a main terminal to a control terminal is provided. At least any one of main terminals (positive electrode terminal, negative electrode terminal, alternating current terminal) is so configured that the main terminal includes two parts extended in a common direction. The two parts are, for example, formed of a single component having such as a shape that the component is bifurcated from the outside toward the inside of the semiconductor power module or two different components. The two parts are so structured that the parts are extended in a common direction. Control terminals (gate signal terminal and emitter signal terminal) are so arranged that a laminated portion of the control terminals is sandwiched between one and the other of the two parts to configure the semiconductor power module.

First claim

1 . A semiconductor power module comprising:
a positive electrode terminal; a negative electrode terminal; an alternating current terminal; an emitter signal terminal; and a gate signal terminal, wherein at least any one of the positive electrode terminal, the negative electrode terminal, and the alternating current terminal includes two parts extended in a common direction, wherein the emitter signal terminal and the gate signal terminal include a laminated portion formed by laminating respective parts on the emitter signal terminal and the gate signal terminal together, and wherein the laminated portion is so placed as to be sandwiched between the two parts of at least any one of the positive electrode terminal, the negative electrode terminal, and the alternating current terminal.

2 . The semiconductor power module according to claim 1 ,
wherein the two parts are respectively formed of two different components.

3 . The semiconductor power module according to claim 2 ,
wherein the alternating current terminal is placed on a surface opposite a surface where the positive electrode terminal and the negative electrode terminal are placed.

4 . The semiconductor power module according to claim 3 ,
wherein a control terminal is placed between an area where the positive electrode terminal and the negative electrode terminal are placed and an area where the alternating current terminal is placed.

5 . The semiconductor power module according to claim 3 , further comprising:
a base on which the positive electrode terminal, the negative electrode terminal, the alternating current terminal, the emitter signal terminal, and the gate signal terminal are mounted in common, wherein the base, the gate signal wiring, and the emitter signal wiring are so arranged that the direction of the plane of the base and a loop of the gate signal wiring and the emitter signal wiring laminated together are orthogonal to each other.

6 . The semiconductor power module according to claim 3 ,
wherein an insulator is placed in at least either of between the positive electrode terminal and the negative electrode terminal laminated together and between the emitter signal wiring and the gate signal wiring.

7 . The semiconductor power module according to claim 1 ,
wherein the two parts are formed of one and the other of the bifurcation of a single component having such a shape that the component is bifurcated from the outside toward the inside of the semiconductor power module.

8 . The semiconductor power module according to claim 7 ,
wherein the alternating current terminal is placed on a surface opposite a surface where the positive electrode terminal and the negative electrode terminal are placed.

9 . The semiconductor power module according to claim 8 ,
wherein a control terminal is placed between an area where the positive electrode terminal and the negative electrode terminal are placed and an area where the alternating current terminal is placed.

10 . The semiconductor power module according to claim 8 ,
wherein the semiconductor power module is so configured that a base can be mounted, and wherein the gate signal wiring and the emitter signal wiring are so arranged that when the base is mounted, the direction of the plane of the base and a loop of the gate signal wiring and the emitter signal wiring laminated together are orthogonal to each other.

11 . The semiconductor power module according to claim 8 ,
wherein an insulator is placed in at least either of between the positive electrode terminal and the negative electrode terminal laminated together and between the emitter signal wiring and the gate signal wiring.

12 . A power conversion apparatus formed by arranging semiconductor power modules having a substantially rectangular shape in parallel in the direction of the short sides of the rectangle,
wherein the semiconductor power modules are semiconductor power modules according to claim 11 .

13 . The power conversion apparatus according to claim 12 ,
wherein a capacitor module is placed on the positive electrode terminal side or the negative electrode terminal side of the semiconductor power modules, and
wherein a gate wiring circuit board is provided directly over the semiconductor power modules.

Assignees

• Hitachi Power Semiconductor Device Ltd

Inventors

• Horiuchi Keisuke
• Kawase Daisuke
• Inaba Masamitsu
• Saito Katsuaki

Classifications

• H10W70/658

  for devices provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W44/501 Primary

  Inductive arrangements (H10W44/20 takes precedence) · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H10W76/15

  Containers comprising an insulating or insulated base · CPC title

• H10W72/60

  Strap connectors, e.g. thick copper clips for grounding of power devices · CPC title