Interconnect structure with misaligned metal lines coupled using different interconnect layer

Patent metadata

Field	Value
Publication number	US-2016190065-A1
Application number	US-201514978487-A
Country	US
Kind code	A1
Filing date	Dec 22, 2015
Priority date	Dec 26, 2014
Publication date	Jun 30, 2016
Grant date	—

Abstract

In some embodiments, an interconnect structure includes a first metal line, a second metal line and a first connection structure. The first metal line is formed in a first interconnect layer, extends in length substantially along a first direction and ends at a first end portion. The second metal line is formed in the first interconnect layer, starts from a second end portion and extends in length substantially along the first direction. The second metal line is misaligned with the first metal line in the first direction. The first connection structure couples the first metal line to the second metal line. The first connection structure includes a first end-to-end portion formed in a second interconnect layer different from the first interconnect layer, and is overlapped with the first end portion and the second end portion.

First claim

What is claimed is:

1 . An interconnect structure, comprising:
a first metal line formed in a first interconnect layer, extending in length substantially along a first direction and ending at a first end portion; a second metal line formed in the first interconnect layer, starting from a second end portion, extending in length substantially along the first direction and misaligned with the first metal line in the first direction; and a first connection structure coupling the first metal line to the second metal line, wherein
the first connection structure comprises a first end-to-end portion formed in a second interconnect layer different from the first interconnect layer, and being overlapped with the first end portion and the second end portion.

2 . The interconnect structure of claim 1 , wherein
the first end-to-end portion is a single damascene via.

3 . The interconnect structure of claim 1 , wherein
the first connection structure further comprises an additional portion formed in a layer different from the first interconnect layer and the second interconnect layer and coupled to the first end-to-end portion.

4 . The interconnect structure of claim 1 , wherein
the first end-to-end portion has a shape comprising at least a first corner and a second corner;
the first corner being bent from substantially along the first direction to substantially along a second direction substantially orthogonal to the first direction; and
the second corner being bent from substantially along the first direction to substantially along the second direction.

5 . The interconnect structure of claim 1 , wherein
the first end-to-end portion has a substantially rectangular shape having a width across a width of the first end portion and a width of the second end portion.

6 . The interconnect structure of claim 1 , wherein
the first end-to-end portion is a third metal line; and the first connection structure further comprises:
a first via which couples the first end-to-end portion to the first metal line; and
a second via which couples the first end-to-end portion to the second metal line.

7 . The interconnect structure of claim 6 , further comprising:
a width of the first via is wider than a width of the first end portion by at least about 10%.

8 . The interconnect structure of claim 1 , wherein
a width of the first end-to-end portion at where the first end-to-end portion is overlapped with the first end portion is wider than a width of the first end portion by at least about 10%.

9 . The interconnect structure of claim 1 , further comprising:
a third metal line formed in the first interconnect layer and extending in length substantially along the first direction, wherein
at least a portion of the first end portion is beyond the third metal line in the first direction.

10 . The interconnection structure of claim 1 , further comprising:
a third metal line formed in the first interconnect layer and adjacent to the first metal line, and extending in length substantially along the first direction; a fourth metal line formed in the first interconnect layer and adjacent to the second metal line, extending in length substantially along the first direction and aligned to the third metal line in the first direction; and a second connection structure coupling the third metal line to the fourth metal line using a third interconnect layer different from the first interconnect layer and the second interconnect layer.

11 . A semiconductor chip, comprising:
an array cell comprising:
a first metal line formed in a first interconnect layer and extending substantially along a first direction;
an accessing circuit configured to access the array cell and comprising:
a second metal line formed in the first interconnect layer and extending substantially along the first direction; and
a first connection structure coupling the first metal line to the second metal line using a second interconnect layer different from the first interconnect layer, wherein the coupled first metal line, second metal line and first connection structure serve as an accessing line of the array cell.

12 . The semiconductor chip of claim 11 , wherein
the first connection structure comprises a first end-to-end portion formed in the second interconnect layer; and the first end-to-end portion is overlapped with the first metal line and the second metal line.

13 . The semiconductor chip of claim 12 , wherein
the first connection structure further comprises an additional portion formed in a layer different from the first interconnect layer and the second interconnect layer and coupled to the first end-to-end portion.

14 . The semiconductor chip of claim 12 , wherein
the first end-to-end portion has a shape comprising at least a first corner, and a second corner; the first corner being bent from substantially along the first direction to substantially along a second direction substantially orthogonal to the first direction; and the second corner being bent from substantially along the first direction to substantially along the second direction.

15 . The semiconductor chip of claim 12 , wherein
the first end-to-end portion has a substantially rectangular shape having a width across a width of the first end portion and a width of the second end portion.

16 . The semiconductor chip of claim 12 , wherein
the first end-to-end portion is wider at where the first end-to-end portion is overlapped with the first metal line by at least about 10%.

17 . The semiconductor chip of claim 11 , wherein
the array cell further comprises a third metal line formed in the first interconnect layer and extending substantially along the first direction; at least a portion of the first metal line at where the first end-to-end portion is overlapped with the first metal line is beyond the third metal line in the first direction.

18 . The semiconductor chip of claim 11 , wherein
the first connection structure comprises a single damascene via which is overlapped with the first metal line and the second metal line.

19 . The semiconductor chip of claim 11 , wherein
the array cell further comprises a third metal line formed in the first interconnect layer and extending substantially along the first direction; the accessing circuit further comprises a fourth metal line formed in the first interconnect layer and extending substantially along the first direction; and the circuit further comprises a second connection structure coupling the third metal line to the fourth metal line using a third interconnect layer different from the first interconnect layer and the second interconnect layer for forming a power supply node for the array cell.

20 . The semiconductor chip of claim 11 , wherein
the first connection structure comprises a third metal line which is overlapped with the first metal line and the second metal line.

21 . A layout, comprising:
a first interconnect layer comprising:
a first metal line extending in length substantially along a first direction and ending at a first end portion;
a second metal line starting from a second end portion, extending in length substantially along the first direction and misaligned with the first metal line in the first direction; and
a second interconnect layer different from the first interconnect layer, wherein the second interconnect layer comprises:
a first shape overlapping with the first end portion and the second end portion.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Liaw Jhon Jhy
• Chen Yen-Huei

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10W20/0698

  Local interconnections · CPC title

• H10W20/427

  Power or ground buses · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title