Photoresist pattern trimming compositions and methods

Patent metadata

Field	Value
Publication number	US-2016187783-A1
Application number	US-201514971087-A
Country	US
Kind code	A1
Filing date	Dec 16, 2015
Priority date	Dec 31, 2014
Publication date	Jun 30, 2016
Grant date	—

Abstract

Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

First claim

What is claimed is:

1 . A photoresist pattern trimming composition, comprising: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group.

2 . The photoresist pattern trimming composition of claim 1 , wherein the fluorinated alcohol group comprises a fluorine atom bonded to a carbon at the alpha position of the alcohol hydroxyl.

3 . The photoresist pattern trimming composition of claim 1 , wherein the fluorinated alcohol group comprises a fluorinated group bonded pendant to a carbon at the alpha position of the alcohol hydroxyl.

4 . The photoresist pattern trimming composition of claim 1 , wherein the aromatic sulfonic acid comprises a hexafluoroalcohol group.

5 . The photoresist pattern trimming composition of claim 1 , wherein the aromatic sulfonic acid comprises a plurality of fluorinated alcohol groups.

6 . The photoresist pattern trimming composition of claim 1 , wherein the fluorinated alcohol group is bonded to an aromatic ring of the aromatic sulfonic acid through an ester group.

7 . The photoresist pattern trimming composition of claim 1 , wherein the aromatic sulfonic acid is chosen from the following acids:

8 . The photoresist pattern trimming composition of claim 1 , wherein the matrix polymer is a poly(meth)acrylate polymer.

9 . A method of trimming a photoresist pattern, comprising:
(a) providing a semiconductor substrate; (b) forming a photoresist pattern on the substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) coating a photoresist trimming composition of claim 1 on the substrate over the photoresist pattern; (d) heating the coated substrate, thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern.

10 . The method of claim 9 , wherein the photoresist pattern is formed in an immersion lithography process.

11 . The method of claim 9 , wherein the fluorinated alcohol group comprises a fluorine atom bonded to a carbon at the alpha position of the alcohol hydroxyl.

12 . The method of claim 9 , wherein the fluorinated alcohol group comprises a fluorinated group bonded pendant to a carbon at the alpha position of the alcohol hydroxyl.

13 . The method of claim 9 , wherein the aromatic sulfonic acid comprises a hexafluoroalcohol group.

14 . The method of claim 9 , wherein the aromatic sulfonic acid comprises a plurality of fluorinated alcohol groups.

15 . The method of claim 9 , wherein the fluorinated alcohol group is bonded to an aromatic ring of the aromatic sulfonic acid through an ester group.

16 . The method of claim 9 , wherein the aromatic sulfonic acid is chosen from the following acids:

17 . The method of claim 9 , wherein the matrix polymer is a poly(meth)acrylate polymer.

Assignees

• Rohm & Haas Elect Mat

Inventors

• Kaur Irvinder
• Liu Cong
• Rowell Kevin

Classifications

• G03F7/405

  Treatment with inorganic or organometallic reagents after imagewise removal · CPC title

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• C07C309/39

  containing halogen atoms bound to the carbon skeleton · CPC title

• G03F7/004

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

• C07C309/40

  containing nitro or nitroso groups bound to the carbon skeleton · CPC title