Gate-all-around fin device

Patent metadata

Field	Value
Publication number	US-2016181162-A1
Application number	US-201514882800-A
Country	US
Kind code	A1
Filing date	Oct 14, 2015
Priority date	Nov 19, 2014
Publication date	Jun 23, 2016
Grant date	—

Abstract

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

First claim

What is claimed:

1 . A method comprising:
forming a plurality of fin structures from a substrate; forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures; forming a source contact on an exposed portion of a first fin structure; forming drain contacts on exposed portions of adjacent fin structures to the first fin structure; and forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type, wherein:
the source contact and the drain contacts are formed by an epitaxial growth process followed by an n+ implantation process;
the first conductivity type is formed as a deep N-well and the second conductivity type as a P-well;
the gate structure is formed partially over the deep N-well and the P-well;
the first conductivity type is formed as a continuous deep N-well and the second conductivity type as a P-well; and
the gate structure and the first fin structure comprising the source contact are formed completely over the deep N-well, thereby forming a floating contact.

2 . A method comprising:
forming a plurality of fin structures from a substrate; forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures; forming a source contact on an exposed portion of a first fin structure; forming drain contacts on exposed portions of adjacent fin structures to the first fin structure; and forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type, wherein: the source contact and the drain contacts are formed by an epitaxial growth process followed by an n+ implantation process; the first conductivity type is formed as a deep N-well and the second conductivity type as a P-well; the gate structure is formed partially over the deep N-well and the P-well; the first conductivity type is formed as a shallow N-well and the second conductivity type is a P-well; the gate structure is formed partially over the shallow N-well and the P-well; and the shallow N-well is a ring structure.

3 . A method comprising:
forming a plurality of fin structures from a substrate; forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures; forming a source contact on an exposed portion of a first fin structure; forming drain contacts on exposed portions of adjacent fin structures to the first fin structure; and forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type, wherein:
the source contact and the drain contacts are formed by an epitaxial growth process followed by an n+ implantation process;
the first conductivity type is formed as a deep N-well and the second conductivity type as a P-well;
the gate structure is formed partially over the deep N-well and the P-well;
the first conductivity type is formed as a continuous shallow N-well and the second conductivity type as a P-well;
the gate structure is formed entirely over the shallow N-well; and
the first fin structure comprising the source contact is formed completely over the shallow N-well.

Assignees

• IBM

Inventors

• Campi Jr John B
• Gauthier Jr Robert J
• Mishra Rahul
• Mitra Souvick
• Muhammad Mujahid

Classifications

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/22

  using masks · CPC title

• H10P30/21

  of electrically active species · CPC title

• H01G4/20

  using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 (H01G4/12 takes precedence) · CPC title

• H01G4/206

  inorganic and synthetic material · CPC title