Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium

Patent metadata

Field	Value
Publication number	US-2016177446-A1
Application number	US-201514802491-A
Country	US
Kind code	A1
Filing date	Jul 17, 2015
Priority date	Dec 18, 2014
Publication date	Jun 23, 2016
Grant date	—

Abstract

A substrate processing apparatus includes a process chamber, a substrate support, a first gas supply unit including a first gas dispersion unit, a second gas supply unit including a second gas dispersion unit, and a plurality of dispersion pipes connecting the process chamber and the second gas dispersion unit. An area of an inner surface of the second gas dispersion unit is smaller than a sum of an area of an inner surface of the first gas dispersion unit and areas of outer surfaces of the plurality of dispersion pipes. The substrate processing apparatus may reduce at least one of the amounts of residual first gas and residual second gas wherein the byproducts generated by the reaction between the residual first gas and the residual second gas hinder a desired chemical reaction in forming a film by supplying the first gas and the second gas in a cycle.

First claim

1 . A substrate processing apparatus comprising:
a process chamber configured to process a substrate; a substrate support configured to support the substrate; a first gas supply unit including a first buffer space configured to disperse a first gas; a second gas supply unit including a second buffer space configured to disperse a second gas; a plurality of dispersion pipes connecting the process chamber and the second buffer space by penetrating an inside of the first buffer space and configured to supply the second gas into the process chamber; and a gas guide having a cone shape disposed in the second buffer space wherein a lower end of the gas guide extends in a horizontal direction beyond a region where the plurality of dispersion pipes are installed, wherein an area of a space of the gas guide where gas molecules in the second buffer space hardly penetrate is smaller than a sum of an area of an inner surface of the first buffer space and areas of outer surfaces of the plurality of dispersion pipes.

2 . The substrate processing apparatus of claim 1 , wherein an area of a portion of the inner surface perpendicular to the substrate support is smaller than a sum of the areas of the outer surfaces of the plurality of dispersion pipes.

3 . The substrate processing apparatus of claim 1 , wherein a sum of areas of a center portion and a peripheral portion of the gas guide is smaller than a sum of portions of the areas of the outer surfaces of the plurality of dispersion pipes opposite to a gas inlet port introducing the first gas.

4 . The substrate processing apparatus of claim 2 , wherein a sum of areas of a center portion and a peripheral portion of the gas guide is smaller than a sum of portions of the areas of the outer surfaces of the plurality of dispersion pipes opposite to a gas inlet port introducing the first gas.

5 . The substrate processing apparatus of claim 1 , wherein the first gas comprises a source gas and the second gas comprises a reactive gas.

6 . The substrate processing apparatus of claim 1 , wherein an amount of the second gas adsorbed per unit area is greater than that of the first gas.

7 . The substrate processing apparatus of claim 3 , wherein an amount of the second gas adsorbed per unit area is greater than that of the first gas.

8 . The substrate processing apparatus of claim 1 , further comprising a control unit configured to control the first gas supply unit and the second gas supply unit to alternately supply the first gas and the second gas.

9 . The substrate processing apparatus of claim 1 , wherein the first buffer space faces the substrate support, and the second buffer space is disposed on the first buffer space.

10 . The substrate processing apparatus of claim 6 , wherein the first buffer space faces the substrate support, and the second buffer space is disposed on the first buffer space.

11 . The substrate processing apparatus of claim 7 , wherein the first buffer space faces the substrate support, and the second buffer space is disposed on the first buffer space.

12 . The substrate processing apparatus of claim 1 , further comprising:
an inert gas supply unit configured to supply an inert gas; and a control unit configured to control the first gas supply unit, the second gas supply unit and the inert gas supply unit to supply the inert gas to the second buffer space when the first gas is supplied to the first buffer space and supply the inert gas to the first buffer space when the second gas is supplied to the second buffer space.

13 . The substrate processing apparatus of claim 1 , further comprising: a thermal insulation unit disposed between the substrate support and the first buffer space to face the substrate.

14 . The substrate processing apparatus of claim 13 , wherein the thermal insulation unit comprises a vacuum space.

15 . The substrate processing apparatus of claim 3 , further comprising: a thermal insulation unit disposed between the substrate support and the first buffer space.

16 . he substrate processing apparatus of claim 15 , wherein the thermal insulation unit comprises a vacuum space.

17 . The substrate processing apparatus of claim 11 , further comprising: a thermal insulation unit disposed between the substrate support and the first buffer space.

18 . The substrate processing apparatus of claim 17 , wherein the thermal insulation unit comprises a vacuum space.

19 . The substrate processing apparatus of claim 1 , wherein a surface area of a second retention region where the second gas remains without facing a mainstream of the second gas is smaller than that of a first retention region where the first gas remains without facing a mainstream of the first gas.

Assignees

• Hitachi Int Electric Inc

Inventors

• Saido Shuhei

Classifications

• C23C16/45559

  Diffusion of reactive gas to substrate · CPC title

• C23C16/45574

  Nozzles for more than one gas · CPC title

• C23C16/4412

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• C23C16/45565

  Shower nozzles · CPC title

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title