Composition for forming a silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer

Patent metadata

Field	Value
Publication number	US-2016177133-A1
Application number	US-201514842632-A
Country	US
Kind code	A1
Filing date	Sep 1, 2015
Priority date	Dec 19, 2014
Publication date	Jun 23, 2016
Grant date	—

Abstract

A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.

First claim

What is claimed is:

1 . A composition for forming a silica based layer,
comprising a silicon-containing compound comprising polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13, wherein the turbidity increasing rate is defined by Relationship Equation 1, and a gelation time in the Relationship Equation 1 is measured at temperature of about 23° C.±about 2° C. under a relative humidity of about 50%±about 10%:
Turbidity increasing rate (NTU/hr)=(Turbidity at gelation−Initial turbidity)/Gelation time.   Relationship Equation 1

2 . The composition of claim 1 , wherein the silicon-containing compound comprises polysilazane comprising a moiety represented by Chemical Formula 1:

wherein, in Chemical Formula 1, R 1 to R 3 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof, and
“*” indicates a linking point.

3 . The composition of claim 1 , wherein the silicon-containing compound comprises polysiloxazane comprising a moiety represented by Chemical Formula 2:

wherein, in Chemical Formula 2, R 4 to R 7 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof, and
“*” indicates a linking point.

4 . The composition of claim 1 , wherein the solvent comprises at least one selected from trimethylbenzene, triethylbenzene, decahydronaphthalene, tetrahydronaphthalene, indene, diethylbenzene, and methylnaphthalene.

5 . The composition of claim 1 , wherein the composition has the turbidity increasing rate of less than or equal to about 0.125.

6 . A method for manufacturing a silica based layer, the comprising
coating the composition of claim 1 on a substrate, drying the substrate coated with the composition to produce a resultant, and curing the resultant under an inert atmosphere at a temperature of greater than or equal to about 150° C. to manufacture a silica based layer.

7 . The method of claim 6 , wherein the composition is coated utilizing a spin-on coating method.

8 . The method of claim 6 , wherein the silicon-containing compound comprises polysilazane comprising a moiety represented by Chemical Formula 1:

wherein, in Chemical Formula 1, R 1 to R 3 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof, and
“*” indicates a linking point.

9 . The method of claim 6 , wherein the silicon-containing compound comprises polysiloxazane comprising a moiety represented by Chemical Formula 2:

wherein, in Chemical Formula 2, R 4 to R 7 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof, and
“*” indicates a linking point.

10 . The method of claim 6 , wherein the solvent comprises at least one selected from trimethylbenzene, triethylbenzene, decahydronaphthalene, tetrahydronaphthalene, indene, diethylbenzene, and methylnaphthalene.

11 . The method of claim 6 , wherein the composition has the turbidity increasing rate of less than or equal to about 0.125.

12 . An electronic device comprising a silica based layer manufactured according to the method of claim 6 .

13 . The device of claim 12 , wherein the silicon-containing compound comprises polysilazane comprising a moiety represented by Chemical Formula 1:

wherein, in Chemical Formula 1, R 1 to R 3 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof, and
“*” indicates a linking point.

14 . The device of claim 12 , wherein the silicon-containing compound comprises polysiloxazane further comprising a moiety represented by Chemical Formula 2:

wherein, in Chemical Formula 2, R 4 to R 7 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof, and
“*” indicates a linking point.

15 . The device of claim 12 , wherein the solvent comprises at least one selected from trimethylbenzene, triethylbenzene, decahydronaphthalene, tetrahydronaphthalene, indene, diethylbenzene, and methylnaphthalene.

16 . The device of claim 12 ,

Assignees

• Samsung Sdi Co Ltd

Inventors

• Lim Wan-Hee
• Kwak Taek-Soo
• Lee Han-Song
• Park Eun-Su
• Kang Sun-Hae
• Kim Bo-Sun
• Kim Sang-Kyun
• Park Sae-Mi
• Bae Jin-Hee
• Seo Jin-Woo
• Jang Jun-Young
• Cho Youn-Jin
• Han Kwen-Woo
• Hwang Byeong-Gyu

Classifications

• C08K5/01

  Hydrocarbons {(C08K5/0091 takes precedence)} · CPC title

• B05D1/005

  Spin coating · CPC title

• C09D183/14 Primary

  in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms (C09D183/10 takes precedence) · CPC title

• C09D183/16

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title

• C08G77/62

  Nitrogen atoms · CPC title