Chemical mechanical polishing method
US-2015375361-A1 · Dec 31, 2015 · US
High-stability polyurethane polishing pad
US2016176012A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016176012-A1 |
| Application number | US-201414576841-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 19, 2014 |
| Priority date | Dec 19, 2014 |
| Publication date | Jun 23, 2016 |
| Grant date | — |
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- Title
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Abstract
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The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad is a cast polyurethane polymeric matrix formed from an isocyanate-terminated molecule and a curative agent. The cast polyurethane polymeric matrix contains 4.2 to 7.5 weight percent fluid-filled microspheres in the isocyanate-terminated molecule. The fluid-filled-microspheres is polymeric and has an average diameter of 10 to 80 μm and the polishing pad having a conditioner sensitivity (CS) of 0 to 2.6.
First claim
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1 . A polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates, the polishing pad comprising a cast polyurethane polymeric matrix formed from an isocyanate-terminated molecule and a curative agent, the cast polyurethane polymeric matrix containing 4.2 to 7.5 weight percent fluid-filled microspheres in the isocyanate-terminated molecule, the fluid-filled-microspheres being polymeric and having an average diameter of 10 to 80 μm, the polishing pad having a conditioner sensitivity (CS) of 0 to 2.6 with CS defined as follows: CS = RR 75 % In - situ Conditioning - RR 50 % In - situ Conditioning RR 50 % In - situ Conditioning where CS is defined as blanket TEOS removal rate difference at 75% in-situ conditioning (RR 75% In-situ Conditioning ) and blanket TEOS removal rate at 50% in-situ conditioning (RR 50% In-situ Conditioning ) divided by the blanket TEOS removal rate at 50% partial in-situ conditioning using a fumed silica slurry having a 0.1 μm average particle size at a 12.5 wt % concentration with a pH of 10.5 and a diamond conditioner with a 150 μm average particle size, a 400 μm pitch and a 100 μm protrusion at a conditioner downforce of 9 lbs (or 4.08 Kg). 2 . The polishing pad of claim 1 wherein the curative contains 4,4′-methylene-bis(2-chloroaniline) (MbOCA). 3 . The polishing pad of claim 1 the curative contains a blend of 4,4′-methylene-bis(2-chloroaniline) (MbOCA) and a multifunctional polyol. 4 . The polishing pad of claim 1 wherein the polishing pad has a density of 0.5 to 0.75 g/cm 3 . 5 . The polishing pad of claim 1 wherein the fluid-filled-microspheres have an average diameter of 20 to 60 μm. 6 . A polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates, the polishing pad comprising a cast polyurethane polymeric matrix formed from a urethane prepolymer of H 12 MDI/TDI with polytetramethylene ether glycol (PTMEG) having an unreacted NCO of 8.95 to 9.25 wt % and a curative agent, the cast polyurethane polymeric matrix containing 4.2 to 7.5 weight percent fluid-filled microspheres in the urethane prepolymer, the fluid-filled-microspheres being polymeric and having an average diameter of 10 to 80 μm, the polishing pad having a conditioner sensitivity (CS) of 0 to 2.6 with CS defined as follows: CS = RR 75 % In - situ Conditioning - RR 50 % In - situ Conditioning RR 50 % In - situ Conditioning where CS is defined as blanket TEOS removal rate difference at 75% in-situ conditioning (RR 75% In-situ Conditioning ) and blanket TEOS removal rate at 50% in-situ conditioning (RR 50% In-situ Conditioning ) divided by the blanket TEOS removal rate at 50% partial in-situ conditioning using a fumed silica slurry having a 0.1 μm average particle size at a 12.5 wt % concentration with a pH of 10.5 and a diamond conditioner with a 150 μm average particle size, a 400 μm pitch and a 100 μm protrusion at a conditioner downforce of 9 lbs (or 4.08 Kg). 7 . The polishing pad of claim 6 wherein the curative contains 4,4′-methylene-bis(2-chloroaniline) (MbOCA). 8 . The polishing pad of claim 6 the curative contains a blend of 4,4′-methylene-bis(2-chloroaniline) (MbOCA) and a multifunctional polyol. 9 . The polishing pad of claim 6 wherein the polishing pad has
Assignees
Inventors
Classifications
involving a dielectric removal step · CPC title
containing two or more cycloaliphatic rings · CPC title
containing oxyethylene end groups · CPC title
- B24B37/24Primary
characterised by the composition or properties of the pad materials · CPC title
Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group · CPC title
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Frequently asked questions
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- What does patent US2016176012A1 cover?
- The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad is a cast polyurethane polymeric matrix formed from an isocyanate-terminated molecule and a curative agent. The cast polyurethane polymeric matrix contains 4.2 to 7.5 weight percent fluid-filled microspheres in the isocyanate-terminated molecule. The …
- Who is the assignee on this patent?
- Rohm & Haas Elect Mat, Dow Global Technologies Llc
- What technology area does this patent fall under?
- Primary CPC classification B24B37/24. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Thu Jun 23 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).