Manufacturing method for semiconductor structure
US-12165910-B2 · Dec 10, 2024 · US
US2016172188A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016172188-A1 |
| Application number | US-201514754346-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 29, 2015 |
| Priority date | Dec 16, 2014 |
| Publication date | Jun 16, 2016 |
| Grant date | — |
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A rinse solution for a silica thin film includes trimethylbenzene, diethylbenzene, indane, indene, tert-butyl toluene, methylnaphthalene, a mixture including an aromatic hydrocarbon having 12 or more carbon atoms, a mixture including an aliphatic hydrocarbon having 12 or more carbon atoms, a mixture including a hetero hydrocarbon compound including a phenyl group and an oxygen atom, or a combination thereof.
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What is claimed is: 1 . A rinse solution for a silica thin film, comprising trimethylbenzene, diethylbenzene, indane, indene, methylanisole, tert-butyl toluene, a mixture comprising an aromatic hydrocarbon having 12 or more carbon atoms, a mixture comprising an aliphatic hydrocarbon having 12 or more carbon atoms, a mixture comprising a hetero hydrocarbon compound comprising a phenyl group and an oxygen atom, or a combination thereof. 2 . The rinse solution for the silica thin film of claim 1 , wherein the silica thin film comprises hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof. 3 . The rinse solution for the silica thin film of claim 1 , wherein the rinse solution for the silica thin film comprises a mixture comprising a C12 to C30 aromatic hydrocarbon, a mixture comprising a C12 to C30 aliphatic hydrocarbon, or a combination thereof. 4 . The rinse solution for the silica thin film of claim 1 , wherein the mixture comprising a hetero hydrocarbon compound comprises greater than or equal to about 10 wt % and less than or equal to about 70 wt % of the hetero hydrocarbon compound comprising a phenyl group and an oxygen atom. 5 . The rinse solution for the silica thin film of claim 1 , wherein the hetero hydrocarbon compound comprises an ether, an aldehyde, an alcohol, a ketone, or a combination thereof in the structure. 6 . The rinse solution for the silica thin film of claim 1 , wherein the hetero hydrocarbon compound comprises methylanisole, diphenylether, butylbenzoate, butylphenylether, allylmethylphenol, isobutylphenyl propionaldehyde, phenylcyclohexanone, or a combination thereof. 7 . A method of producing a silica thin film, the method comprising preparing a substrate; coating a silicon-containing solution on the substrate; and partially spraying the rinse solution for the silica thin film of claim 1 on the substrate coated with the silicon-containing solution. 8 . The method of claim 7 , wherein the silica thin film comprises hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof. 9 . The method of claim 7 , wherein the rinse solution for the silica thin film comprises a mixture comprising a C12 to C30 aromatic hydrocarbon, a mixture comprising a C12 to C30 aliphatic hydrocarbon, or a combination thereof. 10 . The method of claim 7 , wherein the mixture comprising a hetero hydrocarbon compound comprises greater than or equal to about 10 wt % and less than or equal to about 70 wt % of the hetero hydrocarbon compound comprising a phenyl group and an oxygen atom. 11 . The method of claim 7 , wherein the hetero hydrocarbon compound comprises an ether, an aldehyde, an alcohol, a ketone, or a combination thereof in the structure. 12 . The method of claim 7 , wherein the hetero hydrocarbon compound comprises methylanisole, diphenylether, butylbenzoate, butylphenylether, allylmethylphenol, isobutylphenyl propionaldehyde, phenylcyclohexanone, or a combination thereof. 13 . A silica thin film produced utilizing the rinse solution for the silica thin film of claim 1 . 14 . The silica thin film of claim 13 , wherein the silica thin film comprises hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof. 15 . The silica thin film of claim 13 , wherein the rinse solution for the silica thin film comprises a mixture comprising a C12 to C30 aromatic hydrocarbon, a mixture comprising a C12 to C30 aliphatic hydrocarbon, or a combination thereof. 16 . The silica thin film of claim 13 , wherein the mixture comprising a hetero hydrocarbon compound comprises greater than or equal to about 10 wt % and less than or equal to about 70 wt % of the hetero hydrocarbon compound comprising a phenyl group and an oxygen atom. 17 . The silica thin film of claim 13 , wherein the hetero hydrocarbon compound comprises an ether, an aldehyde, an alcohol, a ketone, or a combination thereof in the structure. 18 . The silica thin film of claim 13 , wherein the hetero hydrocarbon compound comprises methylanisole, diphenylether, butylbenzoate, butylphenylether, allylmethylphenol, isobutylphenyl propionaldehyde, phenylcyclohexanone, or a combination thereof. 19 . The silica thin film of claim 13 , wherein the silica thin film has a step difference (ΔT) of less than or equal to about 400 nm measured according to the following Equation 1: Step difference (Δ T )=(a maximum thickness of a silica thin film measured between one side end of the silica thin film and a point 10 mm apart therefrom)−(a thickness of the silica thin film measured at a point 10 mm apart from the one side end of the silica thin film). Equation 1
Cleaning of wafer edges · CPC title
the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title
In-situ cleaning · CPC title
Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title
the material being a silicon oxide, e.g. SiO2 · CPC title
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