Semiconductor Device and Method of Bonding Semiconductor Die to Substrate in Reconstituted Wafer Form

Patent metadata

Field	Value
Publication number	US-2016163675-A1
Application number	US-201615012346-A
Country	US
Kind code	A1
Filing date	Feb 1, 2016
Priority date	Dec 20, 2012
Publication date	Jun 9, 2016
Grant date	—

Abstract

A semiconductor device has a plurality of semiconductor die disposed over a carrier. An electrical interconnect, such as a stud bump, is formed over the semiconductor die. The stud bumps are trimmed to a uniform height. A substrate includes a bump over the substrate. The electrical interconnect of the semiconductor die is bonded to the bumps of the substrate while the semiconductor die is disposed over the carrier. An underfill material is deposited between the semiconductor die and substrate. Alternatively, an encapsulant is deposited over the semiconductor die and substrate using a chase mold. The bonding of stud bumps of the semiconductor die to bumps of the substrate is performed using gang reflow or thermocompression while the semiconductor die are in reconstituted wafer form and attached to the carrier to provide a high throughput of the flipchip type interconnect to the substrate.

First claim

What is claimed:

1 . A method of making a semiconductor device, comprising:
providing a reconstituted panel including a plurality of semiconductor die; disposing the reconstituted panel over a substrate; and bonding the semiconductor die to the substrate.

2 . The method of claim 1 , further including forming an interconnect structure over the semiconductor die, wherein bonding the semiconductor die to the substrate further includes bonding the interconnect structure to the substrate.

3 . The method of claim 2 , wherein the interconnect structure includes a bump or a stud bump.

4 . The method of claim 1 , further including simultaneously bonding the semiconductor die to the substrate by thermocompression bonding.

5 . The method of claim 1 , further including depositing an encapsulant or underfill material between the semiconductor die and substrate.

6 . The method of claim 1 , further including singulating the substrate after bonding the semiconductor die to the substrate.

7 . A method of making a semiconductor device, comprising:
providing a reconstituted panel including a plurality of semiconductor die; forming a first interconnect structure over the semiconductor die; and disposing the reconstituted panel over a substrate.

8 . The method of claim 7 , further including:
forming a second interconnect structure over the substrate; and bonding the first interconnect structure to the second interconnect structure.

9 . The method of claim 7 , wherein providing the reconstituted panel further includes:
providing a carrier; and disposing the semiconductor die over the carrier.

10 . The method of claim 9 , further including forming the first interconnect structure over the semiconductor die while the semiconductor die are disposed over the carrier.

11 . The method of claim 9 , further including bonding the first interconnect structure to the substrate while the semiconductor die are disposed over the carrier.

12 . The method of claim 7 , further including bonding the first interconnect structure to the substrate using thermocompression.

13 . The method of claim 7 , further including depositing an encapsulant or an underfill material between the semiconductor die and substrate.

14 . A semiconductor device, comprising:
a substrate; a reconstituted panel including a plurality of semiconductor die disposed over the substrate; and a first interconnect structure formed between the substrate and the semiconductor die with the first interconnect structure bonded to the substrate and the semiconductor die of the reconstituted panel.

15 . The semiconductor device of claim 14 , wherein the first interconnect structure includes a bump or a stud bump.

16 . The semiconductor device of claim 14 , further including a second interconnect structure formed over the substrate with the first interconnect structure bonded to the second interconnect structure.

17 . The semiconductor device of claim 14 , wherein the reconstituted panel further includes the semiconductor die disposed over a carrier.

18 . The semiconductor device of claim 14 , wherein the substrate includes a printed circuit board.

19 . The semiconductor device of claim 14 , further including an encapsulant or an underfill material deposited between the semiconductor die and substrate.

20 . A semiconductor device, comprising:
a substrate; and a reconstituted panel including a plurality of semiconductor die disposed over the substrate with the semiconductor die on the reconstituted panel bonded to the substrate.

21 . The semiconductor device of claim 20 , wherein the reconstituted panel further includes the semiconductor die disposed over a carrier.

22 . The semiconductor device of claim 20 , further including an interconnect structure formed over the semiconductor die of the reconstituted panel, the interconnect structure bonded to the substrate.

23 . The semiconductor device of claim 22 , wherein the interconnect structure includes a bump or a stud bump.

24 . The semiconductor device of claim 20 , wherein the substrate includes a printed circuit board.

25 . The semiconductor device of claim 20 , further including an encapsulant or underfill material deposited between the semiconductor die and substrate.

Assignees

• Stats Chippac Ltd

Inventors

• Kim Kyungmoon
• Lee Koohong
• Yee Jaehak
• Kim Youngchul
• Hoang Lan
• Marimuthu Pandi C
• Anderson Steve
• Lee Hunteak
• Chi Heejo

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title

• H10W74/117

  the substrate having spherical bumps for external connection · CPC title

• H10W74/016

  using moulds · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title