Method for producing a thick crystalline layer
US-2015349191-A1 · Dec 3, 2015 · US
Artificial crystal growth method
US2016160389A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016160389-A1 |
| Application number | US-201615046726-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 18, 2016 |
| Priority date | Aug 29, 2013 |
| Publication date | Jun 9, 2016 |
| Grant date | — |
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Abstract
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An artificial crystal growth method that includes applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the crystal substrates aligned with each other, and causing the at least two crystal substrates to grow an artificial crystal in a state where the pressure is being applied.
First claim
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1 . An artificial crystal growth method comprising: abutting at least two crystal substrates to each other in an X-axis direction such that crystallographic axis directions of the at least two crystal substrates are aligned with each other; applying a pressure to the at least two crystal substrates in the X-axis direction; and causing the at least two crystal substrates to grow an artificial crystal while the pressure is being applied. 2 . The artificial crystal growth method according to claim 1 , wherein the at least two crystal substrates are rectangular-parallelepiped-shaped. 3 . The artificial crystal growth method according to claim 1 , wherein the at least two crystal substrates include three or more crystal substrates. 4 . The artificial crystal growth method according to claim 3 , wherein the three or more crystal substrates are stacked on top of one another in a vertical direction. 5 . The artificial crystal growth method according to claim 4 , wherein the pressure is applied by a weight of a crystal substrate arranged on an upper side in the vertical direction among the three or more crystal substrates. 6 . The artificial crystal growth method according to claim 4 , wherein the pressure is applied to an outermost surface in the X-axis direction of the three or more crystal substrates. 7 . The artificial crystal growth method according to claim 6 , wherein the pressure is applied to the outermost surface by a jig having elasticity in the X-axis direction. 8 . The artificial crystal growth method according to claim 1 , wherein the at least two crystal substrates are stacked on top of one another in a vertical direction. 9 . The artificial crystal growth method according to claim 8 , wherein the pressure is applied by a weight of a crystal substrate arranged on an upper side in the vertical direction among the at least two crystal substrates. 10 . The artificial crystal growth method according to claim 8 , wherein the pressure is applied to an outermost surface in the X-axis direction of the at least two crystal substrates. 11 . The artificial crystal growth method according to claim 10 , wherein the pressure is applied to the outermost surface by a jig having elasticity in the X-axis direction. 12 . The artificial crystal growth method according to claim 1 , wherein the pressure is applied to an outermost surface in the X-axis direction of the at least two crystal substrates. 13 . The artificial crystal growth method according to claim 12 , wherein the pressure is applied to the outermost surface by a jig having elasticity in the X-axis direction.
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- What does patent US2016160389A1 cover?
- An artificial crystal growth method that includes applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the crystal substrates aligned with each other, and causing the at least two crystal substrates to grow an artificial crystal in a state where the press…
- Who is the assignee on this patent?
- Murata Manufacturing Co
- What technology area does this patent fall under?
- Primary CPC classification C30B33/06. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Jun 09 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).