Amorphous thin metal film

Patent metadata

Field	Value
Publication number	US-2016160331-A1
Application number	US-201314787638-A
Country	US
Kind code	A1
Filing date	Jul 12, 2013
Priority date	Jul 12, 2013
Publication date	Jun 9, 2016
Grant date	—

Abstract

The present disclosure is drawn to amorphous thin metal films and associated methods. Generally, an amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum; and 5 at % to 90 at % of a second metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum, wherein the second metal is different than the first metal. Typically, the three elements account for at least 70 at % of the amorphous thin metal film.

First claim

What is claimed is:

1 . An amorphous thin metal film, comprising:
5 atomic % to 90 atomic % of a metalloid, wherein the metalloid is carbon, silicon, or boron; 5 atomic % to 90 atomic % of a first metal, wherein the first metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum; and 5 atomic % to 90 atomic % of a second metal, wherein the second metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum, wherein the second metal is different than the first metal, wherein the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal film.

2 . The amorphous thin metal film of claim 1 , wherein the amorphous thin metal film has a thickness ranging from 10 angstroms to 100 microns.

3 . The amorphous thin metal film of claim 1 , wherein the amorphous thin metal film is devoid of aluminum, silver, and gold.

4 . The amorphous thin metal film of claim 1 , further comprising 0.1 atomic % to 15 atomic % of a dopant, the dopant being nitrogen, oxygen, or mixtures thereof.

5 . The amorphous thin metal film of claim 1 , wherein the amorphous thin metal film includes a refractory metal, the refractory metal being titanium, vanadium, chromium, zirconium, niobium, molybdenum, rhodium, hafnium, tantalum, tungsten, or iridium.

6 . The amorphous thin metal film of claim 1 , wherein the amorphous thin metal film has a surface RMS roughness of less than 1 nm.

7 . The amorphous thin metal film of claim 1 , wherein the amorphous thin metal film has a thermal stability of at least 400° C. and has an oxidation temperature of at least 700° C.

8 . The amorphous thin metal film of claim 1 , wherein the amorphous thin metal film has a thermal stability of at least 800° C. and has an oxidation temperature of at least 800° C.

9 . The amorphous thin metal film of claim 1 , wherein the amorphous thin metal film has an oxide growth rate of less than 0.05 nm/min.

10 . The amorphous thin metal film of claim 1 , wherein the amorphous thin metal film has a positive heat of mixing.

11 . The amorphous thin metal film of claim 1 , wherein the amorphous thin metal film has an atomic dispersity of at least 12% between at least two of the metalloid, the first metal, and the second metal relative to one another.

12 . The amorphous thin metal film of claim 1 , wherein the amorphous thin metal film has an atomic dispersity of at least 12% between each of the metalloid, the first metal, and the second metal relative to one another.

13 . A method of manufacturing an amorphous thin metal film, comprising depositing:
i) 5 atomic % to 90 atomic % of a metalloid, wherein the metalloid is carbon, silicon, or boron; ii) 5 atomic % to 90 atomic % of a first metal, wherein the first metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum; and iii) 5 atomic % to 90 atomic % of a second metal, wherein the second metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum, and wherein the second metal is different than the first metal, to a substrate to form the amorphous thin metal film.

14 . The method of claim 13 , wherein the depositing includes sputtering.

15 . The method of claim 13 , wherein prior to depositing, the metalloid, the first metal, and the second metal are mixed to form a blend.

Assignees

• Hewlett Packard Development Co
• Univ Oregon State

Inventors

• Abbott Jr James Elmer
• Agarwal Arun K
• Pugliese Roberto A
• Long Greg Scott
• Horvath Stephen
• Wager John
• Keszler Douglas A
• Olsen Kristopher
• Mcglone John

Classifications

• C23C14/14 Primary

  Metallic material, boron or silicon · CPC title

• C23C14/34

  Sputtering · CPC title

• C22C45/10 Primary

  with molybdenum, tungsten, niobium, tantalum, titanium, or zirconium {or Hf} as the major constituent · CPC title