Low-emissivity transparent laminate and building material containing the same
US-2015344358-A1 · Dec 3, 2015 · US
US2016159685A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016159685-A1 |
| Application number | US-201414907192-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 28, 2014 |
| Priority date | Jul 26, 2013 |
| Publication date | Jun 9, 2016 |
| Grant date | — |
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The present invention relates to a method for handling an ultra-thin glass for a display panel and, more specifically, the invention enables the ultra-thin glass to be easily attached to or detached from a carrier glass for supporting the ultra-thin glass before and after a surface treatment process for applying the ultra-thin glass to a display panel. To this end, the method for handling an ultra-thin glass for a display panel, according to the present invention, comprises: a bonding step for bonding an ultra-thin glass and a carrier glass for supporting the ultra-thin glass by means of a phase transition material; a surface treatment step for treating a surface of the ultra-thin glass; and a separation step for separating the ultra-thin glass from the carrier glass.
Opening claim text (preview).
What is claimed is: 1 . A method for handling a piece of ultrathin glass for a display panel, the method comprising: bonding a piece of ultrathin glass and a piece of carrier glass together via a phase transition material such that the piece of carrier glass supports the piece of ultrathin glass; surface-treating the piece of ultrathin glass; and separating the piece of ultrathin glass from the piece of carrier glass. 2 . The method according to claim 1 , wherein the phase transition material has electro-conductivity. 3 . The method according to claim 2 , wherein the phase transition material comprises indium tin oxide to which a dopant is added. 4 . The method according to claim 3 , wherein the dopant comprises one or a combination of at least two selected from the element group consisting of Ga, Zn, Ce, Mg, Zr and Nb. 5 . The method according to claim 3 , wherein the dopant added to the indium tin oxide comprises Ga 2 O 3 , a content of the Ga 2 O 3 ranging from 0.5 to 7% by weight. 6 . The method according to claim 5 , wherein the content of the Ga 2 O 3 is 2.9% by weight. 7 . The method according to claim 1 , wherein a thickness of the phase transition material disposed between the piece of ultrathin glass and the piece of carrier glass is 100 nm or less. 8 . The method according to claim 7 , wherein the thickness of the phase transition material disposed between the piece of ultrathin glass and the piece of carrier glass ranges from 30 to 50 nm. 9 . The method according to claim 1 , wherein bonding the piece of ultrathin glass and the piece of carrier glass together comprises coating a bonding surface of the piece of carrier glass with the phase transition material. 10 . The method according to claim 9 , wherein, during the separating step, the piece of ultrathin glass is separated from one surface of the phase transition material that has been bonded to the piece of ultrathin glass, roughness of the one surface of the phase transition material is greater than roughness of the other surface of the phase transition material that is bonded to the piece of carrier glass. 11 . The method according to claim 1 , wherein bonding the piece of ultrathin glass and the piece of carrier glass together comprises coating a bonding surface of the piece of ultrathin glass with the phase transition material. 12 . The method according to claim 11 , wherein, during the separating step, the piece of carrier glass is separated from one surface of the phase transition material that has been bonded to the piece of carrier glass, roughness of the one surface of the phase transition material is greater than roughness of the other surface of the phase transition material that is bonded to the piece of ultrathin glass. 13 . The method according to claim 1 , wherein surface-treating the piece of ultrathin glass comprises heat treatment at a temperature equal to or above a phase transition temperature of the phase transition material. 14 . The method according to claim 1 , wherein the piece of ultrathin glass has a thickness of 0.3 mm or less.
Doped oxides · CPC title
In2O3/SnO2 · CPC title
Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames (suction means as load-engaging elements attached to the lifting or lowering gear of cranes B66C1/02; suction cups for attaching purposes F16B47/00; suction cups on gripping heads B25J15/0616; suction cups in general B65G47/91; suction cups combined with cutting means on vertical conveyors C03B33/00 - C03B33/10; devices for turning sheets B65G49/067; suspending devices B65G49/066) · CPC title
Oxides (C03C17/02 takes precedence) · CPC title
by thermal treatment · CPC title
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