Method for producing nitride phosphor, silicon nitride powder for nitride phosphor, and nitride phosphor
US-2016024379-A1 · Jan 28, 2016 · US
US2016159648A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016159648-A1 |
| Application number | US-201414903679-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 9, 2014 |
| Priority date | Jul 11, 2013 |
| Publication date | Jun 9, 2016 |
| Grant date | — |
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A silicon nitride powder for a release agent of a polycrystalline silicon ingot casting mold, having a specific surface area of 5 to 40 m 2 /g, wherein, assuming that a content ratio of oxygen present in a particle surface layer is FSO (mass %), a content ratio of oxygen present inside a particle is FIO (mass %), and the specific surface area is FS (m 2 /g), FS/FSO is 8 to 30 and FS/FIO is 22 or more, and a ratio D10/D90 between a 10 vol % diameter D10 and a 90 vol % diameter D90 in a measurement of a particle size distribution on a volume basis by a laser diffraction particle size distribution meter of 0.05 to 0.20.
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1 .- 11 . (canceled) 12 . A silicon nitride powder for a release agent of a polycrystalline silicon ingot casting mold, having a specific surface area of 5 to 40 m 2 /g, wherein, assuming that a content ratio of oxygen present in a particle surface layer is FSO (mass %), a content ratio of oxygen present inside a particle is FIO (mass %), and the specific surface area is FS (m 2 /g), FS/FSO is 8 to 30 and FS/FIO is 22 or more, and a ratio D10/D90 between a 10 vol % diameter D10 and a 90 vol % diameter D90 in a measurement of a particle size distribution on a volume basis by a laser diffraction particle size distribution meter of 0.05 to 0.20. 13 . The silicon nitride powder according to claim 12 , wherein Fe (iron) content is 10 ppm or less. 14 . The silicon nitride powder according to claim 12 , wherein FS/FSO is 15 to 30 and FS/FIO is 30 to 60. 15 . A method of producing the silicon nitride powder of claim 12 , comprising firing an amorphous Si—N(—H)-based compound with a specific surface area of 300 to 1,200 m 2 /g at a temperature of 1,400 to 1,700° C. in a nitrogen-containing inert gas atmosphere or a nitrogen-containing reducing gas atmosphere while flowing said amorphous Si—N(—H)-based compound in a continuous firing furnace, wherein assuming that a specific surface area of said amorphous Si—N(—H)-based compound is RS (m 2 /g) and an oxygen content ratio is RO (mass %), RS/RO is 100 or more, and at the time of said firing, said amorphous Si—N(—H)-based compound is heated at a temperature rise rate of 12 to 500° C./min in a temperature range of 1,100 to 1,400° C. 16 . A slurry containing the silicon nitride powder according to claim 12 obtained by mixing the silicon nitride powder with water. 17 . The slurry according to claim 16 , which does not contain a binder. 18 . A method of manufacturing a polycrystalline silicon ingot casting mold having a release layer, comprising: a slurry forming step of mixing the silicon nitride powder according to claim 12 with water to form a slurry, a slurry applying step of coating a mold surface with said slurry, a slurry drying step of drying said slurry applied onto the mold surface, and a heat treatment step of heating, in an oxygen-containing atmosphere, the mold of which surface is coated with said slurry. 19 . The method according to claim 18 , wherein said slurry does not contain a binder. 20 . The method according to claim 18 , wherein said heat treatment is performed at a temperature of 400 to 800° C. 21 . A polycrystalline silicon ingot casting mold having, on an inner surface of the mold, a release layer composed of the silicon nitride powder according to claim 12 . 22 . A method of manufacturing a polycrystalline silicon ingot comprising: casting a polycrystalline silicon ingot from a silicon melt with the polycrystalline silicon ingot casting mold according to claim 21 , and removing a cast polycrystalline silicon ingot from said mold.
with silicon · CPC title
Particles with a specific particle size distribution · CPC title
Surface area · CPC title
Preparation (chemical coating from the vapour phase C23C16/00) · CPC title
Heating with air · CPC title
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