Chelating agents for quantum dot precursor materials in color conversion layers for micro-leds
US-2024194836-A1 · Jun 13, 2024 · US
US2016149097A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016149097-A1 |
| Application number | US-201514947006-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 20, 2015 |
| Priority date | Nov 21, 2014 |
| Publication date | May 26, 2016 |
| Grant date | — |
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A method for manufacturing a wavelength conversion member includes: forming a phosphor layer on a base body including phosphor particles and oxide particles affixed to surfaces of the phosphor particles; and forming a cover layer covering the surfaces of the phosphor particles and surfaces of the oxide particles continuously, and having a same oxide material as the oxide particles. A wavelength conversion member includes: a base body, a phosphor layer disposed on the base body and including phosphor particles and oxide particles affixed to surfaces of the phosphor particles; and a cover layer covering the surfaces of the phosphor particles and surfaces of the oxide particles continuously, and including a same oxide material as the oxide particles.
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What is claimed is: 1 . A method for manufacturing a wavelength conversion member comprising: forming a phosphor layer on a base body, the phosphor layer including phosphor particles and oxide particles affixed to surfaces of the phosphor particles; and forming a cover layer covering the surfaces of the phosphor particles and surfaces of the oxide particles continuously, and having a same oxide material as the oxide particles. 2 . The method for manufacturing the wavelength conversion member according to claim 1 , wherein the forming of the phosphor layer includes forming the phosphor layer by preparing a paste in which the phosphor particles and the oxide particles are mixed with in an organic solvent and a resin, and applying the past by printing over the base body. 3 . The method for manufacturing the wavelength conversion member according to claim 1 , wherein the oxide particles have a smaller particle size than the phosphor particles. 4 . The method for manufacturing the wavelength conversion member according to claim 1 , wherein the phosphor particles have an average size of 0.1 to 50 μm, and the cover layer has an average thickness of 1 nm to 50 μm. 5 . The method for manufacturing the wavelength conversion member according to claim 1 , wherein the cover layer is made from at least one of Al 2 O 3 , SiO 2 , ZrO 2 , HfO 2 , TiO 2 , ZnO, Ta 2 O 5 , Nb 2 O 5 , In 2 O 3 and SnO 2 . 6 . The method for manufacturing the wavelength conversion member according to claim 1 , wherein the forming of the cover layer includes forming the cover layer by ALD. 7 . The method for manufacturing the wavelength conversion member according to claim 1 , wherein the forming of the cover layer includes forming the cover layer by sol-gel method. 8 . A wavelength conversion member comprising: a base body: a phosphor layer disposed on the base body and including phosphor particles and oxide particles affixed to surfaces of the phosphor particles; and a cover layer covering the surfaces of the phosphor particles and surfaces of the oxide particles continuously, and including a same oxide material as the oxide particles. 9 . The wavelength conversion member according to claim 8 , wherein the phosphor particles are in contact via the oxide particles. 10 . The wavelength conversion member according to claim 8 , wherein the oxide particles have a smaller particle size than the phosphor particles. 11 . The wavelength conversion member according to claim 8 , wherein the phosphor particles have an average size of 0.1 to 50 μm, and the cover layer has an average thickness of 1 nm to 50 μm. 12 . The wavelength conversion member according to claim 8 , wherein the cover layer is made from at least one of Al 2 O 3 ,SiO 2 , ZrO 2 , HfO 2 , TiO 2 , ZnO, Ta 2 O 5 , Nb 2 O 5 , In 2 O 3 and SnO 2 . 13 . The wavelength conversion member according to claim 8 , wherein the cover layer has an uneven surface attributable to at least the phosphor layer. 14 . The wavelength conversion member according to claim 8 , further comprising a second cover layer with a higher thermal conductivity than the cover layer. 15 . The wavelength conversion member according to claim 8 , wherein the second cover layer is formed of nitride. 16 . A light emitting device comprising: a light emitting element; and the wavelength conversion member according to claim 8 disposed so as to cover a light emission face of the light emitting element.
of wavelength conversion means · CPC title
Atomic layer deposition [ALD] · CPC title
Methods specially adapted for coating powder · CPC title
of aluminium, magnesium or beryllium · CPC title
characterised by their material, e.g. binder · CPC title
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