Field-emission device with improved beams-convergence

US2016148774A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016148774-A1
Application numberUS-201514929792-A
CountryUS
Kind codeA1
Filing dateNov 2, 2015
Priority dateNov 21, 2014
Publication dateMay 26, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present disclosure may provide a field emission device with an enhanced beam convergence. For this, the device may include a gate structure disposed between a cathode electrode and an anode electrode, wherein the gate structure includes a gate electrode and an atomic layer sheet disposed on the gate electrode, the gate electrode facing an emitter and having at least one aperture formed therein.

First claim

Opening claim text (preview).

What is claimed is: 1 . A field emission device comprising: a cathode electrode; at least one emitter on the cathode electrode; an anode electrode disposed away in a longitudinal direction of the device from the cathode electrode; and a gate structure disposed between the cathode electrode and the anode electrode, wherein the gate structure includes a gate electrode and an atomic layer sheet disposed on the gate electrode, the gate electrode facing the emitter and having at least one aperture formed therein. 2 . The device of claim 1 , wherein the at least one aperture comprises a plurality of apertures, and the at least one emitter comprises a plurality of emitters, wherein the plurality of apertures have a locational correspondence respectively with the plurality of emitters. 3 . The device of claim 2 , wherein the atomic layer sheet is curved in each of the apertures regions. 4 . The device of claim 3 , wherein the curvedness of the atomic layer sheet allows a reduced distortion of a potential distribution between the gate structure and the cathode electrode, and, hence, electrons emitted from the emitters have an enhanced trajectory convergence. 5 . The device of claim 1 , wherein the at least one aperture comprises a plurality of apertures, and the at least one emitter comprises a plurality of emitters, wherein the plurality of apertures have a size-correspondence respectively with the plurality of emitters. 6 . The device of claim 1 , wherein the atomic layer sheet includes a graphene sheet. 7 . The device of claim 1 , wherein the atomic layer sheet allows a reduced distortion of a potential distribution near the gate aperture and between the gate structure and the cathode electrode. 8 . The device of claim 1 , wherein the gate electrode induces an electron emission from the emitter. 9 . The device of claim 1 , wherein the at least one emitter comprises a plurality of emitters, and the aperture is implemented in a single aperture, whose size covers all of the plurality of emitters.

Assignees

Inventors

Classifications

  • characterised by the material · CPC title

  • characterised by the form or structure · CPC title

  • Control electrodes for flat display tubes, e.g. of the type covered by group H01J31/123 · CPC title

  • Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement {(transit time tubes H01J23/00, H01J25/00; X-ray tubes H01J35/00; beam tubes for examining ions, e.g. electron or ion microscopes, or processing of objects or materials, e.g. electron or ion beam tubes H01J37/04; electron multipliers H01J43/04; handling of radiation or particles, e.g. focusing, deviating, not otherwise provided for G21K1/00)} · CPC title

  • H01J3/021Primary

    Electron guns using a field emission, photo emission, or secondary emission electron source · CPC title

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What does patent US2016148774A1 cover?
The present disclosure may provide a field emission device with an enhanced beam convergence. For this, the device may include a gate structure disposed between a cathode electrode and an anode electrode, wherein the gate structure includes a gate electrode and an atomic layer sheet disposed on the gate electrode, the gate electrode facing an emitter and having at least one aperture formed ther…
Who is the assignee on this patent?
Korea Electronics Telecomm
What technology area does this patent fall under?
Primary CPC classification H01J3/021. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu May 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).