The invention claimed is:
1. A field emitter array device comprising,
a wafer substrate;
an electrical insulator layer disposed on the wafer substrate;
a plurality of metal tabs for establishing an electrical circuit;
a flat panel emitter layer comprising ultrananocrystalline diamond; and
a two dimensional electron extraction grid disposed above the flat panel emitter layer, thereby forming a two dimensional field emitter array device.
2. The field emitter array as defined in claim 1 wherein the wafer substrate comprises silicon.
3. The field emitter array as defined in claim 1 wherein the electrical insulator layer comprises Si 3 N 4 .
4. The field emitter array as defined in claim 1 further including a collimator, an X-ray target, a focusing electrode, a spacer and a lead shield, thereby forming an X-ray system for inspection of a specimen.
5. The field emitter array as defined in claim 1 wherein the metal tabs comprise tungsten tabs.
6. The field emitter array as defined in claim 1 wherein the electron extraction grid comprises copper.
7. The field emitter array as defined in claim 6 wherein the electron extraction grid includes openings, thereby enabling electron extraction therethrough.
8. The field emitter array as defined in claim 7 having a photoresist layer disposed adjacent the openings.
9. A method of manufacturing a field emitter array device, comprising the steps of,
disposing a wafer substrate for forming the field emitter array device thereon;
forming an electrical insulator layer on the wafer substrate;
forming a plurality of metal tabs on the electrical insulator layer;
forming a flat panel emitter layer comprising at least one of nitrogen incorporated nanocrystalline diamond and boron doped ultrananocrystalline diamond; and
forming above the flat panel emitter layer an electron extraction grid.
10. The method as defined in claim 9 wherein the flat panel emitter layer comprises nitrogen incorporated nanocrystalline diamond.
11. The method as defined in claim 9 wherein the electron extraction grid comprises copper disposed on SiO 2 .
12. The method as defined in claim 9 wherein the electrical insulator layer is deposited by LPCVD.
13. The method as defined in claim 9 wherein the electrical insulator layer comprises Si 3 N 4 .
14. The method as defined in claim 9 wherein the metal tabs are deposited by at least one of the sputtering and electron beam evaporation.
15. The method as defined in claim 9 further including the step of forming components of an X-ray system coupled to the field emitter array.
16. The method as defined in claim 15 wherein the X-ray system includes a collimator, an X-ray target, a focusing electrode, a spacer and a lead shield, thereby forming an X-ray system for inspection of a specimen.