Euv mask and manufacturing method by using the same

Patent metadata

Field	Value
Publication number	US-2016147138-A1
Application number	US-201514736669-A
Country	US
Kind code	A1
Filing date	Jun 11, 2015
Priority date	Nov 26, 2014
Publication date	May 26, 2016
Grant date	—

Abstract

The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over the substrate. A capping layer is disposed over the reflective structure. An absorber layer is disposed over the capping layer. The absorber layer contains a material that has a refractive index in a range from about 0.95 to about 1.01 and an extinction coefficient greater than about 0.03.

First claim

What is claimed is:

1 . A photolithography mask, comprising:
a substrate that contains a low thermal expansion material (LTEM); a reflective structure disposed over the substrate; a capping layer disposed over the reflective structure; and an absorber layer disposed over the capping layer, wherein the absorber layer contains a material that has a refractive index in a range from about 0.95 to about 1.01 and an extinction coefficient greater than about 0.03.

2 . The photolithography mask of claim 1 , wherein the refractive index of the material of the absorber layer is in a range from 0.975 to 1.

3 . The photolithography mask of claim 2 , wherein the refractive index of the material of the absorber layer is in a range from 0.985 to 0.995.

4 . The photolithography mask of claim 1 , wherein the extinction coefficient of the absorber layer is in a range from 0.4 to 0.54.

5 . The photolithography mask of claim 1 , wherein the material of the absorber layer includes one of: Radium, Al, Te, Cu, or Ge.

6 . The photolithography mask of claim 1 , further comprising a buffer layer disposed between the capping layer and the absorber layer, wherein the buffer layer and the absorber layer have different etching characteristics.

7 . The photolithography mask of claim 1 , wherein the reflective structure is configured to provide high reflectivity to a predefined radiation wavelength.

8 . The photolithography mask of claim 1 , wherein:
the LTEM includes TiO 2 doped SiO 2 ; the reflective structure includes a plurality of Mo/Si film pairs or a plurality of Mo/Be film pairs; and the capping layer contains silicon.

9 . A wafer manufacturing process, comprising:
forming a material layer over a substrate; forming a photoresist layer over the material layer; and patterning the photoresist layer using an extreme ultraviolet (EUV) mask in a photolithography process, wherein the EUV mask includes:
a substrate that contains a low thermal expansion material (LTEM);
a reflective structure disposed over the substrate;
a capping layer disposed over the reflective structure; and
an absorber layer disposed over the capping layer, wherein the absorber layer contains a material that has a refractive index in a range from about 0.95 to about 1.01 and an extinction coefficient greater than about 0.03.

10 . The wafer manufacturing process of claim 9 , further comprising directing EUV radiation onto the EUV mask via an illuminator, wherein the illuminator contains a dipole illumination component.

11 . The wafer manufacturing process of claim 9 , wherein the patterning of the photoresist layer comprises exposing the photoresist layer to EUV radiation and thereafter developing the exposed photoresist layer to form patterned photoresist features.

12 . The wafer manufacturing process of claim 9 , wherein:
the LTEM substrate contains TiO 2 doped SiO 2 ; the reflective structure includes a plurality of Mo/Si film pairs or a plurality of Mo/Be film pairs; and the capping layer contains silicon.

13 . The wafer manufacturing process of claim 9 , further comprising forming a buffer layer disposed between the capping layer and the absorber layer, wherein the buffer layer and the absorber layer have different etching characteristics.

14 . The wafer manufacturing process of claim 9 , wherein the refractive index of the material of the absorber layer is in a range from 0.975 to 1.

15 . The wafer manufacturing process of claim 14 , wherein the refractive index of the material of the absorber layer is in a range from 0.985 to 0.995.

16 . The wafer manufacturing process of claim 9 , wherein the extinction coefficient of the absorber layer is in a range from 0.4 to 0.54.

17 . The wafer manufacturing process of claim 9 , wherein the material of the absorber layer includes one of: Radium, Al, Te, Cu, or Ge.

18 . A method of fabricating a photolithography mask, comprising:
forming a reflective structure over a low thermal expansion material (LTEM) substrate; forming a capping layer over the reflective structure; and forming an absorber layer over the capping layer, wherein the absorber layer contains a material that has a refractive index in a range from about 0.95 to about 1.01 and an extinction coefficient greater than about 0.03.

19 . The method of claim 18 , wherein the forming of the absorber layer is performed such that:
the refractive index of the material of the absorber layer is in a range from 0.985 to 0.995; and the extinction coefficient of the absorber layer is in a range from 0.4 to 0.54.

20 . The method of claim 18 , wherein the forming of the absorber layer is performed such that the material of the absorber layer includes one of: Radium, Al, Te, Cu, or Ge.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Shih Chih-Tsung
• Yu Shinn-Sheng
• Chen Jeng-Horng
• Yen Anthony

Classifications

• G03F1/54

  Absorbers, e.g. of opaque materials · CPC title

• G03F1/24 Primary

  Reflection masks; Preparation thereof · CPC title