Method and device for determining a reference point of an orientation marking on a substrate of a photolithographic mask in an automated manner

Patent metadata

Field	Value
Publication number	US-2016138907-A1
Application number	US-201414899979-A
Country	US
Kind code	A1
Filing date	Jun 16, 2014
Priority date	Jun 18, 2013
Publication date	May 19, 2016
Grant date	—

Abstract

The invention relates to a method for automated determination of a reference point of an alignment mark on a substrate of a photolithographic mask, which method comprises the following steps: (a) performing a first line scan within a start region of the substrate in a first direction on a surface of the substrate, the alignment mark being arranged within the start region, for locating a first element of the alignment mark; (b) performing a second line scan within the start region in at least a second direction, which intersects the first direction, on the surface of the substrate for locating a second element of the alignment mark; (c) estimating the reference point of the alignment mark from the located first element and the located second element of the alignment mark; and (d) imaging a target region around the estimated reference point of the alignment mark in order to determine the reference point of the alignment mark, with the imaging being carried out at a higher resolution than the performance of the line scans in steps (a) and (b).

First claim

1 . A method for automated determination of a reference point of an alignment mark on a substrate of a photolithographic mask, wherein the method comprises the following steps:
a. performing a first line scan within a start region of the substrate in a first direction on a surface of the substrate, the alignment mark being arranged within the start region, for locating a first element of the alignment mark; b. performing a second line scan within the start region in at least a second direction, which intersects the first direction, on the surface of the substrate for locating a second element of the alignment mark; c. estimating the reference point of the alignment mark from the located first element and the located second element of the alignment mark; and d. imaging a target region around the estimated reference point of the alignment mark in order to determine the reference point of the alignment mark, with the imaging being carried out at a higher resolution than the performance of the line scans in steps a. and b.

2 . The method as claimed in claim 1 , furthermore comprising the following steps:
e. performing a third and fourth line scan within an intermediate region around the estimate of the reference point of the alignment mark after step c., with the intermediate region being smaller than the start region and larger than the target region; f. re-estimating the reference point of the alignment mark from renewed locating of the first element and the second element of the alignment mark by the third line scan and fourth line scan; and g. performing step d. using the new estimate of the reference point.

3 . The method as claimed in claim 2 , furthermore comprising the following step: repeating steps e. to f. for renewed estimation of the reference point with a position inaccuracy below a predetermined threshold.

4 . The method as claimed in claim 3 , wherein the predetermined threshold is 100 μm, preferably 20 μm, more preferably 5 μm and most preferably 1 μm.

5 . The method as claimed in claim 1 , furthermore comprising the following steps:
h. performing a third and fourth line scan within the start region and outside of an intermediate region around the estimate of the reference point of the alignment mark after step c., with the intermediate region being smaller than the start region and larger than the target region; i. re-estimating the reference point of the alignment mark from renewed locating of the first element and the second element of the alignment mark by the third line scan and fourth line scan; and j. performing step d. using the new estimate of the reference point.

6 . The method as claimed in claim 1 , wherein step c. of the method comprises the following: comparing the first line scan and the second line scan with stored reference marks.

7 . The method as claimed in claim 1 , wherein the reference point is determined with a position inaccuracy of <10 μm, preferably <1 μm, more preferably <300 nm and most preferably <100 nm.

8 . The method as claimed in claim 1 , furthermore comprising the following steps:
k. shifting the start region if no reference point is estimated in step c.; and l. repeating steps a., b. and c.

9 . The method as claimed in claim 1 , wherein performing the first and the second line scan comprises the use of a confocal spectroscopic reflectometer.

10 . The method as claimed in claim 9 , wherein performing the first and the second line scan comprises the use of the confocal spectroscopic reflectometer without preceding focusing.

11 . The method as claimed in claim 9 , furthermore comprising the following step: setting the signal-to-noise ratio of the first and the second line scan by means of the distance between the substrate of the photolithographic mask and an output lens of the confocal spectroscopic reflectometer.

12 . The method as claimed in claim 1 , wherein the imaging of the target region comprises the use of a scanning electron microscope and/or a focused ion beam microscope and/or a light microscope.

13 . A device for automated determination of a reference point of an alignment mark on a substrate of a photolithographic mask, comprising:
a. means for performing a first line scan and a second line scan within a start region of the substrate in a first direction on a surface of the substrate, with the alignment mark being arranged within the start region, for locating a first element and a second element of the alignment mark; b. means for estimating the reference point of the alignment mark from the first and the second element of the alignment mark; and c. means for imaging a target region around the estimated reference point of the alignment mark for determining the reference point of the alignment mark, wherein the means for imaging the target region has a higher resolution than the means for performing the first line scan and the second line scan.

14 . The device as claimed in claim 13 , wherein the means for performing a first line scan and a second line scan has a lateral spatial resolution <100 μm, preferably <50 μm, more preferably <20 μm and most preferably <10 μm.

15 . The device as claimed in claim 13 , wherein the means for performing a first line scan and a second line scan comprises means for local scanning of the surface of the substrate.

16 . The device as claimed in claim 13 , wherein the means for performing a first line scan and a second line scan comprises:
d. a sensor embodied to direct focused electromagnetic radiation onto the substrate and receive electromagnetic radiation reflected and/or transmitted by the substrate; e. a scanning unit embodied to scan the sensor and/or the substrate in a plane perpendicular to the focused electromagnetic radiation; and f. a control unit connected to the sensor and embodied to determine a local intensity distribution from the electromagnetic radiation received by the sensor.

17 . The device as claimed in claim 16 , wherein the control unit is furthermore connected to the scanning unit and embodied for open-loop or closed-loop control of the scanning unit.

18 . The device as claimed in claim 16 , wherein the scanning unit has a spatial resolution <20 μm, preferably <10 μm, more preferably <1 μm and most preferably <0.5 μm.

19 . The device as claimed in claim 16 , wherein the sensor comprises a confocal spectroscopic reflectometer.

20 . The device as claimed in claim 19 , wherein the sensor is embodied to perform the first and second line scan without preceding focusing.

21 . The device as claimed in claim 19 , wherein the signal-to-noise ratio of the first and the second line scan is set by means of the distance between the substrate of the photolithographic mask and an output lens of the confocal spectroscopic reflectometer.

22 . The device as claimed in claim 16 , wherein the means for imaging the target region has a spatial resolution <200 nm, preferably <50 nm, more preferably <10 nm and most preferably <2 nm.

23 . The device as claimed in claim 16 , wherein the means for imaging the target region comprises a scanning electron microscope and/or a focused ion beam microscope and/or a light microscope.

24 . The device as claimed in claim 16 , wherein the means for estimating the reference point of the alignment mark comprises a processor configured to estimate the reference point of the alignment mark from the located first and second elements and/or to determine the reference

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Budach Michael
• Schönberger Ralf
• Jöst Michael

Classifications

• G03F7/70141

  Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system · CPC title

• G01B11/14 Primary

  for measuring distance or clearance between spaced objects or spaced apertures (G01B11/26 takes precedence; rangefinders G01C3/00) · CPC title

• G03F9/7007 Primary

  Alignment other than original with workpiece · CPC title

• G03F9/7088

  Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection · CPC title