Substrate holder, plasma reactor and method for depositing diamond

Patent metadata

Field	Value
Publication number	US-2016138189-A1
Application number	US-201514937359-A
Country	US
Kind code	A1
Filing date	Nov 10, 2015
Priority date	Nov 14, 2014
Publication date	May 19, 2016
Grant date	—

Abstract

A substrate holder having a base plate where a plurality of protruding poles is arranged, said poles spaced apart from one another by intermediate spaces. Alternatively or in addition, a plasma reactor for depositing diamond from the gas phase may be provided, the plasma reactor comprising such a substrate holder. A method for depositing diamond from the gas phase may be provided.

First claim

We claim:

1 . Substrate holder having a base plate, wherein a plurality of protruding poles is arranged on the base plate, said poles being spaced apart from one another by intermediate spaces.

2 . The substrate holder of claim 1 , wherein the poles and the base plate are made as a single piece.

3 . The substrate holder of claim 1 , wherein the poles are received in assigned bores of the base plate.

4 . The substrate holder of claim 1 , wherein each pole has a length and/or width or a diameter of about 1 mm to about 10 mm or wherein each pole has a height of about 3 mm to about 10 mm.

5 . The substrate holder of claim 1 , further containing a cover plate which has a plurality of bores that receive the poles.

6 . The substrate holder of claim 5 , wherein a gap of about 0.3 mm to about 1 mm is present between the rim of the bores and the outer edges of the poles.

7 . The substrate holder of claim 5 , wherein end faces of the poles are arranged about 0.3 mm to about 1.5 mm or about 0.5 mm to about 0.8 mm below an exterior surface of the cover plate.

8 . The substrate holder of claim 5 , wherein the cover plate contains a cooling device or the cover plate is provided with fluid channels in which a heat transfer medium can circulate.

9 . The substrate holder of claim 1 , wherein the poles are provided with one assigned heating device each and/or that the base plate is provided, or is in contact, with at least one heating device and/or that the poles are provided with one assigned heating resistor each.

10 . Plasma reactor for depositing diamond from the gas phase, comprising a substrate holder having a base plate, wherein a plurality of protruding poles is arranged on the base plate, said poles being spaced apart from one another by intermediate spaces.

11 . Method for depositing diamond from the gas phase, comprising:
providing at least one substrate holder having a base plate, wherein a plurality of protruding poles is arranged on the base plate, said poles spaced apart from one another by intermediate spaces; arranging at least one substrate on end faces of the poles; heating the at least one substrate to a temperature of about 700° C. to about 1000° C., while a plasma has an effect on the at least one substrate and contains layer-forming substances.

12 . The method of claim 11 , wherein there is no deposition of diamond from the gas phase between adjacent substrates.

13 . The method of claim 11 , wherein the substrates are attached to the poles by soldering.

14 . The method of claim 11 , wherein the substrates contain or consist of monocrystalline diamond.

15 . The method of claim 11 , further comprising providing a cover plate which has a plurality of bores that receive the poles, wherein the cover plate is kept at a temperature below about 600° C.

Assignees

• Fraunhofer Ges Forschung

Inventors

• Nebel Christoph E
• Müller-Sebert Wolfgang
• Widmann Claudia
• Heidrich Nicola
• Schreyvogel Christoph

Classifications

• C30B29/04

  Diamond · CPC title

• C30B25/12 Primary

  Substrate holders or susceptors · CPC title

• C23C16/4581

  characterised by material of construction or surface finish of the means for supporting the substrate · CPC title

• C30B25/20

  the substrate being of the same materials as the epitaxial layer · CPC title

• C23C16/276

  using plasma jets · CPC title