Polishing Composition and Polishing Method

Patent metadata

Field	Value
Publication number	US-2016136784-A1
Application number	US-201615004424-A
Country	US
Kind code	A1
Filing date	Jan 22, 2016
Priority date	Apr 8, 2010
Publication date	May 19, 2016
Grant date	—

Abstract

A polishing composition contains a polishing accelerator, a water-soluble polymer including a constitutional unit originating from a polymerizable compound having a guanidine structure such as dicyandiamide, and an oxidant. The water-soluble polymer may be a water-soluble polymer including a constitutional unit originating from dicyandiamide and a constitutional unit originating from formaldehyde, a diamine or a polyamine.

First claim

1 .- 10 . (canceled)

11 . A method of polishing an object having a conductor layer made of copper or a copper alloy, the method comprising:
preparing a polishing composition containing a polishing accelerator, a water-soluble polymer including a constitutional unit originating from a polymerizable compound having a guanidine structure, and an oxidant; and using the polishing composition to polish a surface of the object.

12 . The method according to claim 11 , wherein the polymerizable compound having a guanidine structure is a compound represented by the following general formula (1) or (2),

where, R 1 , R 2 , R 3 , R 4 , R 5 and R 6 each represent independently a hydrogen atom, a hydroxyl group, an amino group, a carboxyl group, a phenyl group, an acetyl group, or an unsubstituted or substituted alkyl group having 1 to 4 carbon atoms.

13 . The method according to claim 11 , wherein the water-soluble polymer includes a constitutional unit originating from dicyandiamide and a constitutional unit originating from formaldehyde.

14 . The method according to claim 13 , wherein the water-soluble polymer includes a constitutional unit originating from dicyandiamide and a constitutional unit originating from a diamine or a polyamine.

15 . The method according to claim 11 , wherein the polishing accelerator is an amino acid or a chelating agent.

16 . The method according to claim 11 , wherein the oxidant is hydrogen peroxide.

17 . The method according to claim 11 , further comprising adding abrasive grains to the polishing composition prior to said using.

18 . The method according to claim 17 , wherein the abrasive grains are colloidal silica.

19 . The method according to claim 11 , further comprising adding a protective film forming agent to the polishing composition prior to said using.

20 . The method according to claim 19 , wherein the protective film forming agent is a heterocyclic compound or a surfactant.

21 . The method according to claim 11 , wherein the water-soluble polymer includes a constitutional unit originating from dicyandiamide.

22 . The method according to claim 20 , wherein the protective film forming agent is a surfactant, the surfactant containing at least one selected from the group consisting of an anionic surfactant, a cationic surfactant, and an amphoteric surfactant.

23 . The method according to claim 11 , wherein the water-soluble polymer has a molecular weight of 500 or more and 100,000 or less.

24 . The method according to claim 11 , wherein the water-soluble polymer is contained in the polishing composition in an amount of 0.001 g/L or more and 1 g/L or less.

25 . The method according to claim 11 , wherein the polishing accelerator is a chelating agent selected from the group consisting of nitrilotriacetic acid, diethylenetriamine pentaacetic acid, ethylenediamine tetraacetic acid, N,N,N-trimethylene phosphonic acid, ethylenediamine-N,N,N′,N′-tetramethylene sulfonic acid, transcyclohexanediamine tetraacetic acid, 1,2-diaminopropane tetraacetic acid, glycoletherdiamine tetraacetic acid, ethylenediamineorthohydroxyphenyl acetic acid, ethylenediaminesuccinic acid (SS isomer), N-(2-carboxyl atoethyl)-L-aspartic acid, β-alanine diacetic acid, 2-phosphonobutane-1,2,4-tricarboxylic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, N,N′-bis(2-hydroxybenzyl)ethylenediamine-N,N′-diacetic acid, and 1,2-dihydroxybenzene-4,6-disulfonic acid.

Assignees

• Fujimi Inc

Inventors

• Hirano Tatsuhiko
• Tamada Shuichi
• Umeda Takahiro

Classifications

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• C09G1/18

  on other substances · CPC title

• C09G1/02

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24C1/08 Primary

  for polishing surfaces, e.g. {smoothing a surface} by making use of liquid-borne abrasives · CPC title