Semiconductor device package and method of manufacturing the same
US-2016358862-A1 · Dec 8, 2016 · US
US2016133579A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016133579-A1 |
| Application number | US-201514872973-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 1, 2015 |
| Priority date | Nov 7, 2014 |
| Publication date | May 12, 2016 |
| Grant date | — |
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The present invention provides an electromagnetic wave shielding support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon or a semiconductor device forming surface of a wafer having semiconductor devices formed thereon, the support base-attached encapsulant including a support base having an electromagnetic wave shielding property of 20 dB or more within a range of 100 MHz to 1,000 MHz, and an encapsulant composed of a thermosetting resin layer laminated on the support base. There can be provided a support base-attached encapsulant that can collectively encapsulate a semiconductor device mounting surface of a substrate having the semiconductor devices mounted thereon or a semiconductor device forming surface of a wafer having semiconductor devices formed thereon without occurrence of warping of the substrate or the wafer, peeling of the semiconductor devices from the substrate, and breakage of the wafer even in the case that a large-diameter wafer or a large-area substrate such as inorganic, organic, or metal substrate, especially thin one, is encapsulated, and that has excellent electromagnetic wave shielding property, reliability such as heat resistance and moisture resistance after encapsulating, and extremely high versatility, mass-productivity, workability, and economical efficiency.
Opening claim text (preview).
What is claimed is: 1 . An electromagnetic wave shielding support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon or a semiconductor device forming surface of a wafer having semiconductor devices formed thereon, the support base-attached encapsulant comprising a support base having an electromagnetic wave shielding property of 20 dB or more within a range of 100 MHz to 1,000 MHz, and an encapsulant composed of a thermosetting resin layer laminated on the support base. 2 . The electromagnetic wave shielding support base-attached encapsulant according to claim 1 , wherein the support base contains a resin having electromagnetic wave shielding property. 3 . The electromagnetic wave shielding support base-attached encapsulant according to claim 1 , wherein the support base contains a resin and a fiber base, and either or both of the resin and the fiber base have electromagnetic wave shielding property. 4 . The electromagnetic wave shielding support base-attached encapsulant according to claim 1 , wherein the support base contains a layer composed of a metal. 5 . The electromagnetic wave shielding support base-attached encapsulant according to claim 2 , wherein the support base contains a layer composed of a metal. 6 . The electromagnetic wave shielding support base-attached encapsulant according to claim 3 , wherein the support base contains a layer composed of a metal. 7 . An encapsulated substrate having semiconductor devices mounted thereon, obtained by covering a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 1 , and heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor device mounting surface by the electromagnetic wave shielding support base-attached encapsulant. 8 . An encapsulated substrate having semiconductor devices mounted thereon, obtained by covering a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 2 , and heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor device mounting surface by the electromagnetic wave shielding support base-attached encapsulant. 9 . An encapsulated substrate having semiconductor devices mounted thereon, obtained by covering a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 3 , and heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor device mounting surface by the electromagnetic wave shielding support base-attached encapsulant. 10 . An encapsulated substrate having semiconductor devices mounted thereon, obtained by covering a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 4 , and heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor device mounting surface by the electromagnetic wave shielding support base-attached encapsulant. 11 . An encapsulated substrate having semiconductor devices mounted thereon, obtained by covering a semiconductor device mounting surface, of a substrate having semiconductor devices mounted thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 5 , and heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor device mounting surface by the electromagnetic wave shielding support base-attached encapsulant. 12 . An encapsulated substrate having semiconductor devices mounted thereon, obtained by covering a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 6 , and heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor device mounting surface by the electromagnetic wave shielding support base-attached encapsulant. 13 . An encapsulated wafer having semiconductor devices formed thereon, obtained by covering a semiconductor device forming surface of a wafer having semiconductor devices formed thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 1 , and heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor device forming surface by the electromagnetic wave shielding support base-attached encapsulant. 14 . An encapsulated wafer having semiconductor devices formed thereon, obtained by covering a semiconductor device forming surface of a wafer having semiconductor devices formed thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 2 , and heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor device forming surface by the electromagnetic wave shielding support base-attached encapsulant. 15 . An encapsulated wafer having semiconductor devices formed thereon, obtained by covering a semiconductor device forming surface of a wafer having semiconductor devices formed thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 3 , and heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor device forming surface by the electromagnetic wave shielding support base-attached encapsulant. 16 . An encapsulated wafer having semiconductor devices formed thereon, obtained by covering a semiconductor device forming surface of a wafer having semiconductor devices formed thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 4 , and heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor device forming surface by the electromagnetic wave shielding support base-attached encapsulant. 17 . An encapsulated wafer having semiconductor devices formed thereon, obtained by covering a semiconductor device forming surface of a wafer having semiconductor devices formed thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 5 , and heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor device forming surface by the electromagnetic wave shielding support base-attached encapsulant. 18 . An encapsulated wafer having semiconductor devices formed thereon, obtained by covering a semiconductor device forming surface of a wafer having semiconductor devices formed thereon with the thermosetting resin layer of the electromagnetic wave shielding support base-attached encapsulant according to claim 6 , and heating and curing the thermosetting resin layer to collectively en
materials for magnetic shielding, e.g. ferromagnetic materials · CPC title
shielding resins · CPC title
Encapsulations, e.g. protective coatings · CPC title
batch processes · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
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