Multi-layer laser debonding structure with tunable absorption

Patent metadata

Field	Value
Publication number	US-2016133497-A1
Application number	US-201414535909-A
Country	US
Kind code	A1
Filing date	Nov 7, 2014
Priority date	Nov 7, 2014
Publication date	May 12, 2016
Grant date	—

Abstract

The absorption properties of both an adhesive layer and an ablation layer are employed to facilitate debonding of a device wafer and a glass handler without damaging the device wafer. The penetration depths of the adhesive and ablation layers are selected such that no more than a negligible amount of the ablation fluence reaches the surface of the device wafer.

First claim

1 - 9 . (canceled)

10 . A structure comprising:
a device wafer; an adhesive layer adhered to the device wafer, the adhesive layer having an optical penetration depth of between two and twenty microns at a selected wavelength between 308 nm and 355 nm and a thickness of at least one penetration depth; a UV-transmissive handler; an ablation layer between the UV-transmissive handler and the adhesive layer, the ablation layer having an optical penetration depth of between 0.1 and 0.2 microns at the selected wavelength and having a thickness of at least two penetration depths, the ablation layer being further subject to decomposition upon being subjected to laser fluence.

11 . The structure of claim 10 , wherein the handler consists essentially of a glass material substantially transparent to the selected wavelength.

12 . The structure of claim 11 , wherein the adhesive layer includes a dye that absorbs light of the selected wavelength.

13 . The structure of claim 11 , wherein the adhesive layer includes nanoparticles suspended therein for scattering UV light of the selected wavelength.

14 . The structure of claim 10 , wherein the adhesive layer has instrinsic optical absorption properties at the selected wavelength.

15 . The structure of claim 10 , wherein the ablation layer has intrinsic optical absorption properties at the selected wavelength.

16 . The structure of claim 15 , wherein the ablation layer comprises an organic planarizing layer.

17 . The structure of claim 10 , wherein the ablation layer includes a dye that absorbs light of the selected wavelength.

18 . The structure of claim 10 , wherein the ablation layer has a thickness of less than 0.5 μm.

19 . The structure of claim 10 wherein the thickness of the ablation layer is between two and four penetration depths at the selected wavelength.

20 . The structure of claim 19 wherein the thickness of the adhesive layer is between one and two penetration depths at the selected wavelength.

Assignees

• IBM

Inventors

• Andry Paul S
• Gelorme Jeffrey D
• Tsang Cornelia Kang-I
• Webb Bucknell C

Classifications

• H10P72/7448

  the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer · CPC title

• B32B2457/14

  Semiconductor wafers · CPC title

• B32B7/12

  using interposed adhesives or interposed materials with bonding properties · CPC title

• B32B2307/4026

  within the layer by addition of a colorant, e.g. pigments, dyes · CPC title

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title