Bonding method of semiconductor chip and bonding apparatus of semiconductor chip

Patent metadata

Field	Value
Publication number	US-2016126218-A1
Application number	US-201514710070-A
Country	US
Kind code	A1
Filing date	May 12, 2015
Priority date	Oct 30, 2014
Publication date	May 5, 2016
Grant date	—

Abstract

According to one embodiment, there is provided a bonding method of a semiconductor chip. The bonding method includes arranging an activated front surface of a semiconductor chip and an activated front surface of a substrate so as to face each other with a back surface of the semiconductor chip attached to a sheet. The bonding method includes pushing the back surface of the semiconductor chip through the sheet to closely attach the activated front surface of the semiconductor chip and the activated front surface of the substrate. The bonding method includes stripping the sheet from the back surface of the semiconductor chip while maintaining a state in which the activated front surface of the semiconductor chip is closely attached to the activated front surface of the substrate.

First claim

What is claimed is:

1 . A bonding method of a semiconductor chip comprising:
arranging an activated front surface of a semiconductor chip and an activated front surface of a substrate so as to face each other with a back surface of the semiconductor chip attached to a sheet; pushing the back surface of the semiconductor chip through the sheet to closely attach the activated front surface of the semiconductor chip and the activated front surface of the substrate; and stripping the sheet from the back surface of the semiconductor chip while maintaining a state in which the activated front surface of the semiconductor chip is closely attached to the activated front surface of the substrate.

2 . The bonding method of the semiconductor chip according to claim 1 , further comprising
irradiating the front surface of the semiconductor chip with a plasma or an energy beam with the back surface of the semiconductor chip attached to the sheet to activate the front surface before the arranging.

3 . The bonding method of the semiconductor chip according to claim 1 , further comprising
heating the semiconductor chip after the stripping.

4 . The bonding method of the semiconductor chip according to claim 1 , wherein
a vicinity of the front surface of the semiconductor chip is made of a material having any one of a silicon, a silicon oxide, a III-V group semiconductor, or an oxide of the III-V group semiconductor as a main component.

5 . The bonding method of the semiconductor chip according to claim 1 , wherein
the substrate includes a semiconductor substrate or a glass substrate.

6 . The bonding method of the semiconductor chip according to claim 5 , wherein
a vicinity of the front surface of the semiconductor substrate is made of a material having a silicon or a silicon oxide as a main component.

7 . The bonding method of the semiconductor chip according to claim 1 , wherein
the front surface of the semiconductor chip has planarity of smaller than or equal to 1 nm.

8 . The bonding method of the semiconductor chip according to claim 1 , wherein
the front surface of the substrate has planarity of smaller than or equal to 1 nm.

9 . The bonding method of the semiconductor chip according to claim 1 , wherein
the arranging includes arranging activated front surfaces of a plurality of semiconductor chips and the activated front surface of the substrate so as to face each other with back surfaces of the plurality of semiconductor chips attached to the sheet, the closely attaching includes pushing the back surface of the semiconductor chip selected from the plurality of semiconductor chips through the sheet to closely attach the activated front surface of the selected semiconductor chip and the activated front surface of the substrate, and the stripping includes stripping the sheet from the back surface of the selected semiconductor chip.

10 . The bonding method of the semiconductor chip according to claim 9 , further comprising
widening an interval of the plurality of semiconductor chips before the arranging.

11 . The bonding method of the semiconductor chip according to claim 10 , wherein
the widening includes widening the interval of the plurality of semiconductor chips to greater than a thickness of the semiconductor chip.

12 . The bonding method of the semiconductor chip according to claim 9 , wherein
the closely attaching includes pushing the back surface of the selected semiconductor chip through the sheet while holding a region at a periphery of the selected semiconductor chip in the sheet.

13 . The bonding method of the semiconductor chip according to claim 12 , wherein
the holding includes suctioning and holding the region at the periphery of the selected semiconductor chip in the sheet.

14 . The bonding method of the semiconductor chip according to claim 9 , further comprising:
attaching a front surface of a second semiconductor substrate to a second sheet; dividing the second semiconductor substrate to singulate to the plurality of semiconductor chips; and attaching the back surfaces of the singulated plurality of semiconductor chips to the sheet, and transferring the plurality of semiconductor chips from the second sheet to the sheet.

15 . A bonding apparatus of a semiconductor chip comprising:
an arrangement mechanism configured to arrange an activated front surface of a semiconductor chip and an activated front surface of a substrate so as to face each other with a back surface of the semiconductor chip attached to a sheet; and a pushing mechanism configured to push the back surface of the semiconductor chip through the sheet to closely attach the activated front surface of the semiconductor chip to the activated front surface of the substrate, and strip the sheet from the back surface of the semiconductor chip while maintaining a state in which the activated front surface of the semiconductor chip is closely attached to the activated front surface of the substrate.

16 . The bonding apparatus of the semiconductor chip according to claim 15 , wherein
the pushing mechanism includes, a pushing head including a pushing surface corresponding to the back surface of the semiconductor chip, and a pin configured to be changed between a state retracted toward the pushing head side than the pushing surface and a state projected out from the pushing surface.

17 . The bonding apparatus of the semiconductor chip according to claim 16 , wherein
the pushing head includes a buffer member on the pushing surface.

18 . The bonding apparatus of the semiconductor chip according to claim 16 , wherein
the pushing head has a suctioning structure of suctioning the sheet.

19 . The bonding apparatus of the semiconductor chip according to claim 15 , further comprising a holding mechanism arranged at a periphery of the pushing mechanism, wherein
the pushing mechanism pushes the back surface of the semiconductor chip through the sheet toward the substrate side with a region around a region to be pushed with the pushing mechanism in the sheet held by the holding mechanism.

20 . The bonding apparatus of the semiconductor chip according to claim 15 , further comprising:
a recognition mechanism configured to recognize the substrate and the semiconductor chip; and an alignment mechanism configured to align relative positions of the semiconductor chip and the substrate based on a recognition result of the recognition mechanism, wherein the pushing mechanism pushes the back surface of the semiconductor chip through the sheet with the relative positions of the semiconductor chip and the substrate aligned.

Assignees

• Toshiba Kk

Inventors

• Kurita Yoichiro

Classifications

• H10W72/0198

  batch processes · CPC title

• H10P70/30

  Cleaning after the substrates have been singulated · CPC title

• H10W72/07331

  Connecting techniques · CPC title

• H10W72/07183

  Means for monitoring · CPC title

• H10W72/07178

  Means for aligning · CPC title