Prestructured substrate for the production of photonic components, associated photonic circuit and manufacturing method

Patent metadata

Field	Value
Publication number	US-2016124145-A1
Application number	US-201514884126-A
Country	US
Kind code	A1
Filing date	Oct 15, 2015
Priority date	Oct 29, 2014
Publication date	May 5, 2016
Grant date	—

Abstract

A substrate locally pre-structured for the production of photonic components including a solid part made of silicon; a first localised region of the substrate, including a heat dissipation layer, produced in a localised manner on the surface of the solid part and made of a material of which the refractive index is less than that of silicon; a wave guide on the heat dissipation layer; a second localised region of the substrate, including an oxide layer produced in a localised manner on the surface of the solid part, the oxide having a heat conductivity less than that of the material of the heat dissipation layer; a wave guide on the oxide layer.

First claim

1 . A substrate locally pre-structured for the production of photonic components, comprising:
a solid part made of silicon; a first localised region of the substrate, comprising:
heat dissipation layer, produced in a localised manner on the surface of the solid part and made of a material of which the refractive index is less than that of silicon;
a wave guide on the heat dissipation layer;
a second localised region of the substrate, separate from the first region, comprising:
an oxide layer produced in a localised manner on the surface of the solid part, the oxide having a heat conductivity less than that of the material of the heat dissipation layer;
a wave guide on the oxide layer.

2 . The substrate according to claim 1 , in which the wave guide of the first region is made of monocrystalline silicon transferred from a donor substrate onto the heat dissipation layer and the wave guide of the second region is made of monocrystalline silicon also transferred from the donor substrate onto the oxide layer of the second region.

3 . The substrate according to claim 1 , in which the heat dissipation layer of the first region forms a confined area of the substrate which is surrounded by oxide.

4 . The substrate according to claim 1 , in which the oxide layer of the second region is a layer of SiO2 or TiO2.

5 . The substrate according to claim 1 , further comprising a third localised region of the substrate which is formed on a localised superficial portion of the solid part in which ions are implanted to increase the resistivity thereof, the third region comprising an oxide layer on said superficial portion and a modulation section of pn or pin diode type made of doped monocrystalline silicon on the oxide layer.

6 . The substrate according to claim 5 , in which the third region further includes a passivation layer intersected between said superficial portion and the first oxide layer.

7 . The substrate according to claim 1 , further comprising a fourth localised region of the substrate which includes a multilayer mirror produced in a localised manner on the solid part and made of an alternation of layers of oxide and of silicon, and an optical fibre coupling section on the multilayer mirror.

8 . The substrate according to claim 1 , further comprising a fifth localised region of the substrate which includes an oxide layer on the solid part, said oxide layer incorporating a metal layer, and an optical fibre coupling section on the oxide layer.

9 . The substrate according to claim 1 , comprising a sixth localised region of the substrate which includes a layer on the solid part, said layer incorporating a metal layer, and a wave guide on said layer.

10 . The substrate according to claim 9 , in which the layer of the sixth region is an oxide layer or a layer of which the heat conductivity is greater than that of the oxide and of which the refractive index is less than that of silicon.

11 . The substrate according to claim 1 , in which the heat dissipation layer is a layer of aluminium nitride.

12 . A photonic circuit comprising a semi-conductor optical amplifier lying on a localised region of a substrate comprising a solid part made of silicon, said region comprising:
a heat dissipation layer, produced in a localised manner on the surface of the solid part made of a material of which the refractive index is less than that of silicon; a wave guide on the heat dissipation layer; a layer covering the wave guide made of an oxide of which the heat conductivity is less than that of the heat dissipation layer.

13 . A method of manufacturing a substrate comprising the steps of:
forming on a first zone of a solid part made of silicon a heat dissipation layer, made of a material of which the refractive index is less than that of silicon; forming on a second zone of the solid part made of silicon an oxide layer which the heat conductivity is less than that of the material of the heat dissipation layer; transferring from a donor substrate the material constituting a wave guide of the first region and a wave guide of the second region onto respectively the heat dissipation layer and the oxide layer.

14 . The method according to claim 13 , in which the transferring includes transferring a monocrystalline silicon layer from the donor substrate and which further comprises a step of forming the wave guide of the first region and the wave guide of the second region from the transferred monocrystalline silicon layer.

15 . The method according to claim 13 , further comprising, before the step of transferring from the donor substrate, a step of forming the wave guide of the first region and the wave guide of the second region in an intermediate substrate and a step of transferring the wave guide of the first region and the wave guide of the second region of the intermediate substrate to the donor substrate.

Assignees

• Commissariat Energie Atomique

Inventors

• Hassan Karim
• Sciancalepore Corrado
• Duprez Helene
• Ben Bakir Badhise

Classifications

• H01S5/3031

  Si · CPC title

• G02B2006/12135

  Temperature control · CPC title

• G02B6/30

  for use between fibre and thin-film device · CPC title

• G02B6/122 Primary

  Basic optical elements, e.g. light-guiding paths · CPC title

• G02B6/12004 Primary

  Combinations of two or more optical elements · CPC title