SiC Single-Crystal Ingot, SiC Single Crystal, and Production Method for Same
US-2015191849-A1 · Jul 9, 2015 · US
Method for producing sic single crystal
US2016122901A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016122901-A1 |
| Application number | US-201514920397-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 22, 2015 |
| Priority date | Oct 31, 2014 |
| Publication date | May 5, 2016 |
| Grant date | — |
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Abstract
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A method for producing a SiC single crystal, comprising using a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface to grow a SiC single crystal from a seed crystal substrate, wherein the Si—C solution includes Si and Cr, the boron density difference Bs−Bg between the boron density Bs in the seed crystal substrate and the boron density Bg in the growing single crystal is 1×10 17 /cm 3 or greater, the chromium density difference Crg−Crs between the chromium density Crs in the seed crystal substrate and the chromium density Crg in the growing single crystal is 1×10 16 /cm 3 or greater, and the nitrogen density difference Ng−Ns between the nitrogen density Ns in the seed crystal substrate and the nitrogen density Ng in the growing single crystal is 3.5×10 18 /cm 3 to 5.8×10 18 /cm 3 .
First claim
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What is claimed is: 1 . A method for producing a SiC single crystal, comprising using a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface to grow a SiC single crystal from a SiC seed crystal substrate, wherein: the Si—C solution includes Si and Cr, the boron density difference Bs−Bg between the boron density Bs in the seed crystal substrate and the boron density Bg in the growing SiC single crystal is 1×10 17 /cm 3 or greater, the chromium density difference Crg−Crs between the chromium density Crs in the seed crystal substrate and the chromium density Crg in the growing SiC single crystal is 1×10 16 /cm 3 or greater, and the nitrogen density difference Ng−Ns between the nitrogen density Ns in the seed crystal substrate and the nitrogen density Ng in the growing SiC single crystal is 3.5×10 18 /cm 3 to 5.8×10 18 /cm 3 . 2 . The method for producing a SiC single crystal according to claim 1 , wherein the boron density difference Bs−Bg is 8×10 17 /cm 3 or greater. 3 . The method for producing a SiC single crystal according to claim 1 , wherein the chromium density difference Crg−Crs is 6×10 16 /cm 3 or greater. 4 . The method for producing a SiC single crystal according to claim 1 , wherein the seed crystal substrate is one that has been grown by a sublimation process. 5 . The method for producing a SiC single crystal according to claim 1 , wherein the Si—C solution has a composition of Si/Cr=50 to 80/20 to 50, as the atomic composition percentage. 6 . The method for producing a SiC single crystal according to claim 1 , wherein the Si—C solution has a surface temperature of 1800 to 2200° C.
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- C30B19/04Primary
the solvent being a component of the crystal composition · CPC title
Carbides · CPC title
Controlling or regulating (controlling or regulating in general G05) · CPC title
adding crystallising material or reactants forming it in situ to the liquid · CPC title
characterised by the substrate · CPC title
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- What does patent US2016122901A1 cover?
- A method for producing a SiC single crystal, comprising using a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface to grow a SiC single crystal from a seed crystal substrate, wherein the Si—C solution includes Si and Cr, the boron density difference Bs−Bg between the boron density Bs in the seed crystal substrate and the boron den…
- Who is the assignee on this patent?
- Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B19/04. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu May 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).