Tunable laser with high thermal wavelength tuning efficiency

Patent metadata

Field	Value
Publication number	US-2016118772-A1
Application number	US-201514986239-A
Country	US
Kind code	A1
Filing date	Dec 31, 2015
Priority date	Apr 30, 2013
Publication date	Apr 28, 2016
Grant date	—

Abstract

A monolithically integrated thermal tunable laser comprising a layered substrate comprising an upper surface and a lower surface, and a thermal tuning assembly comprising a heating element positioned on the upper surface, a waveguide layer positioned between the upper surface and the lower surface, and a thermal insulation layer positioned between the waveguide layer and the lower surface, wherein the thermal insulation layer is at least partially etched out of an Indium Phosphide (InP) sacrificial layer, and wherein the thermal insulation layer is positioned between Indium Gallium Arsenide (InGaAs) etch stop layers.

First claim

What is claimed is:

1 . A monolithically integrated thermal tunable laser, comprising:
a layered substrate, comprising:
a plurality of Indium Gallium Arsenide (InGaAs) etch stop layers; and
an Indium Aluminum Arsenide (InAlAs) sacrificial layer positioned between the plurality of InGaAs etch stop layers;
a heating element attached to the layered substrate; and a thermal isolation layer etched into the layered substrate and bounded by the InGaAs etch stop layers;
wherein a portion of the InAlAs sacrificial layer is etched out to create the thermal isolation layer.

2 . The thermal tunable laser of claim 1 , wherein a suspended thermal isolation structure is positioned substantially above the thermal isolation layer.

3 . The thermal tunable laser of claim 1 , further comprising an Indium Phosphide (InP) sacrificial layer positioned between the plurality of InGaAs etch stop layers, wherein the InAlAs sacrificial layer is positioned at least partially inside the InP sacrificial layer.

4 . The thermal tunable laser of claim 3 , wherein the InAlAs sacrificial layer is positioned completely inside the InP sacrificial layer.

5 . The thermal tunable laser of claim 3 , wherein the InAlAs sacrificial layer is positioned to support etching along a horizontal axis, and wherein the InP sacrificial layer is positioned to support etching along a vertical axis.

6 . The thermal tunable laser of claim 1 , further comprising a waveguide layer positioned between the heating element and an upper InGaAs etch stop layer of the plurality of InGaAs etch stop layers.

7 . The thermal tunable laser of claim 1 , wherein the upper surface of the layered substrate comprises a dielectric layer and wherein the layered substrate further comprises:
an InP based cladding layer, wherein the plurality of InGaAs etch stop layers comprise an upper etch stop layer and a lower etch stop layer, and wherein the cladding layer is positioned between the dielectric layer and the upper etch stop layer.

8 . The thermal tunable laser of claim 1 , wherein the thermal tunable laser further comprises a front mirror and a back mirror, wherein the heating element is positioned between the mirrors, and wherein at least one of the mirrors is configured to selectively reflect light traversing the waveguide layer based on heat generated by the heating element.

9 . The thermal tunable laser of claim 1 , wherein the heating element comprises Titanium (Ti), Platinum (Pt), or combinations thereof.

10 . The thermal tunable laser of claim 1 , wherein the heating element is configured to selectively change a local temperature to selectively tune a wavelength of an optical signal.

11 . The thermal tunable laser of claim 1 , wherein the heating element is configured to heat a mirror, a waveguide, or both based on an electrical input.

12 . A monolithically integrated thermal tunable laser, comprising:
a layered substrate, comprising:
a plurality of Indium Gallium Arsenide (InGaAs) etch stop layers;
an Indium Phosphide (InP) sacrificial layer positioned between the plurality of InGaAs etch stop layers; and
an Indium Aluminum Arsenide (InAlAs) sacrificial layer positioned between the plurality of InGaAs etch stop layers and positioned at least partially inside the InP sacrificial layer;
a heating element attached to the layered substrate; and a thermal isolation layer etched into the layered substrate and bounded by the plurality of InGaAs etch stop layers;
wherein at least a first portion of the InP sacrificial layer is etched out to create the thermal isolation layer; and
wherein at least a first portion of the InAlAs sacrificial layer is etched out to complete the thermal isolation layer.

13 . The thermal tunable laser of claim 12 , wherein a suspended thermal isolation structure is positioned substantially above the thermal isolation layer.

14 . The thermal tunable laser of claim 12 , wherein the InAlAs sacrificial layer is positioned completely inside the InP sacrificial layer.

15 . The thermal tunable laser of claim 12 , wherein the InAlAs sacrificial layer is positioned to support etching along a horizontal axis, and wherein the InP sacrificial layer is positioned to support etching along a vertical axis.

16 . The thermal tunable laser of claim 12 , wherein the InAlAs sacrificial layer is the only InAlAs layer in the thermal tunable laser.

17 . The thermal tunable laser of claim 12 , further comprising a waveguide layer positioned between the heating element and an upper InGaAs etch stop layer of the plurality of InGaAs etch stop layers.

18 . The thermal tunable laser of claim 12 , wherein the upper surface of the layered substrate comprises a dielectric layer and wherein the layered substrate further comprises:
an InP based cladding layer, wherein the plurality of InGaAs etch stop layers comprise an upper etch stop layer and a lower etch stop layer, and wherein the cladding layer is positioned between the dielectric layer and the upper etch stop layer.

19 . The thermal tunable laser of claim 12 , wherein the thermal tunable laser further comprises a front mirror and a back mirror, wherein the heating element is positioned between the mirrors, and wherein at least one of the mirrors is configured to selectively reflect light traversing the waveguide layer based on heat generated by the heating element.

20 . The thermal tunable laser of claim 12 , wherein the heating element comprises Titanium (Ti), Platinum (Pt), or combinations thereof.

21 . The thermal tunable laser of claim 12 , wherein the heating element is configured to selectively change a local temperature to selectively tune a wavelength of an optical signal.

22 . The thermal tunable laser of claim 12 , wherein the heating element is configured to heat a mirror, a waveguide, or both based on an electrical input.

Assignees

• Futurewei Technologies Inc

Inventors

• Chen Hongmin
• Yan Xuejin
• Miao Rongsheng
• Shen Xiao
• Liu Zongrong

Classifications

• H10P50/28

  of insulating materials · CPC title

• H01S5/209

  special etch stop layers · CPC title

• H01S2301/176

  Specific passivation layers on surfaces other than the emission facet · CPC title

• H01S5/2045

  employing free standing waveguides or air gap confinement · CPC title

• H01S5/02461

  Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity · CPC title