Submount and manufacturing method thereof and semiconductor laser device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2016118767-A1
Application number	US-201514920134-A
Country	US
Kind code	A1
Filing date	Oct 22, 2015
Priority date	Oct 24, 2014
Publication date	Apr 28, 2016
Grant date	—

Abstract

The method includes the steps of: preparing a single crystal SiC including an upper surface 10 a and a lower surface 10 b and provided with a micropipe 11 penetrating from the upper surface 10 a to the lower surface 10 b ; forming a first seed layer 21 made of a metal material on the upper surface 10 a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11 , using an electroplating method.

First claim

What is claimed is:

1 . A manufacturing method of a submount, comprising:
preparing a single crystal SiC including an upper surface and a lower surface and provided with a micropipe penetrating from the upper surface to the lower surface; forming a first seed layer made of a metal material on the upper surface of the single crystal SiC; and forming a first plated layer on the first seed layer so as to close an upper end of the micropipe, using an electroplating method.

2 . The manufacturing method of a submount according to claim 1 , further comprising:
removing a part of the first plated layer from an upper surface side of the first plated layer and planarizing the upper surface of the first plated layer, after the forming the first plated layer.

3 . The manufacturing method of a submount according to claim 1 , wherein the first seed layer includes at least one of Ti, Pt, Au, Ni, Pd, and Cu, and the first plated layer is made of Cu.

4 . The manufacturing method of a submount according to claim 1 ,
wherein a wafer-like single crystal SiC is prepared in the preparing the single crystal SiC, and the method further comprises: forming a grid-like first mask on the wafer-like single crystal SiC, before the forming the first plated layer; and removing the first mask and dividing a region from which the first mask has been removed, after the forming the first plated layer.

5 . The manufacturing method of a submount according to claim 1 , wherein in the forming the first seed layer, the first seed layer is formed by a sputtering method and is formed by inclining a target surface of a sputtering target with respect to the upper surface of the single crystal SiC.

6 . The manufacturing method of a submount according to claim 4 , further comprising:
forming a second mask that closes the micropipe before the forming the first seed layer; and removing the second mask after the forming the first seed layer.

7 . A manufacturing method of a semiconductor laser device comprising:
manufacturing a submount by the manufacturing method of a submount according to claim 1 ; and mounting a semiconductor laser element on a lower surface side of the submount via a conductive member.

8 . The manufacturing method of a semiconductor laser device according to claim 7 , wherein the first plated layer is formed only on an upper surface of the submount.

9 . The manufacturing method of a semiconductor laser device according to claim 7 , wherein an intermediate layer is formed on a lower surface of the submount before the mounting the semiconductor laser element.

10 . A submount comprising:
a single crystal SiC including an upper surface and a lower surface and provided with a micropipe penetrating from the upper surface to the lower surface; a first seed layer made of a metal material and provided on the upper surface of the single crystal SiC; and a first plated layer provided on an upper surface of the first seed layer so as to close an upper end of the micropipe.

11 . The submount according to claim 10 , wherein
a second seed layer made of a metal material is provided on the lower surface of the single crystal SiC, and a second plated layer that closes a lower end of the micropipe is provided on the lower surface of the second seed layer.

12 . The submount according to claim 10 , wherein the first plated layer is formed only on the upper surface side of the single crystal SiC.

13 . The submount according to claim 10 , wherein the first seed layer has a thickness of 0.02 μm or more and 1.5 μm or less.

14 . The submount according to claim 10 , wherein the first plated layer has a thickness of 1 μm or more and 100 μm or less.

15 . The submount according to claim 10 , wherein the first seed layer includes at least one of Ti, Pt, Au, Ni, Pd, and Cu, and the first plated layer is made of Cu.

16 . The submount according to claim 10 , wherein thickness of the first plated layer is greater than thickness of the second plated layer.

17 . A semiconductor laser device comprising the submount according to 10 , wherein a semiconductor laser element is mounted on a lower surface side of the submount via a conductive member.

18 . The semiconductor laser device according to claim 17 wherein the conductive member is a eutectic solder.

19 . The semiconductor laser device according to claim 17 , wherein an intermediate layer is provided between the conductive member and the single crystal.

20 . The semiconductor laser device according to claim 17 , wherein a semiconductor laser element is mounted on a lower surface side of the submount via a conductive member.

Assignees

• Nichia Corp

Inventors

• Yoneda Akinori
• Sonobe Shinya
• Yuto Hiroaki

Classifications

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• C23C14/185 Primary

  by cathodic sputtering · CPC title

• C23C14/34

  Sputtering · CPC title

• C25D3/38

  of copper · CPC title

• C25D5/022

  using masking means · CPC title