Substrates for thin-film magnetic heads, magnetic head sliders, and hard disk drive devices
US-2015380025-A1 · Dec 31, 2015 · US
US2016118075A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016118075-A1 |
| Application number | US-201614987083-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 4, 2016 |
| Priority date | Apr 24, 2012 |
| Publication date | Apr 28, 2016 |
| Grant date | — |
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A heat assisted magnetic recording (HAMR) assembly includes a slider, a laser diode and solder connections between the laser diode and the slider. The solder connections mechanically and electrically attach the laser diode to the slider. Each solder connection has a total volume per unit area (i.e., height) of less than or equal to about 15 μm. The solder connections have a first intermetallic zone adjacent to the laser diode, a second intermetallic zone adjacent to the slider, and a eutectic zone of eutectic material between the first and second intermetallic zones. The eutectic zone occupies greater than or equal to about 35% of the total volume per unit area of the solder connection.
Opening claim text (preview).
1 - 21 . (canceled) 22 . A heat assisted magnetic recording (HAMR) assembly, comprising; a slider comprising read and write transducers; a laser diode; solder connections between the laser diode and the slider that mechanically and electrically attach the laser diode to the slider, each solder connection having a surface area at the laser diode of less than 300 μm 2 , a surface area at the slider of less than 300 μm 2 , a total volume per unit area of less than or equal to 8 μm, and having a first intermetallic zone adjacent to the laser diode, a second intermetallic zone adjacent to the slider, and a eutectic zone of eutectic material between the first and second intermetallic zones, the eutectic zone occupying greater than or equal to about 35% of the total volume per unit area of the solder connection. 23 . The assembly of claim 22 , wherein the eutectic material is an Sn-containing eutectic material. 24 . The assembly of claim 23 , wherein the eutectic material is Sn—Ag or Au—Sn. 25 . The assembly of claim 22 , wherein the eutectic material is about 96.5 wt. % Sn and about 3.5 wt. % Ag. 26 . The assembly of claim 22 , wherein the eutectic material is about 90 wt. % Au and about 10% Sn. 27 . The assembly of claim 22 , wherein the volume per unit area is less than or equal to about 4 μm. 28 . An assembly, comprising: a substrate; an electronic component; solder connections between the electronic component and the substrate that mechanically and electrically attaches the electrical component to the substrate, at least one of the solder connections having a surface area at the electronic component of less than 300 μm 2 , and a surface area at the substrate of less than 300 μm 2 , a total volume per unit area of less than or equal to about 8 μm and having a first intermetallic zone adjacent to the electronic component, a second intermetallic zone adjacent to the substrate, and a eutectic zone of eutectic material between the first and second intermetallic zones, the eutectic zone occupying greater than or equal to about 35% of the total volume per unit area of the solder connection. 29 . The assembly of claim 28 , wherein the eutectic material is an Sn-containing eutectic material. 30 . The assembly of claim 28 , wherein the volume per unit area is less than or equal to about 4 μm.
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